ST STP20N10L, STP20N10LFI User Manual

STP20N10L

STP20N10L

STP20N10LFI

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

TYPE	VDSS	R DS ( on)	ID
STP20N10L	100 V	< 0.12 Ω	20 A
STP20N10LFI	100 V	< 0.12 Ω	12 A

■TYPICAL RDS(on) = 0.09 Ω

■AVALANCHE RUGGED TECHNOLOGY

■100% AVALANCHE TESTED

■REPETITIVE AVALANCHE DATA AT 100oC

■LOW GATE CHARGE

■HIGH CURRENT CAPABILITY

■175oC OPERATING TEMPERATURE

■LOGIC LEVEL COMPATIBLE INPUT

■APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■SOLENOID AND RELAY DRIVERS

■REGULATORS

■DC-DC & DC-AC CONVERTERS

■MOTOR CONTROL, AUDIO AMPLIFIERS

■AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

3	3
2	2
1	1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter		Value	Unit
		STP20N10L	STP20N10LFI
VD S	Drain-source Voltage (VGS = 0)		100	V
VDG R	Draingate Voltage (RGS = 20 kΩ)		100	V
VGS	Gate-source Voltage		± 15	V
ID	Drain Current (continuous) at Tc = 25 oC	20	12	A
ID	Drain Current (continuous) at Tc = 100 oC	14	8	A
ID M(•)	Drain Current (pulsed)	80	80	A
Ptot	Total Dissipation at Tc = 25 oC	105	40	W
	Derating Factor	0.7	0.27	W/oC
VISO	Insulation Withstand Voltage (DC)		2000	V
Tstg	Storage Temperature	-65 to 175		oC
Tj	Max. Operating Junction Temperature		175	oC

(•) Pulse width limited by safe operating area

November 1996

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STP20N10L/FI

THERMAL DATA

					TO-220	ISOWATT220
Rthj-cas e	Thermal Resistance Junction-case			Max	1.43	3.75	oC/W
Rthjamb	Thermal	Resistance	Junction-ambient	Max		62.5	oC/W
Rt hcsin k	Thermal	Resistance	Case-sink	Typ		0.5	oC/W
Tl	Maximum Lead Temperature For Soldering Purpose					300	oC

AVALANCHE CHARACTERISTICS

Symbol

IA R

EAS

EAR

IA R

Parameter	Max Value	Unit
Avalanche Current, Repetitive or Not-Repetitive	20	A
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy	120	mJ
(starting Tj = 25 oC, ID = IAR, VD D = 25 V)
Repetitive Avalanche Energy	30	mJ
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive	14	A
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

Symbol	Parameter	Test Conditions	Min.	Typ. Max.	Unit
V( BR)DSS	Drain-source	ID = 250 μA VG S = 0	100		V
	Breakdown Voltage
IDS S	Zero Gate Voltage	VDS = Max Rating		1	μA
	Drain Current (VGS = 0)	VDS = Max Rating x 0.8 Tc = 125 oC		10	μA
IG SS	Gate-body Leakage	VGS = ± 15 V		± 100	nA
	Current (VD S = 0)

ON ( )

Symbol

VG S(th)

RDS( on)

ID( on)

Parameter		Test Conditions	Min.	Typ.	Max.	Unit
Gate Threshold Voltage	VDS = VGS	ID = 250 μA	1	1.6	2.5	V
Static Drain-source On	VGS = 5 V	ID = 10 A		0.09	0.12	Ω
Resistance
On State Drain Current	VDS > ID( on) x RD S(on) max		20			A
	VGS = 10 V

DYNAMIC

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
gfs ( )	Forward	VDS > ID( on) x RD S(on) max	ID = 10 A	10	16		S
	Transconductance
Ciss	Input Capacitance	VDS = 25 V f = 1 MHz	VG S = 0		1200	1500	pF
Coss	Output Capacitance				250	350	pF
Crss	Reverse Transfer				60	90	pF
	Capacitance

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STP20N10L/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol	Parameter	Test Conditions		Min. Typ. Max. Unit
td(on)	Turn-on Time	VDD = 30 V	ID = 10 A	50	70	ns
tr	Rise Time	RG = 50 Ω	VGS = 5 V	140	200	ns
		(see test circuit, figure 3)
(di/dt)on	Turn-on Current Slope	VDD = 80 V	ID = 20 A	140		A/μs
		RG = 50 Ω	VGS = 5 V
		(see test circuit, figure 5)
Qg	Total Gate Charge	VDD = 80 V	ID = 20 A VGS = 5 V	22	30	nC
Qgs	Gate-Source Charge			6		nC
Qgd	Gate-Drain Charge			12		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
tr(Vof f)	Off-voltage Rise Time	VDD = 80 V	ID = 20 A		80	110	ns
tf	Fall Time	RG = 50 Ω	VGS = 5 V		80	110	ns
tc	Cross-over Time	(see test circuit, figure 5)			160	220	ns

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ. Max.	Unit
IS D	Source-drain Current				20	A
ISDM(•)	Source-drain Current				80	A
	(pulsed)
VS D ( )	Forward On Voltage	ISD = 20 A	VG S = 0		1.5	V
trr	Reverse Recovery	ISD = 20 A	di/dt = 100 A/μs		130	ns
	Time	VDD = 50 V	Tj = 150 oC			μC
Qrr	Reverse Recovery	(see test circuit, figure 5)			0.4
	Charge
IRRM	Reverse Recovery				6	A
	Current

( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220

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