ST STB20NM50, STB20NM50-1, STP20NM50, STP20NM50FP User Manual

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STB20NM50 - STB20NM50-1

STP20NM50 - STP20NM50FP

N-CHANNEL 550V@Tj

- 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK

max

Zener-Protected SuperMESH™ MOSFET

General features

V

Type

STB20NM50

STB20NM50-1

STP20NM50

STP20NM50FP

■ HIGH dv/dt A ND AVALANCHE CAPABILITIES

■ 100% AVALANCHE TESTED

■ LOW INPUT CAPACITANCE AND GATE

DSS(@Tj

max)

550 V 550 V 550 V 550 V

CHARGE

■ LOW GATE INPUT RESISTANCE

Description

R

DS(on)

<0.25 Ω <0.25 Ω <0.25 Ω <0.25 Ω

I

D

20 A 20 A 20 A 20 A

Package

3

2

TO-220

1

D²PAK

3

1

I²PAK

1

TO-220FP

Internal schematic diagram

3

2

1

3

2

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and exellent avalanche characteristics and dynamic performances.

Applications

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization andhiher efficiencies

Order codes

Sales Type Marking Package Packaging

STB20NM50T4 B20NM50 D²PAK TAPE & REEL

STB20NM50-1 B20NM50-1 I²PAK TUBE

STP20NM505 P20NM50 TO-220 TUBE

STP20NM50FP P20NM50FP TO-220FP TUBE

Rev 2

September 2005 1/16

www.st.com

16

1 Electrical ratings STB20NM50-1 - STB20N M50 - STP2 0N M50 - STP20NM50F P

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

TO-220/D²PAK/I²PAK TO-220FP

I

DM

V

GS

I

D

I

D

Note 2

P

TOT

Gate-Source Voltage ± 30 V Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C

20 20 (Note3) A

12.6 12.6 (Note 3) A Drain Current (pulsed) 80 80 (Note3) A Total Dissipation at TC = 25°C

192 45 W

Derating Factor 1.2 0.36 W/°C

dv/dt Note 1 Peak Diode Recovery voltage slope 15 V/ns

V

ISO

T

stg

Insulation Withstand Volatge (DC) -- 2000 V Operating Junction Temperature

j

Storage Temperature

-65 to 150 °C

Table 2. Thermal data

TO-220/D²PAK/I²PAK TO-220FP Unit

Rthj-case Thermal Resistance Junction-case Max 0.65 2.8 °C/W

Rthj-amb Thermal Resist ance Junction-amb Max 62.5 °C/W

T

l

Maximum Lead Temperature For Solder ing Purpose

300 °C

Table 3. Avalanche characteristics

Symbol Parameter Max Valu e Unit

I

AR

E

AS

2/16

Avalanche Curren t, repetitive or Not-Repetitive (pul se width limited by Tj max)

Single Pulse Avalanche Energy (starting Tj=25°C, I

=5A, VDD= 50V)

D

10 A

650 mJ

STB20NM 50-1 - STB20NM50 - ST P20NM50 - STP20NM 50FP 2 Electrical characteristics

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Table 4. On/off states

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current (V

GS

= 0)

Gate Body Leakage Current

= 0)

(V

DS

Gate Threshold Voltage St ati c Drai n-Source On

Resistance

I

= 250µA, VGS= 0

D

= Max Ra ting,

V

DS

V

= Max Rating,Tc = 125°C

DS

= ±30V

V

GS

= VGS, ID = 250 µA

V

DS

V

= 10 V, ID= 10 A

GS

500 V

1

10

±100 µA

345V

0.20 0.25 Ω

Table 5. Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

> I

V

DS

Note 4

g

fs

C C C

C

oss eq.

Note 5

iss

oss

rss

Forward Transconductance

Input Capaci tance Outp u t C a pacita nce Rev er se Trans fer Ca pa citan ce

Equivalent Ouput Capacitance

D(ON) xRDS(ON)max,

ID = 10A

=25V, f=1 MHz, VGS=0

V

DS

=0, V

V

GS

=0V to 400V

DS

10 S

1480

285

34

130 pF

µA µA

pF pF pF

Rg Gate Input Resistance

Q

g

Q

gs

Q

gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

f=1MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain

=400V, ID = 20A

V

DD

=10V

V

GS

(see Figure 15)

1.6 Ω

40 13 19

56 nC

nC nC

3/16

2 Electric al characteristics STB20N M 50-1 - STB20NM50 - ST P20NM 50 - STP20NM 50FP

Table 6. Switching times

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

=250 V, ID=10A,

t

d(on)

Tur n-o n Delay Time

t

r

Rise Time

DD

=4.7Ω, VGS=10V

R

G

(see Figure 16)

24 16

ns ns

t

r(Voff)

t

Off-vol tage Rise Time

t

f

c

Fall Ti me Cross-over T ime

=400 V, ID=20A,

V

DD

=4.7Ω, VGS=10V

R

G

(see Figure 16)

9

8.5 23

Table 7. Source drain diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

Note 2

SDM

V

Note 4

SD

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

(1) ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V (2) Pul s e width limited by safe op erating area (3) Limited only by maximum temperature allowed (4) Pulsed: pulse duration = 300µs, duty cycle 1.5% (5) C

oss eq.

to 80% V

Source-drain Current Source-drain Current (pulsed)

, Tj ≤ T

JMAX

ISD=20A, VGS=0

=20A, di/dt = 100A/µs,

I

SD

V

=100 V, Tj=25°C

DD

=20A, di/dt = 100A/µs,

I

SD

V

=100 V, Tj=150°C

DD

Forward on Voltage Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

(BR)DSS

is defined as a constant equivalent capacitance giving the same charging time as C

DSS

20 80

1.5 V

350

4.6

26

435

5.9

27

when VDS increases from 0

oss

ns ns ns

A A

ns

µC

A

ns

µC

A

4/16

STB20NM 50-1 - STB20NM50 - ST P20NM50 - STP20NM 50FP 2 Electrical characteristics

2.1 Electrical Characteristics (curves)

Figure 1. Safe Ope ra tin g A rea for

TO-220/D²PAK/I²PAK

Figure 3. Safe Operating Area for TO-220FP Figure 4. Th ermal Impedance for TO-220FP

Figure 2. Therm al Impedance for

TO-220/D²PAK/I²PAK

Figure 5. Output Characteristics Figure 6. Transfer Characteristics

5/16