ST STP19N06L, STP19N06LFI User Manual
STP19N06L
STP19N06L
STP19N06LFI
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
TYPE |
VDSS |
RDS( on) |
ID |
STP19N06L |
60 V |
< 0.1 W |
19 A |
STP19N06LFI |
60 V |
< 0.1 W |
13 A |
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■TYPICAL RDS(on) = 0.085 Ω
■AVALANCHE RUGGED TECHNOLOGY
■100% AVALANCHE TESTED
■REPETITIVE AVALANCHE DATA AT 100oC
■LOW GATE CHARGE
■LOGIC LEVEL COMPATIBLE INPUT
■175 oC OPERATING TEMPERATURE
■APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■SOLENOID AND RELAY DRIVERS
■REGULATORS
■DC-DC & DC-AC CONVERTERS
■MOTOR CONTROL, AUDIO AMPLIFIERS
■AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3 |
3 |
2 |
2 |
1 |
1 |
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
|
Value |
Unit |
|
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|
STP19N06L |
|
STP19N06LFI |
|
|
|
|
|
|
|
VDS |
Drain-source Voltage (VGS = 0) |
|
60 |
V |
|
VDGR |
Draingate Voltage (RGS = 20 kW) |
|
60 |
V |
|
VGS |
Gate-source Voltage |
|
± 15 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 oC |
19 |
|
13 |
A |
ID |
Drain Current (continuous) at Tc = 100 oC |
13 |
|
9 |
A |
IDM(·) |
Drain Current (pulsed) |
76 |
|
76 |
A |
Ptot |
Total Dissipation at Tc = 25 oC |
80 |
|
35 |
W |
|
Derating Factor |
0.53 |
|
0.23 |
W/oC |
VISO |
Insulation Withstand Voltage (DC) |
¾ |
|
2000 |
V |
|
|
|
|
|
|
Tstg |
Storage Temperature |
-65 to 175 |
oC |
||
Tj |
Max. Operating Junction Temperature |
|
175 |
oC |
|
(∙) Pulse width limited by safe operating area
February 1995 |
1/7 |
|
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STP19N06L/FI
THERMAL DATA
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|
TO-220 |
|
ISOWATT220 |
|
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||
Rthj-case |
Thermal Resistance Junction-case |
Max |
1.88 |
|
4.29 |
oC/W |
||
Rthj-amb |
Thermal |
Resistance |
Junction-ambient |
Max |
|
62.5 |
oC/W |
|
Rthc-sink |
Thermal |
Resistance |
Case-sink |
Typ |
|
0.5 |
oC/W |
|
Tl |
Maximum Lead Temperature For Soldering Purpose |
|
300 |
oC |
||||
AVALANCHE CHARACTERISTICS
Symbol |
Parameter |
Max Value |
Unit |
|
|
|
|
IAR |
Avalanche Current, Repetitive or Not-Repetitive |
19 |
A |
|
(pulse width limited by Tj max, δ < 1%) |
|
|
EAS |
Single Pulse Avalanche Energy |
76 |
mJ |
|
(starting Tj = 25 oC, ID = IAR, VDD = 25 V) |
|
|
EAR |
Repetitive Avalanche Energy |
19 |
mJ |
|
(pulse width limited by Tj max, δ < 1%) |
|
|
IAR |
Avalanche Current, Repetitive or Not-Repetitive |
13 |
A |
|
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%) |
|
|
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
V(BR)DSS |
Drain-source |
ID = 250 μA VGS = 0 |
60 |
|
|
V |
|
Breakdown Voltage |
|
|
|
|
|
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|
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|
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IDSS |
Zero Gate Voltage |
VDS = Max Rating |
|
|
250 |
μA |
|
Drain Current (VGS = 0) |
VDS = Max Rating x 0.8 Tc = 125 oC |
|
|
1000 |
μA |
IGSS |
Gate-body Leakage |
VGS = ± 15 V |
|
|
± 100 |
nA |
|
Current (VDS = 0) |
|
|
|
|
|
ON ( )
Symbol |
Parameter |
|
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
VGS(th) |
Gate Threshold Voltage |
VDS = VGS |
ID = 250 μA |
1 |
1.7 |
2.5 |
V |
RDS(on) |
Static Drain-source On |
VGS = 5 V |
ID = 9.5 A |
|
0.085 |
0.1 |
Ω |
|
Resistance |
VGS = 5 V |
ID = 9.5 A Tc = 100oC |
|
|
0.2 |
Ω |
ID(on) |
On State Drain Current |
VDS > ID(on) x RDS(on)max |
19 |
|
|
A |
|
|
|
VGS = 10 V |
|
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DYNAMIC
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
gfs ( ) |
Forward |
VDS > ID(on) x RDS(on)max |
ID = 9.5 A |
7 |
9 |
|
S |
|
Transconductance |
|
|
|
|
|
|
Ciss |
Input Capacitance |
VDS = 25 V f = 1 MHz |
VGS = 0 |
|
700 |
900 |
pF |
Coss |
Output Capacitance |
|
|
|
230 |
300 |
pF |
Crss |
Reverse Transfer |
|
|
|
80 |
100 |
pF |
|
Capacitance |
|
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2/7
STP19N06L/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
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|
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|
td(on) |
Turn-on Time |
VDD = 30 V |
ID = 9.5 A |
|
15 |
21 |
ns |
tr |
Rise Time |
RG = 4.7 Ω |
VGS = 5 V |
|
165 |
230 |
ns |
|
|
(see test circuit, figure 3) |
|
|
|
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|
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|
|
(di/dt)on |
Turn-on Current Slope |
VDD = 40 V |
ID = 19 A |
|
70 |
|
A/μs |
|
|
RG = 47 Ω |
VGS = 5 V |
|
|
|
|
|
|
(see test circuit, figure 5) |
|
|
|
|
|
Qg |
Total Gate Charge |
VDD = 40 V |
ID = 19 A VGS = 5 V |
|
18 |
26 |
nC |
Qgs |
Gate-Source Charge |
|
|
|
7 |
|
nC |
Qgd |
Gate-Drain Charge |
|
|
|
9 |
|
nC |
|
|
|
|
|
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|
SWITCHING OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
tr(Voff) |
Off-voltage Rise Time |
VDD = 40 V |
ID = 19 A |
|
50 |
70 |
ns |
tf |
Fall Time |
RG = 47 Ω |
VGS = 5 V |
|
95 |
135 |
ns |
tc |
Cross-over Time |
(see test circuit, figure 5) |
|
165 |
230 |
ns |
|
SOURCE DRAIN DIODE
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. Max. |
Unit |
|
ISD |
Source-drain Current |
|
|
|
19 |
A |
ISDM(∙) |
Source-drain Current |
|
|
|
76 |
A |
|
(pulsed) |
|
|
|
|
|
|
|
|
|
|
|
|
VSD ( ) |
Forward On Voltage |
ISD = 19 A |
VGS = 0 |
|
1.6 |
V |
trr |
Reverse Recovery |
ISD = 19 A |
di/dt = 100 A/μs |
|
60 |
ns |
|
Time |
VDD = 30 V |
Tj = 150 oC |
|
|
μC |
Qrr |
Reverse Recovery |
(see test circuit, figure 5) |
|
0.13 |
||
|
Charge |
|
|
|
|
|
IRRM |
Reverse Recovery |
|
|
|
4.6 |
A |
|
Current |
|
|
|
|
|
( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % (∙) Pulse width limited by safe operating area
3/7
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