ST STF724, STN724 User Manual

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查询STF724供应商

Features

■ SURFACE MOUNTING DEVICES IN MEDIUM

POWER SOT-223 AND SOT-89 PACKAGE

■ AVAILABLE IN TAPE & REEL PACKING

■ IN COMPLIANCE WITH THE 2002/93/EC

EUROPEAN DIRECTIVE

Applications

STF724

STN724

NPN MEDIUM POWER TRANSISTORS

2

■ VOLTAGE REGULATION

■ RELAY DRIVER

■ GENERIC SWITCH

Description

The STF724 and STN724 are PNP transistors manufactured using planar Technology resulting in rugged high performance devices.

Internal Schematic Diagram

SOT-223

Order codes

Part Number Marking Package Packing

SOT-89

STF724 724 SOT-89 Tape & reel STN724 N724 SOT-223 Tape & reel

Rev 1

October 2005 1/10

www.st.com

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1 Absolute Maximum Ratings STF724 - STN724

1 Absolute Maximum Ratings

Table 1. Absolute Maximum Rating

Symbol Parameter Value Unit

STF724 STN724

V V V

P T

CBO CEO EBO

I

CM

I

BM TOT

STG

T

Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IC = 0) Collector Current 3 A

C

Collector Peak Current (tP < 5ms) Base Current 1 A

B

Base Peak Current (tP < 5ms) Total di ssipation at Tc = 25°C

60 V 30 V

5V

6A

2A

1.4 1.6 W Storage Temperature -65 to 150 Max. Operating Junction Temperature 150

J

Table 2. Thermal Data

Symbol Parameter Value Unit

SOT-89 SOT-223

R

thj-amb

Note: 1

Note: 1 Device mounted on a PCB area of 1 cm

Thermal Resista nce Junction-Amb ____________________Max 89 78 °C/W

2

.

°C

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STF724 - STN724 2 Electrical Char acteristics

2 Electrical Characteristics

Table 3. Electrical Characteristics (T

= 25°C; unless otherwise specified)

CASE

Symbol Parameter T est Conditions Min. T yp. Max. Unit

I

CES

I

CEO

I

EBO

V

(BR)CBO

V

(BR)CEO

Note 2

V

(BR)EBO

V

CE(sat)

Note 2

V

BE(sat)

Note 2

h

Collector Cut-off Current

= 0)

(V

BE

Collector Cut-off Current

= 0)

(I

B

Emitter Cut-off Current

= 0)

(I

C

Collector-Base Breakdown Voltage (I

Collector-Emit ter Breakdown Voltage (I

= 0)

B

Collector-Emit ter Breakdown Voltage (I

= 0)

C

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

FE

f

Transistor Frequency

T

= 0)

E

= 60V

V

CE

= 30V

V

CE

= 5V

V

EB

= 100μA

I

C

= 10 mA

I

C

= 100 μA

I

E

I

= 1 A IB = 50 mA

C

I

= 2 A IB = 100 mA

C

I

= 3 A IB = 150 mA

C

= 2 A IB = 100 mA

I

C

I

= 100 mA V

C

I

= 1 A V

C

= 3 A V

I

C

V

= 10 V Ic= 0.1 A

CE

CE CE CE

= 2 V = 2 V = 2 V

10 μA

100 μA

10 μA

60 V

30 V

5V

0.4

0.7

1.1

1.2 V

100

80

300

30

100 MHz

2 Pulsed duration = 300 μs, duty cycle ≤1.5%.

V V V

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