ST STP20N06, STP20N06FI User Manual

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STP20N06

STP20N06FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

STP 20N06 STP 20N06FI

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

o

■ 175

■ APPLICATION ORIENTED

C OPERATING TEMPERATURE

DS(on)

DSS

60 V 60 V

= 0.06 Ω

R

DS(on)

< 0.085 Ω < 0.085 Ω

I

D

20 A 13 A

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

3

2

1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

STP 20N06 STP2 0N06FI

V

I

DM

P

V

T

(•) Pulsewidth limited bysafe operating area

December 1996

Drain - s ource Voltage (VGS=0) 60 V

DS

Drain- gate Voltage (RGS=20kΩ)60V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC2013A

I

D

Drain Current (continuous) at Tc=100oC14 9A

I

D

(•) Drain Current (pulsed) 80 80 A

Total Di ssipation at Tc=25oC8035W

tot

Derat ing Factor 0.53 0.23 W/ Ins ulation Withs t and Voltage (DC)  2000 V

ISO

St or a ge Tem perature -65 to 175

stg

Max. Operating Junction Temperature 175

T

j

o o

o

C

C C

1/10

STP20N06/FI

THERMAL DATA

TO-220 ISOW ATT 220

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

I

AR

Thermal Resistance Junction - cas e M ax 1.88 4.29 Thermal Resistance Junction- ambient Max

Thermal Resistance Case-sink Typ Maximum Lead T emperature For Soldering Purpose

l

Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive (pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng T Repetitive Avalanc he Energ y

AR

=25oC, ID=IAR,VDD=25V)

j

(pulse width limited by Tjmax, δ <1%) Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive

(Tc= 100oC, pulse width limited by Tjmax, δ <1%)

62.5

0.5

300

20 A

80 mJ

20 mJ

14 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS=0 60 V

Break d own Volta ge

I

DSS

I

GSS

Zer o Gate Volt age Drain Current (VGS=0)

Gat e- body Leak age Current (V

DS

=0)

VDS=MaxRating VDS= Max Rating x 0 .8 Tc=125oC

= ± 20 V ± 100 nA

V

GS

10

1

ON (∗)

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA22.94V St at ic Drain-s our ce O n

VGS=10V ID= 10 A 0.06 0.085 Ω

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

20 A

VGS=10V

DYNAMIC

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C C C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=10A 6 9 S

VDS=25V f=1MHz VGS=0 520

250

80

700 350 120

µA µA

pF pF pF

2/10

STP20N06/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q Q Q

Turn-on T im e

t

Rise Time

r

Turn-on C urrent S lope VDD=40V ID=20A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=30V ID=3A RG=50 Ω VGS=10V

45 65

(see test circuit, figure 3)

240 A/µs RG=50 Ω VGS=10V (see test circuit, figure 5)

VDD=40V ID=20A VGS=10V 22

11

7

VDD=40V ID=20A RG=50 Ω VGS=10V (see test circuit, figure 5)

80 60

140

65 95

30 nC

120

90

210

ns ns

nC nC

ns ns ns

Symbol Parameter Test Co ndition s Mi n. Ty p. Max. Unit

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

20 80

(pulsed)

V

(∗) Forward On Volt age ISD=20A VGS=0 1.6 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD= 20 A di/dt = 100 A/µs VDD=15V Tj=150oC (see test circuit, figure 5)

85

0.13

Charge

I

RRM

Reverse Recovery

3

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 % (•) Pulse widthlimited by safeoperating area

Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220

A A

ns

µC

A

3/10