ST STP20NM60FD, STF20NM60D, STW20NM60FD User Manual
查询STF20NM60D供应商
N-CHANNEL 600V - 0.26Ω - 20A TO-220/TO-220FP/TO-247
FDmesh™ POWER MOSFET (with FAST DIODE)
STP20NM60FD - STF20NM60D
STW20NM60FD
TYPE V
STP20NM60FD
STF20NM60D
STW20NM60FD
n TYPICAL R
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n 100% AVALANCHE TESTED
n LOW INPUT CAPACITANCE AND GATE
600 V
600 V
600 V
(on) = 0.26Ω
DS
DSS
R
DS(on)
< 0.29 Ω
< 0.29 Ω
< 0.29 Ω
I
D
20 A
20 A
20 A
Pw
192 W
45 W
214 W
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The FDmesh™ associates all advan tages of reduced on-resistance and fas t switching with an intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in particular ZVS phase-shift conv ert ers .
APPLICATIONS
n ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS A ND WELDING
EQUIPMENT
TO-220
1
TO-247
3
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP20NM60FD P20NM60FD TO-220 TUBE
STF20NM60D F20NM60D TO-220FP TUBE
STW20NM60FD W20NM60FD TO-247 TUBE
1/11June 2003
STP20NM60FD - STF20NM 60D - STW20NM60FD
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP20NM60FD STF20NM60D STW20NM60FD
V
V
DGR
V
I
I
IDM()
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns
V
T
T
() Pulse width limited by safe operating area
(1) I
SD
(*) Limited only by maximum temperature allowed
Drain-source Voltage (VGS=0)
DS
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 30 V
GS
Drain Current (continuous) at TC= 25°C
D
Drain Current (continuous) at TC= 100°C
D
20 20 (*) 20 A
12.6 12.6 (*) 12.6 A
600 V
600 V
Drain Current (pulsed) 80 80 (*) 80 A
Total Dissipation at TC= 25°C
192 45 214 W
Derating Factor 1.20 0.36 1.42 W/°C
Insulation Withstand Voltage (DC) - 2500 - V
ISO
Operating Junction Temperature
j
Storage Temperature
stg
≤ 20 A, di/dt ≤ 400 A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
–65to150
°C
°C
THERMAL DATA
TO-220 TO-220FP TO-247
Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 0.585 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 30 °C/W
T
Maximum Lead Temperature For Soldering Purpose
l
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25°C,ID=IAR,VDD=35V)
j
max)
j
10 A
700 mJ
2/11
STP20NM60FD - ST F20NM60D - STW20NM60FD
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SP ECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µA, VGS= 0 600 V
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ±30V ±100 µA
GS
V
DS=VGS,ID
= 250µA
345V
1
10
VGS=10V,ID= 10 A 0.26 0.29 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
D(on)xRDS(on)max,
9S
ID= 10A
C
iss
C
oss
C
rss
C
oss eq.
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
=25V,f=1MHz,VGS= 0 1310
V
DS
580
30
VGS=0V,VDS= 0V to 480V 190 pF
Capacitance
R
G
Gate Input Resistance f=1 MHz Gate DC Bias = 0
2.7 Ω
Test Signal Level = 20mV
Open Drain
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=300V,ID= 10A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
=480V,ID= 20A,
V
DD
V
=10V
GS
25
12
37
10
17
52
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 480 V, ID= 20A,
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
Fall Time
Cross-over Time
V
DD
=4.7Ω, VGS= 10V
R
G
(Inductive Load see, Figure 5)
8
22
30
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe o perating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
ISD=20A,VGS=0
I
SD
V
DD
(see test circuit, Figure 5)
= 20 A, di/dt = 100A/µs,
=60V,Tj= 150°C
340
2.8
17
when VDSincreases from 0 to 80%
oss
20
80
1.5 V
ns
ns
ns
A
A
ns
µC
A
3/11
STP20NM60FD - STF20NM 60D - STW20NM60FD
Thermal Impedance For TO-220Safe Operating Area For TO-220
Safe Operating Area For TO-220FP Thermal Imped ance For TO-220FP
4/11
Thermal Impedance For TO-247Safe Operating Area For TO-247
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