The STM690/704/795/802/804/805/806 supervisor asserts a reset signal to the MCU
whenever V
the push-button reset input (MR
high for STM804/805) for 0 V < V
battery, RST
goes below the reset threshold (V
CC
RST
) is taken low. RST is guaranteed to be a logic low (logic
CC
< V
RST
if V
BAT
is guaranteed valid down to VCC = 1 V.
), a watchdog time-out occurs, or when
is greater than 1 V. Without a backup
During power-up, once V
the reset time-out period, t
If V
drops below the reset threshold, RST goes low. Each time RST is asserted, it stays
CC
low for at least the reset time-out period (t
the internal timer clears. The reset timer starts when V
exceeds the reset threshold an internal timer keeps RST low for
CC
. After this interval RST returns high.
rec
). Any time VCC goes below the reset threshold
rec
returns above the reset threshold.
CC
2.2 Push-button reset input (STM704/806)
A logic low on MR asserts reset. Reset remains asserted while MR is low, and for t
Figure 36) after it returns high. The MR
input has an internal 40 kΩ pull-up resistor, allowing
it to be left open if not used. This input can be driven with TTL/CMOS-logic levels or with
open-drain/ collector outputs. Connect a normally open momentary switch from MR
to create a manual reset function; external debounce circuitry is not required. If MR
from long cables or the device is used in a noisy environment, connect a 0.1µF capacitor
from MR
to GND to provide additional noise immunity. MR may float, or be tied to VCC when
not used.
2.3 Watchdog input (NOT available on STM704/795/806)
The watchdog timer can be used to detect an out-of-control MCU. If the MCU does not
toggle the watchdog input (WDI) within t
watchdog timer is cleared by either:
1.a reset pulse, or
2. by toggling WDI (high-to-low or low-to-high), which can detect pulses as short as 50 ns.
If WDI is tied high or low, a reset pulse is triggered every 1.8 s (t
The timer remains cleared and does not count for as long as reset is asserted. As soon as
reset is released, the timer starts counting (see Figure 37).
(1.6 s typ), the reset is asserted. The internal
WD
+ t
WD
rec
).
(see
rec
to GND
is driven
Note:Input frequency greater than 20 ns (50 MHz) will be filtered.
In the event of a power failure, it may be necessary to preserve the contents of external
SRAM through V
automatically switch the SRAM to the backup supply when V
Note:When the battery is first connected without V
immediately provide battery backup voltage on V
switchover operate as described below. This mode allows a battery to be attached during
manufacturing but not used until after the system has been activated for the first time. As a
result, no battery power is consumed by the device during storage and shipment. If the
backup battery is not used, connect both V
This family of supervisors does not always connect V
V
. V
CC
V
BAT
connects to V
BAT
(whichever is lower). This is done to allow the backup battery (e.g., a 3.6 V lithium cell)
to have a higher voltage than V
Assuming that V
before V
gets too close to the 2.0 V minimum required to reliably retain data in most
OUT
external SRAMs. When V
point. V
is connected to VCC through a 3 Ω PMOS power switch.
OUT
Note:The backup battery may be removed while V
decoupled (0.1 µF typ), without danger of triggering a reset.
Table 4.I/O status in battery backup
. With a backup battery installed with voltage V
OUT
power applied, the device does not
CC
BAT
(through a 100 Ω switch) when VCC is below VSW (2.4 V) or
OUT
.
CC
> 2.0 V, switchover at VSO ensures that battery backup mode is entered
BAT
recovers, hysteresis is used to avoid oscillation around the VSO
Internal gating of the chip enable (E) signal prevents erroneous data from corrupting the
external CMOS RAM in the event of an undervoltage condition. The STM795 uses a series
transmission gate from E
asserted), the E
transmission gate is enabled and passes all E transitions. When reset is
to E
(see Figure 11). During normal operation (reset not
CON
asserted, this path becomes disabled, preventing erroneous data from corrupting the CMOS
RAM. The short E
most µPs. If E
propagation delay from E to E
is low when reset asserts, E
enables the STM795 to be used with
CON
remains low for typically 10 µs to permit the
CON
current write cycle to complete.
