ST STP19NB20, STP19NB20FP, STB19NB20-1 User Manual

STB19NB20-1

STP19NB20 - STP19NB20FP STB19NB20-1

N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH™ MOSFET

TYPE	VDSS	RDS(on)	ID
STP19NB20	200 V	< 0.18 Ω	19 A
STP19NB20FP	200 V	< 0.18 Ω	10 A
STB19NB20-1	200 V	< 0.18 Ω	19 A

■TYPICAL RDS(on) = 0.15 Ω

■EXTREMELY HIGH dv/dt CAPABILITY

■100% AVALANCHE TESTED

■NEW HIGH VOLTAGE BENCHMARK

■GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■SWITH MODE POWER SUPPLIES (SMPS)

■DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

3

	2
TO-220	1
	TO-220FP

1 2 3

I2PAK (Tabless TO-220)

INTERNAL SCHEMATIC DIAGRAM

Symbol	Parameter		Value			Unit
			STP(B)19NB20(-1)		STP19NB20FP
VDS	Drain-source Voltage (VGS = 0)		200			V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)		200			V
VGS	Gatesource Voltage		± 30			V
ID	Drain Current (continuous) at TC = 25°C		19		10	A
ID	Drain Current (continuous) at TC = 100°C		12		6.0	A
IDM (l)	Drain Current (pulsed)		76		76	A
PTOT	Total Dissipation at TC = 25°C		125		35	W
	Derating Factor		1		0.28	W/°C
dv/dt (1)	Peak Diode Recovery voltage slope		5.5			V/ns
VISO	Insulation Withstand Voltage (DC)		-		2500	V
Tstg	Storage Temperature		–65 to 150			°C
Tj	Max. Operating Junction Temperature		150			°C
(•)Pulse width limited by safe operating area		(1)ISD ≤19	A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX			1/12
August 2002

STP19NB20/FP/STB19NB20-1

THERMAL DATA

		TO-220/I2PAK		TO-220FP
Rthj-case	Thermal Resistance Junction-case Max	1		3.57	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max		62.5		°C/W
Tl	Maximum Lead Temperature For Soldering Purpose		300		°C

AVALANCHE CHARACTERISTICS

Symbol	Parameter	Max Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	19	A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy	580	mJ
	(starting Tj = 25 °C, I D = IAR, VDD = 50 V)

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA, VGS = 0	200			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating, TC = 125 °C			10	µA
IGSS	Gate-body Leakage	VGS = ±30V			±100	nA
	Current (VDS = 0)

ON (1)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250µA	3	4	5	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 9.5 A		0.15	0.18	Ω
	Resistance

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS > ID(on) x RDS(on)max,	3			S
		ID = 9.5 A
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		1000		pF
Coss	Output Capacitance			285		pF
Crss	Reverse Transfer			45		pF
	Capacitance

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STP19NB20/FP/STB19NB20-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 100V, ID = 9.5 A		15		ns
tr	Rise Time	RG = 4.7Ω VGS = 10V		15		ns
		(see test circuit, Figure 3)
Qg	Total Gate Charge	VDD = 160V, ID = 19 A,		29	40	nC
Qgs	Gate-Source Charge	VGS = 10V		9.5		nC
Qgd	Gate-Drain Charge			13		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
tr(Voff)	Off-voltage Rise Time	VDD = 160V, ID = 19 A,		10		ns
tf	Fall Time	RG = 4.7Ω, VGS = 10V		10		ns
		(see test circuit, Figure 5)
tc	Cross-over Time			20		ns

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD	Source-drain Current					19	A
ISDM (2)	Source-drain Current (pulsed)					76	A
VSD (1)	Forward On Voltage	ISD = 19	A, VGS = 0			1.5	V
trr	Reverse Recovery Time	ISD = 19	A, di/dt = 100A/µs,		210		ns
Qrr	Reverse Recovery Charge	VDD = 50V, Tj = 150°C			1.5		μC
		(see test circuit, Figure 5)
IRRM	Reverse Recovery Current				14.5		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.

Safe Operating Area for TO-220/I2PAK Safe Operating Area for TO-220FP

3/12

STP19NB20/FP/STB19NB20-1

Thermal Impedance for TO-220/I2PAK

Thermal Impedance for TO-220FP

Output Characteristics

Tranconductance

Tranfer Characteristics

Static Drain-Source On Resistance

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