ST STP16NS25, STP16NS25FP User Manual
STP16NS25
STP16NS25
STP16NS25FP
N-CHANNEL 250V - 0.23Ω - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET
TYPE |
VDSS |
RDS(on) |
ID |
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STP16NS25 |
250 V |
< 0.28 Ω |
16 A |
STP16NS25FP |
250 V |
< 0.28 Ω |
16 A |
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■TYPICAL RDS(on) = 0.23 Ω
■EXTREMELY HIGH dv/dt CAPABILITY
■100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■SWITH MODE POWER SUPPLIES (SMPS)
■DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT
■IDEAL FOR MONITOR’s B+ FUNCTION
ABSOLUTE MAXIMUM RATINGS
3 |
3 |
2 |
2 |
1 |
1 |
TO-220 |
TO-220FP |
INTERNAL SCHEMATIC DIAGRAM
Symbol |
Parameter |
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Value |
Unit |
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STP16NS25 |
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STP16NS25FP |
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VDS |
Drain-source Voltage (VGS = 0) |
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250 |
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V |
VDGR |
Drain-gate Voltage (RGS = 20 kΩ) |
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250 |
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V |
VGS |
Gatesource Voltage |
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± 20 |
V |
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ID |
Drain Current (continuos) at TC = 25°C |
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16 |
|
16(*) |
A |
ID |
Drain Current (continuos) at TC = 100°C |
|
11 |
|
11(*) |
A |
IDM (l) |
Drain Current (pulsed) |
|
64 |
|
64(*) |
A |
PTOT |
Total Dissipation at TC = 25°C |
|
140 |
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40 |
W |
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Derating Factor |
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1 |
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0.33 |
W/°C |
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dv/dt (1) |
Peak Diode Recovery voltage slope |
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5 |
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V/ns |
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VISO |
Insulation Withstand Voltage (DC) |
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- |
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2500 |
V |
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Tstg |
Storage Temperature |
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–65 to 150 |
°C |
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Tj |
Max. Operating Junction Temperature |
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(•)Pulse width limited by safe operating area |
(1) ISD≤ 16A, di/dt≤300 A/μs, VDD≤ V(BR)DSS, Tj≤TjMAX |
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(*) Limited only by maximum temperature allowed |
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May 2002 |
1/9 |
STP16NS25 - STP16NS25FP
THERMAL DATA
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TO-220 |
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TO-220FP |
°C/W |
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Rthj-case |
Thermal Resistance Junction-case Max |
0.9 |
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3 |
°C/W |
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Rthj-amb |
Thermal Resistance Junction-ambient Max |
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62.5 |
°C/W |
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Tl |
Maximum Lead Temperature For Soldering Purpose |
|
300 |
°C |
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AVALANCHE CHARACTERISTICS
Symbol |
Parameter |
Max Value |
Unit |
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IAR |
Avalanche Current, Repetitive or Not-Repetitive |
16 |
A |
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(pulse width limited by Tj max) |
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EAS |
Single Pulse Avalanche Energy |
600 |
mJ |
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(starting Tj = 25 °C, I D = IAR, VDD = 50 V) |
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ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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V(BR)DSS |
Drain-source |
ID = 250 µA, VGS = 0 |
250 |
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V |
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Breakdown Voltage |
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IDSS |
Zero Gate Voltage |
VDS = Max Rating |
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1 |
µA |
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Drain Current (VGS = 0) |
VDS = Max Rating, TC = 125 °C |
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10 |
µA |
IGSS |
Gate-body Leakage |
VGS = ± 20 V |
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±100 |
nA |
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Current (VDS = 0) |
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ON (1)
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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VGS(th) |
Gate Threshold Voltage |
VDS = VGS, ID = 250µA |
2 |
3 |
4 |
V |
RDS(on) |
Static Drain-source On |
VGS = 10V, ID = 8 A |
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0.23 |
0.28 |
Ω |
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Resistance |
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DYNAMIC
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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gfs (1) |
Forward Transconductance |
VDS > ID(on) x RDS(on)max, |
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15 |
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S |
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ID = 8 A |
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Ciss |
Input Capacitance |
VDS = 25V, f = 1 MHz, VGS = 0 |
|
1270 |
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pF |
Coss |
Output Capacitance |
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190 |
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pF |
Crss |
Reverse Transfer |
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74 |
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pF |
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Capacitance |
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2/9
STP16NS25 - STP16NS25FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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td(on) |
Turn-on Delay Time |
VDD = 125 V, ID = 8 A |
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14.5 |
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ns |
tr |
Rise Time |
RG = 4.7Ω VGS = 10 V |
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26 |
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ns |
(see test circuit, Figure 3) |
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Qg |
Total Gate Charge |
VDD = 200V, ID = 16 A, |
|
59 |
83 |
nC |
Qgs |
Gate-Source Charge |
VGS = 10V |
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7.9 |
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nC |
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Qgd |
Gate-Drain Charge |
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22.3 |
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nC |
SWITCHING OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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td(Voff) |
Turn-off- Delay Time |
VDD = 125V, ID = 8 A, |
|
72 |
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ns |
tf |
Fall Time |
RG = 4.7Ω, VGS = 10V |
|
32 |
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ns |
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(see test circuit, Figure 3) |
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tr(Voff) |
Off-voltage Rise Time |
Vclamp = 200V, ID = 16 A, |
|
24 |
|
ns |
tf |
Fall Time |
RG = 4.7Ω, VGS = 10V |
|
28 |
|
ns |
tc |
Cross-over Time |
(see test circuit, Figure 5) |
|
56 |
|
ns |
SOURCE DRAIN DIODE
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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ISD |
Source-drain Current |
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16 |
A |
ISDM (2) |
Source-drain Current (pulsed) |
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|
64 |
A |
VSD (1) |
Forward On Voltage |
ISD = 16 A, VGS = 0 |
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|
1.5 |
V |
trr |
Reverse Recovery Time |
ISD = 16 A, di/dt = 100A/µs |
|
270 |
|
ns |
Qrr |
Reverse Recovery Charge |
VDD = 30V, Tj = 150°C |
|
1.5 |
|
μC |
(see test circuit, Figure 5) |
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IRRM |
Reverse Recovery Current |
|
11.4 |
|
A |
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Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. |
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2. Pulse width limited by safe operating area. |
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Safe Operating Area for TO-220 |
Safe Operating Area for TO-220FP |
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3/9 |
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