STB16NK65Z-S
STP16NK65Z STB16NK65Z-S
N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2SPAK Zener - Protected SuperMESH™ MOSFET
Table 1: General Features |
Figure 1: Package |
TYPE |
VDSS |
RDS(on) |
ID |
Pw |
|
|
|
|
|
STP16NK65Z |
650 V |
< 0.50 Ω |
13 A |
190 W |
STB16NK65Z-S |
650 V |
< 0.50 Ω |
13 A |
190 W |
■TYPICAL RDS(on) = 0.38Ω
■EXTREMELY HIGH dv/dt CAPABILITY
■100% AVALANCHE TESTED
■GATE CHARGE MINIMIZED
■VERY LOW INTRINSIC CAPACITANCES
■VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■IDEAL FOR OFF-LINE POWER SUPPLIES
Table 2: Order Codes
1 2 3
3
2
1
I²SPAK
TO-220
Figure 2: Internal Schematic Diagram
SALES TYPE |
MARKING |
PACKAGE |
PACKAGING |
|
|
|
|
STP16NK65Z |
P16NK65Z |
TO-220 |
TUBE |
|
|
|
|
STB16NK65Z-S |
B16NK65Z |
I²SPAK |
TUBE |
|
|
|
|
Rev. 3
September 2005 |
1/12 |
STP16NK65Z - STB16NK65Z-S
Table 3: Absolute Maximum ratings
Symbol |
Parameter |
Value |
Unit |
|
|
|
|
|
|
VDS |
Drain-source Voltage (VGS = 0) |
650 |
V |
|
VDGR |
Drain-gate Voltage (RGS = 20 kΩ ) |
650 |
V |
|
VGS |
Gatesource Voltage |
± 30 |
V |
|
ID |
Drain Current (continuous) at TC = 25°C |
13 |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
8.19 |
A |
|
IDM (*) |
Drain Current (pulsed) |
52 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
190 |
W |
|
|
Derating Factor |
1.51 |
W/°C |
|
|
|
|
|
|
VESD(G-S) |
Gate source EDS (HBM-C=100pF, R=1.5kΩ) |
6000 |
V |
|
|
|
|
|
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
|
|
|
|
|
|
Tj |
Operating Junction Temperature |
-55 to 150 |
°C |
|
Tstg |
Storage Temperature |
|||
|
|
(*) Pulse width limited by safe operating area
(1) ISD ≤ 13 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
Table 4: Thermal Data
Rthj-case |
Thermal Resistance Junction-case Max |
0.66 |
°C/W |
|
|
|
|
Rthj-amb |
Thermal Resistance Junction-ambient Max |
62.5 |
°C/W |
|
|
|
|
Tl |
Maximum Lead Temperature For Soldering Purpose |
300 |
°C |
Table 5: Avalanche Characteristics
Symbol |
Parameter |
Max. Value |
Unit |
|
|
|
|
IAR |
Avalanche Current, Repetitive or Not-Repetitive |
13 |
A |
|
(pulse width limited by Tj max) |
|
|
EAS |
Single Pulse Avalanche Energy |
350 |
mJ |
|
(starting Tj = 25 °C, ID = IAR, VDD = 50 V) |
|
|
Table 6: Gate-Source Zener Diode
Symbol |
Parameter |
Test Condition |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
BVGSO |
Gate-Source Breakdown |
Igs=± 1mA (Open Drain) |
30 |
|
|
V |
|
Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fromgate to source. In this respect the Zener voltage ia appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
2/12
STP16NK65Z - STB16NK65Z-S
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
V(BR)DSS |
Drain-source |
ID = 1 mA, VGS = 0 |
650 |
|
|
V |
|
Breakdown Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
IDSS |
Zero Gate Voltage |
VDS = Max Rating |
|
|
1 |
µA |
|
Drain Current (VGS = 0) |
VDS = Max Rating, TC = 125 °C |
|
|
50 |
µA |
IGSS |
Gate-body Leakage |
VGS = ± 20 V |
|
|
±10 |
µA |
|
Current (VDS = 0) |
|
|
|
|
|
VGS(th) |
Gate Threshold Voltage |
VDS = VGS, ID = 100 µA |
3 |
3.75 |
4.5 |
V |
RDS(on) |
Static Drain-source On |
VGS = 10V, ID = 6.5 A |
|
0.38 |
0.50 |
Ω |
|
Resistance |
|
|
|
|
|
|
|
|
|
|
|
|
Table 8: Dynamic
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
gfs (1) |
Forward Transconductance |
VDS = 15 V, ID = 6.5 A |
|
12 |
|
S |
Ciss |
Input Capacitance |
VDS = 25 V, f = 1 MHz, VGS = 0 |
|
2750 |
|
pF |
Coss |
Output Capacitance |
|
|
275 |
|
pF |
Crss |
Reverse Transfer |
|
|
60 |
|
pF |
|
Capacitance |
|
|
|
|
|
|
|
|
|
|
|
|
Coss eq. (*) |
Equivalent Output |
VGS = 0V, VDS = 6.5 V to 520 V |
|
188 |
|
pF |
|
Capacitance |
|
|
|
|
|
|
|
|
|
|
|
|
td(on) |
Turn-on Delay Time |
VDD = 325 V, ID = 6.5 A |
|
25 |
|
ns |
tr |
Rise Time |
RG = 4.7Ω VGS = 10 V |
|
25 |
|
ns |
td(off) |
Turn-off Delay Time |
(see Figure 17) |
|
68 |
|
ns |
tf |
Fall Time |
|
|
17 |
|
ns |
Qg |
Total Gate Charge |
VDD = 520 V, ID = 13 A, |
|
89 |
|
nC |
Qgs |
Gate-Source Charge |
VGS = 10 V |
|
18 |
|
nC |
Qgd |
Gate-Drain Charge |
(see Figure 20) |
|
45 |
|
nC |
Table 9: Source Drain Diode
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
ISD |
Source-drain Current |
|
|
|
|
13 |
A |
ISDM (2) |
Source-drain Current (pulsed) |
|
|
|
|
52 |
A |
VSD (1) |
Forward On Voltage |
ISD = 13 |
A, VGS = 0 |
|
|
1.6 |
V |
trr |
Reverse Recovery Time |
ISD = 13 |
A, di/dt = 100 A/µs, |
|
500 |
|
ns |
Qrr |
Reverse Recovery Charge |
VDD = 100 V, Tj = 25°C |
|
5.2 |
|
µC |
|
IRRM |
Reverse Recovery Current |
(see Figure 18) |
|
21 |
|
A |
|
|
|
|
|
|
|
|
|
trr |
Reverse Recovery Time |
ISD = 13 |
A, di/dt = 100 A/µs, |
|
615 |
|
ns |
Qrr |
Reverse Recovery Charge |
VDD = 100 V, Tj = 150°C |
|
7 |
|
µC |
|
IRRM |
Reverse Recovery Current |
(see Figure 18) |
|
22.5 |
|
A |
(1)Pulsed: Pulse duration = 300µs, duty cycle 1.5%
(2)Pulse width limited by safe operating area
(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
3/12
STP16NK65Z - STB16NK65Z-S
Figure 3: Safe Operating Area |
Figure 6: Thermal Impedance |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Figure 4: Output Characteristics |
Figure 7: Transfer Characteristics |
||
|
|
|
|
|
|
|
|
Figure 5: Transconductance |
Figure 8: Static Drain-source On Resistance |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
4/12