ST STP20NM60FD, STF20NM60D, STW20NM60FD User Manual

STF20NM60D

STP20NM60FD - STF20NM60D STW20NM60FD

N-CHANNEL 600V - 0.26Ω - 20A TO-220/TO-220FP/TO-247 FDmesh™ POWER MOSFET (with FAST DIODE)

TYPE	VDSS	RDS(on)	ID	Pw
STP20NM60FD	600 V	< 0.29 Ω	20 A	192 W
STF20NM60D	600 V	< 0.29 Ω	20 A	45 W
STW20NM60FD	600 V	< 0.29 Ω	20 A	214 W

n TYPICAL RDS(on) = 0.26Ω

n HIGH dv/dt AND AVALANCHE CAPABILITIES n 100% AVALANCHE TESTED

nLOW INPUT CAPACITANCE AND GATE CHARGE

n LOW GATE INPUT RESISTANCE

nTIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS

DESCRIPTION

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

APPLICATIONS

nZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT

ORDERING INFORMATION

3

2

	1
TO-220	TO-220FP

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

SALES TYPE	MARKING	PACKAGE	PACKAGING
STP20NM60FD	P20NM60FD	TO-220	TUBE
STF20NM60D	F20NM60D	TO-220FP	TUBE
STW20NM60FD	W20NM60FD	TO-247	TUBE

June 2003

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STP20NM60FD - STF20NM60D - STW20NM60FD

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter		Value		Unit
		STP20NM60FD	STF20NM60D	STW20NM60FD
VDS	Drain-source Voltage (VGS = 0)		600		V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)		600		V
VGS	Gatesource Voltage		± 30		V
ID	Drain Current (continuous) at TC = 25°C	20	20 (*)	20	A
ID	Drain Current (continuous) at TC = 100°C	12.6	12.6 (*)	12.6	A
IDM ( )	Drain Current (pulsed)	80	80 (*)	80	A
PTOT	Total Dissipation at TC = 25°C	192	45	214	W
	Derating Factor	1.20	0.36	1.42	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope		20		V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	-	V
Tj	Operating Junction Temperature		– 65 to 150		°C
Tstg	Storage Temperature				°C

( ) Pulse width limited by safe operating area

(1) ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed

THERMAL DATA

		TO-220		TO-220FP	TO-247
Rthj-case	Thermal Resistance Junction-case Max	0.65		2.8	0.585	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max		62.5		30	°C/W
Tl	Maximum Lead Temperature For Soldering Purpose		300			°C

AVALANCHE CHARACTERISTICS

Symbol	Parameter	Max Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	10	A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy	700	mJ
	(starting Tj = 25 °C, I D = IAR, VDD = 35 V)

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STP20NM60FD - STF20NM60D - STW20NM60FD

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA, VGS = 0	600			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating, TC = 125 °C			10	µA
IGSS	Gate-body Leakage	VGS = ±30V			±100	µA
	Current (VDS = 0)
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250µA	3	4	5	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 10 A		0.26	0.29	Ω
	Resistance

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS > ID(on) x RDS(on)max,		9		S
		ID = 10A
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		1310		pF
Coss	Output Capacitance			580		pF
Crss	Reverse Transfer			30		pF
	Capacitance
Coss eq. (3)	Equivalent Output	VGS = 0V, VDS = 0V to 480V		190		pF
	Capacitance
RG	Gate Input Resistance	f=1 MHz Gate DC Bias = 0		2.7		Ω
		Test Signal Level = 20mV
		Open Drain
SWITCHING ON
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 300V, ID = 10A		25		ns
tr	Rise Time	Ω		12		ns
		RG = 4.7 VGS = 10V
		(Resistive Load see, Figure 3)
Qg	Total Gate Charge	VDD = 480V, ID = 20A,		37	52	nC
Qgs	Gate-Source Charge	VGS = 10V		10		nC
Qgd	Gate-Drain Charge			17		nC
SWITCHING OFF
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
tr(Voff)	Off-voltage Rise Time	VDD = 480 V, ID = 20A,		8		ns
tf	Fall Time	RG = 4.7Ω, VGS = 10V		22		ns
tc	Cross-over Time	(Inductive Load see, Figure 5)		30		ns
SOURCE DRAIN DIODE
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
ISD	Source-drain Current				20	A
ISDM (2)	Source-drain Current (pulsed)				80	A
VSD (1)	Forward On Voltage	ISD = 20 A, VGS = 0			1.5	V
trr	Reverse Recovery Time	ISD = 20 A, di/dt = 100A/µs,		340		ns
Qrr	Reverse Recovery Charge	VDD = 60 V, Tj = 150°C		2.8		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)		17		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2.Pulse width limited by safe operating area.

3.Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

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STP20NM60FD - STF20NM60D - STW20NM60FD

Safe Operating Area For TO-220

Thermal Impedance For TO-220

Safe Operating Area For TO-220FP

Thermal Impedance For TO-220FP

Safe Operating Area For TO-247

Thermal Impedance For TO-247

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