2.6 Chip enable input (STM795 only)
The chip enable transmission gate is disabled and E is high impedance (disabled mode)
while reset is asserted. During a power-down sequence when V
threshold, the chip enable transmission gate disables and E
impedance if the voltage at E
is high. If E is low when reset asserts, the chip enable
transmission gate will disable 10 µs after reset asserts (see Figure 12). This permits the
current write cycle to complete during power-down.
passes the reset
CC
immediately becomes high
Any time a reset is generated, the chip enable transmission gate remains disabled and E
remains high impedance (regardless of E
period (t
/2). When the chip enable transmission gate is enabled, the impedance of E
rec
activity) for the first half of the reset time-out
appears as a 40 Ω resistor in series with the load at E
the chip enable transmission gate depends on V
connected to E
tested from the 50% point on E
, and the loading on E
to the 50% point on E
. The chip enable propagation delay is production
CON
CC
load capacitance (see Figure 35). For minimum propagation delay, minimize the capacitive
load at E
and use a low-output impedance driver.
CON
2.7 Chip enable output (STM795 only)
When the chip enable transmission gate is enabled, the impedance of E
a 40 Ω resistor in series with the source driving E
gate is off and an active pull-up connects E
off when the transmission gate is enabled.
2.8 Power-fail input/output (NOT available on STM795)
The Power-Fail Input (PFI) is compared to an internal reference voltage (independent from
the V
Output (PFO
signal a failing power supply. Typically PFI is connected through an external voltage divider
(see Figure 10) to either the unregulated DC input (if it is available) or the regulated output
of the V
below V
804/805/806 or the microprocessor drops below the minimum operating voltage.
comparator). If PFI is less than the power-fail threshold (V
RST
), the Power-Fail
PFI
) will go low. This function is intended for use as an undervoltage detector to
regulator. The voltage divider can be set up such that the voltage at PFI falls
CC
several milliseconds before the regulated VCC input to the STM690/704/795/802/
PFI
AI08855c
During battery backup, the power-fail comparator is turned off and PFO
low (see Figure 13). This occurs after V
drops below VSW (2.4 V). When power returns,
CC
the power-fail comparator is enabled and PFO
should be connected to V
and PFO left unconnected. PFO may be connected to MR on
SS
the STM704/806 so that a low voltage on PFI will generate a reset output.
2.9 Applications information
These supervisor circuits are not short-circuit protected. Shorting V
excluding power-up transients such as charging a decoupling capacitor - destroys the
device. Decouple both V
the device as possible.
CC
and V
pins to ground by placing 0.1 µF capacitors as close to
SuperCaps™ are capacitors with extremely high capacitance values (e.g., order of 0.47 F)
for their size. Figure 14 shows how to use a SuperCap as a backup power source. The
SuperCap may be connected through a diode to the V
V
while VCC is above the reset threshold, there are no special precautions when using
CC
these supervisors with a Super-Cap.
Figure 14. Using a SuperCap™
5 V
supply. Since V
CC
can exceed
BAT
V
CC
STMXXX
V
BAT
GND
2.11 Negative-going VCC transients
The STM690/704/795/802/804/805/806 supervisors are relatively immune to negative-going
V
transients (glitches). Figure 32 was generated using a negative pulse applied to VCC,
CC
starting at V
(comparator overdrive). The graph indicates the maximum pulse width a negative V
transient can have without causing a reset pulse. As the magnitude of the transient
increases (further below the threshold), the maximum allowable pulse width decreases. Any
combination of duration and overdrive which lies under the curve will NOT generate a reset
signal. Typically, a V
or less will not cause a reset pulse. A 0.1 µF bypass capacitor mounted as close as possible
to the V
CC
+ 0.3 V and ending below the reset threshold by the magnitude indicated
RST
transient that goes 100 mV below the reset threshold and lasts 40 µs
Maximum ratingsSTM690, STM704, STM795, STM802, STM804, STM805, STM806
4 Maximum ratings
Stressing the device above the rating listed in the absolute maximum ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 5.Absolute maximum ratings
Symbol Parameter Value Unit
T
STG
(1)
T
SLD
V
Input or output voltage –0.3 to VCC +0.3 V
IO
V
CC/VBAT
I
Output current 20 mA
O
P
D
1. Reflow at peak temperature of 260 °C. The time above 255 °C must not exceed 30 seconds.
Storage temperature (VCC off) –55 to 150 °C
Lead solder temperature for 10 seconds 260 °C
Supply voltage –0.3 to 6.0 V
Power dissipation 320 mW
30/42Doc ID 10519 Rev 9
STM690, STM704, STM795, STM802, STM804, STM805, STM806DC and AC parameters
5 DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived tests performed under the measurement conditions summarized in
Ta bl e 6 . Designers should check that the operating conditions in their circuit match the
operating conditions when relying on the quoted parameters.
