ST STP20NE06, STP20NE06FP User Manual

STP20NE06

				STP20NE06
				STP20NE06FP
N - CHANNEL 60V - 0.06 Ω - 20A				TO-220/TO-220FP
			STripFET	POWER MOSFET
TYPE	VDSS	RDS(on)	ID
STP20NE06	60 V	< 0.080 Ω	20 A
STP20NE06FP	60 V	< 0.080 Ω	13 A

■TYPICAL RDS(on) = 0.06 Ω

■EXCEPTIONAL dv/dt CAPABILITY

■100% AVALANCHE TESTED

■LOW GATE CHARGE 100 oC

■APPLICATION ORIENTED

CHARACTERIZATION	2	3	3
			2
	1		1

DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronics unique º Single Feature Size º strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■SOLENOID AND RELAY DRIVERS

■MOTOR CONTROL, AUDIO AMPLIFIERS

■DC-DC & DC-AC CONVERTERS

■AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

Symbol	Parameter	Value		Un it
		STP20NE06	STP20NE06FP
VDS	Drain-source Voltage (VGS = 0)		60	V
VDGR	Draingate Voltage (RGS = 20 kΩ)		60	V
VGS	Gate-source Voltage		± 20	V
ID	Drain Current (continuous) at Tc = 25 oC	20	13	A
ID	Drain Current (continuous) at Tc = 100 oC	14	9	A
IDM (•)	Drain Current (pulsed)	80	80	A
Ptot	Total Dissipation at Tc = 25 oC	70	30	W
	Derating Factor	0.47	0.2	W/o C
VISO	Insulation Withstand Voltage (DC)		2000	V
dv/dt	Peak Diode Recovery voltage slope		7	V/ns
Ts tg	Storage Temperature	-65 to 175		o C
Tj	Max. Operating Junction Temperature		175	o C
(•) Pulse width limited by safe operating area		( 1) ISD ≤ 20 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

June 1999

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STP20NE06/FP

THERMAL DATA

					TO-220	TO-220FP
Rthj -case	Thermal Resistance Junction-case			Max	2.14	5	oC/W
Rthj -amb	Thermal	Resistance	Junction-ambient	Max	62.5		oC/W
Rthc-sink	Thermal	Resistance	Case-sink	Typ	0.5		oC/W
Tl	Maximum Lead Temperature For Soldering Purpose				300		oC

AVALANCHE CHARACTERISTICS

Symbo l

IAR

EAS

Parameter	Max Value	Unit
Avalanche Current, Repetitive or Not-Repetitive	20	A
(pulse width limited by Tj max)
Single Pulse Avalanche Energy	100	mJ
(starting Tj = 25 oC, ID = IAR, VDD = 25V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

Symbo l	Parameter	Test Con ditions		Min.	Typ. Max.	Unit
V(BR)DSS	Drain-source	ID = 250 μA VGS = 0		60		V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating	Tc = 125 oC		1	μA
	Drain Current (VGS = 0)	VDS = Max Rating			10	μA
IGSS	Gate-body Leakage	VGS = ± 20 V			± 100	nA
	Current (VDS = 0)

ON ( )

Symbo l	Parameter	Test Con ditions		Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS	ID = 250 μA	2	3	4	V
RDS(on)	Static Drain-source On	VGS = 10 V	ID = 10 A		0.060	0.080	Ω
	Resistance
ID(o n)	On State Drain Current	VDS > ID(o n) x RDS(on )ma x		20			A
		VGS = 10 V

DYNAMIC

Symbo l	Parameter	Test Con ditions		Min.	Typ. Max.	Unit
gf s ( ) Forward		VDS > ID(o n) x RDS(on )ma x	ID =10 A	5	9	S
	Transconductance
Ciss	Input Capacitance	VDS = 25 V f = 1 MHz	VGS = 0		900	pF
Cos s	Output Capacitance				125	pF
Crss	Reverse Transfer				35	pF
	Capacitance

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STP20NE06/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbo l	Parameter	Test Con ditions		Min. Typ. Max. Unit
td(on)	Turn-on Delay Time	VDD = 30 V	ID = 10 A	20		ns
tr	Rise Time	RG =4.7 Ω	VGS = 10 V	45		ns
		(see test circuit, figure 3)
Qg	Total Gate Charge	VDD = 48 V	ID = 20 A VGS = 10 V	25	35	nC
Qgs	Gate-Source Charge			10		nC
Qgd	Gate-Drain Charge			6		nC

SWITCHING OFF

Symbo l	Parameter	Test Con ditions		Min. Typ. Max.	Unit
tr (Voff)	Off-voltage Rise Time	VDD = 48 V	ID = 20 A	8	ns
tf	Fall Time	RG =4.7 Ω	VGS = 10 V	25	ns
tc	Cross-over Time	(see test circuit, figure 5)		37	ns

SOURCE DRAIN DIODE

Symbo l	Parameter	Test Con ditions		Min.	Typ. Max.	Unit
ISD	Source-drain Current				20	A
ISDM (•)	Source-drain Current				80	A
	(pulsed)
VSD ( )	Forward On Voltage	ISD = 20 A	VGS = 0		1.5	V
trr	Reverse Recovery	ISD = 20 A	di/dt = 100 A/μs		50	ns
	Time	VDD = 30 V	Tj = 150 oC
Qrr	Reverse Recovery	(see test circuit, figure 5)			115	nC
	Charge
IRRM	Reverse Recovery				4.5	A
	Current

( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

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