ST STP200NF04, STB200NF04, STB200NF04-1 User Manual

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N-CHANNEL 40V - 120 A - 3.3 mΩ TO-220/D²PAK/I²PAK

STP200NF04

STB200NF04 - STB200NF04-1

STripFET™II MOSFET

Table 1: Ge neral Features

Type V

STB200NF04
STB200NF04-1
STP200NF04

■ STANDARD THRESHOLD DRIVE

■ 100% AVALANCHE TESTED

DSS

40 V
40 V
40 V

R

DS(on)

< 0.0037 Ω
< 0.0037 Ω
< 0.0037 Ω

I

D

120 A
120 A
120 A

Pw

310 W
310 W
310 W

DESCRIPTION

This MOSFET is th e latest developm ent of STM i­croelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high pac king density for low on­resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark­able manufacturing reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SWI TCHIN G SPEED

■ AUTOMOTIVE

Figure 1: Package

3

2

1

1

D2PAK

TO-220

3

2

1

I2PAK

Figure 2: Internal Schematic Diagram

3

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STB200NF04T4 B200NF04

STB200NF04-1 B200NF04

STP200NF04 P200NF04 TO-220 TUBE

D

2

I

2

PAK

PAK

TAPE & REEL

TUBE

Rev. 3

1/15October 2004

STP200NF04 - STB200NF04 - STB200NF04-1

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

(#) Drain Current (continuos) at TC = 25°C

D

ID (#) Drain Current (continuos) at TC = 100°C

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 1.5 V/ns

E

AS

T

j

T

stg

() Pulse wi dt h l i m i ted by safe operating area

≤120A, di/dt ≤500A/µs, VDD ≤ V

(1) I

SD

(2) Starting Tj = 25°C, Id = 60A, VDD=30 V
(#) Current Limited by Package

Table 4: Thermal Data

Rthj-case Thermal Resistance Junction-case Max 0.48 °C/W

Rthj-pcb Thermal Resistance Junction-pcb Max (see Figure 17) °C/W

Rthj-amb Thermal Resistance Junction-ambient (Free air) Max 62.5 °C/W

T

l

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

40 V
40 V

Gate- source Voltage ± 20 V

120 A
120 A

()

Drain Current (pulsed) 480 A
Total Dissipation at TC = 25°C

310 W

Derating Factor 2.07 W/°C

(2)

Single Pulse Avalanche Energy 1.3 J
Operating Junction Temperature

Storage Temperature

, Tj ≤ T

(BR)DSS

JMAX.

Maximum Lead Temperature For Soldering Purpose

-55 to 175 °C

2

TO-220 / I

PAK / D2PAK

300 °C

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 5: On/Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

GS

= 0)

Gate-body Leaka ge
Current (V

DS

= 0)
Gate Threshold Voltage
Static Drain-source On

Resistance

ID = 250 µA, VGS = 0 40 V

V

= Max Rating

DS

= Max Rating, TC = 125 °C

V

DS

V

= ± 20V ±100 nA

GS

V

= VGS, ID = 250µA

DS

24V

1

10

VGS = 10V, ID = 90 A 3.3 3.7 mΩ

µA
µA

2/15

STP200NF04 - STB200NF04 - STB200NF04-1

ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS = 15 V, ID= 90 A 150 S

g

fs

C

iss

C

oss

C

rss

Table 7: Switching On/Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

= 25V, f = 1 MHz, VGS = 0 5100

V

DS

= 20 V, ID = 90 A

V

DD

R

=4.7Ω VGS = 10 V

G

(see Figure 20)

= 20V, ID = 120 A,

V

DD

V

= 10V

GS

(see Figure 23)

1600

600

30
320
140
120

170

30

62

210

pF
pF
pF

ns
ns
ns
ns

nC
nC
nC

Table 8: Source Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD (1)

t

rr

Q

rr

I

RRM

(1) Pulsed: Pulse duratio n = 300 µs, duty cycl e 1.5 %.
(2) Pulse wi dt h l i m i ted by safe operat i ng area.

(2)

Source-drain Current
Source-drain Current (pulsed)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

ISD = 120 A, VGS = 0

= 120 A, di/dt = 100A/µs

I

SD

V

= 30V, Tj = 150°C

DD

(see Figure 21)

85
190

4.5

120
480

1.3 V

A
A

ns
nC

A

3/15

STP200NF04 - STB200NF04 - STB200NF04-1

Figure 3: Safe Operating Area

Figure 4: Output Characteristics

Figure 6: Thermal Impedance

Figure 7: Transfer Characteristics

Figure 5: Transconductance

4/15

Figure 8: Static Drain-source On Resistance

STP200NF04 - STB200NF04 - STB200NF04-1

Figure 9: Gate Charge vs Gate-source Voltag e

Figure 10: Normalized Gate Thereshold Volt­age vs Temperature

Figure 12: Capacitance Variations

Figure 13: Normal ized On R esistance vs Tem­perature

Figure 11: Dource -Drain Diode Forward Ch ar­acteristics

Figure 14: Normalized Breakdown Voltage vs
Temperature

5/15