Table 6.Operating and AC measurement conditions
Parameter
V
CC/VBAT
Ambient operating temperature (T
supply voltage 1.0 to 5.5 V
) –40 to 85 °C
A
Input rise and fall times ≤
STM690/704/795/
802/804/805/806
5
5ns
Input pulse voltages 0.2 to 0.8 V
Input and output timing ref. voltages 0.3 to 0.7 V
Figure 34. E to E
propagation delay test circuit
CON
V
BAT
3.6 V
25
equivalent
source impedance
STM690/704/
795/802/804/
V
CC
V
CC
805/806
GND
E
CON
50
50
E
cable
50
Unit
V
CC
V
CC
50 pF C
(1)
L
1. CL includes load capacitance and scope probe capacitance.
Figure 35. AC testing input/output waveforms
0.8 V
CC
0.2 V
CC
Doc ID 10519 Rev 931/42
0.7 V
0.3 V
AI08854
CC
CC
AI02568
DC and AC parametersSTM690, STM704, STM795, STM802, STM804, STM805, STM806
Figure 36. MR timing waveform
MR
t
MLRL
(1)
RST
t
MLMH
1. RST for STM805.
Figure 37. Watchdog timing
V
CC
t
RST
WDI
Alter-
native
Operating voltage T
V
CC
Table 7.DC and AC characteristics
Sym
,
V
CC
(2)
V
BAT
ICC
V
CC
backup mode
I
BAT
(4)
V
BAT
backup mode
rec
Description Test condition
supply current
supply current in battery
supply current in battery
t
rec
= –40 to +85 °C 1.1
A
Excluding I
Excluding I
Excluding I
= 2.0 V, MR = VCC)
V
CC
Excluding I
OUT
t
WD
(1)
(VCC < 5.5 V) 40 60 µA
OUT
(VCC < 3.6 V) 35 50 µA
OUT
(V
OUT
= 2.3 V,
BAT
(V
= 3.6 V) 0.4 1.0 µA
BAT
Min Typ Max Unit
(3)
5.5 V
25 35 µA
AI07837a
AI07891
= 5 mA
I
OUT1
V
V
OUT1
V
V
OUT2
voltage (active)
OUT
voltage (battery backup)
OUT
to V
V
CC
on-resistance 3 4 Ω
OUT
I
I
= 75 mA
OUT1
= 250 µA, VCC > 2.5 V
OUT1
I
= 250 µA, V
OUT2
I
= 1 mA, V
OUT2
32/42Doc ID 10519 Rev 9
(5)
BAT
= 2.3 V
BAT
= 2.3 V
(5)
V
0.03
V
V
0.0015
V
BAT
CC
CC
0.3
CC
0.1
–
–
–
–
VCC –
0.015
VCC –
0.15
VCC –
0.0006
V
–
BAT
0.034
V
–
BAT
0.14
V
V
V
V
V
STM690, STM704, STM795, STM802, STM804, STM805, STM806DC and AC parameters
Table 7.DC and AC characteristics (continued)
Sym
I
LI
I
LO
V
IH
V
IL
V
OL
V
OL
V
OH
V
OHB
Alter-
native
Description Test condition
to V
V
BAT
Input leakage current (MR)
on-resistance 100 Ω
OUT
STM704/806 only;
MR = 0 V, VCC = 3 V
Input leakage current (PFI)0 V < V
Input leakage current (WDI)0 V < V
Output leakage current
Input high voltage (MR, WDI)V
Input low voltage (MR, WDI)V
Output low voltage (PFO,
, RST, Vccsw)
RST
Output low voltage (E
CON
)
STM804/805/795;
0 V < V
(max) < VCC < 5.5 V0.7 VCC V
RST
(max) < VCC < 5.5 V0.3 V
RST
V
= V
CC
= 3.2 mA
I
SINK
VCC = V
= 1.6 mA, E = 0 V
I
OUT
IOL = 40 µA,
= 1.0 V, V
V
CC
Output low voltage (RST)
Output high voltage (RST,
(7)
RST)
Output high voltage (E
Output high voltage (PFO
CON
)
VOH battery backup (Vccsw,
RST)
battery backup (E
V
OH
CON
)
)
TA = 0 °C to 85 °C
= 200 µA,
I
OL
= 1.2 V, V
V
CC
I
SOURCE
= V
V
CC
= V
V
CC
I
= 1.6 mA, E = VCC
OUT
I
SOURCE
V
= V
CC
I
SOURCE
V
= 0 V, V
CC
I
SOURCE
VCC = 0 V, V
< V
IN
CC
< V
IN
CC
< V
IN
CC
(max),
RST
(max),
RST
= VCC,
BAT
= V
BAT
= 1 mA,
(max)
RST
(max),
RST
= 75 µA,
(max)
RST
= 100 µA,
= 2.8 V
BAT
= 75 µA,
= 2.8 V
BAT
(1)
(6)
CC
Min Typ Max Unit
2075350µA
–202+25nA
–1+1µA
–1+1µA
V
CC
0.3V
0.2 V
CC
V
0.3V
0.3V
2.4V
0.8 V
0.8 V
0.8 V
0.8 V
V
CC
V
CC
V
BAT
V
BAT
Power-fail comparator (NOT available on STM795)
STM802/
V
PFI
PFI input threshold
PFI falling
(V
< 3.6 V)
CC
804/806
STM690/
704/805
PFI hysteresis PFI rising (V
PFI to PFO propagation delay 2 µs
t
PFD
< 3.6 V) 10 20 mV
CC
1.212 1.237 1.262 V
1.187 1.237 1.287 V
Doc ID 10519 Rev 933/42
DC and AC parametersSTM690, STM704, STM795, STM802, STM804, STM805, STM806
Table 7.DC and AC characteristics (continued)
Sym
ISC
Alter-
native
Description Test condition
PFO
output short to GND
current
= 3.6 V, PFO = 0 V 0.1 0.75 2.0 mA
V
CC
(1)
Min Typ Max Unit
Battery switchover
> VSW V
V
VSO
Battery backup switchover
(8)(9)
voltage
V
SW
Power-down
Power-up
V
V
V
BAT
BAT
BAT
BAT
< V
> V
< V
SW
SW
SW
SW
V
V
BAT
V
SW
V
V
BAT
2.4 V
Hysteresis 40 mV
Reset thresholds
falling 3.00 3.075 3.15 V
V
STM690T/
704T/795T/ 805T
STM802T/
804T/806T
STM690S/
704S/795S/ 805S
(10)
V
Reset threshold
RST
STM802S/
804S/806S
STM690R/
704R/795R/ 805R
STM802R/
804R/806R
RST pulse width VCC < 3.6 V 140 200 280 ms
t
rec
CC
rising 3.00 3.085 3.17 V
V
CC
V
falling 3.00 3.075 3.12 V
CC
rising 3.00 3.085 3.14 V
V
CC
V
falling 2.85 2.925 3.00 V
CC
rising 2.85 2.935 3.02 V
V
CC
falling 2.88 2.925 3.00 V
V
CC
rising 2.88 2.935 3.02 V
V
CC
V
falling 2.55 2.625 2.70 V
CC
rising 2.55 2.635 2.72 V
V
CC
V
falling 2.59 2.625 2.70 V
CC
rising 2.59 2.635 2.72 V
V
CC
V
V
Push-button reset input (STM704/806)
t
MLMH tMR
t
MLRL tMRD
MR pulse width 100 20 ns
MR to RST output delay 60 500 ns
Watchdog timer (NOT available on STM704/795/806)
t
WD
Watchdog timeout period V
WDI pulse width V
(max) < VCC < 3.6 V 1.12 1.60 2.24 s
RST
(max) < VCC < 3.6 V 100 20 ns
RST
Chip enable gating (STM795 only)
E to E
resistanceVCC = V
CON
RST
34/42Doc ID 10519 Rev 9
(max) 46 Ω
STM690, STM704, STM795, STM802, STM804, STM805, STM806DC and AC parameters
Table 7.DC and AC characteristics (continued)
Sym
E
ISC E
1. Valid for ambient operating temperature: TA = –40 to 85 °C; VCC = V
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
36/42Doc ID 10519 Rev 9
STM690, STM704, STM795, STM802, STM804, STM805, STM806Package mechanical data
Figure 38. SO8 – 8-lead plastic small outline, 150 mils body width,
package mechanical drawing
A2
A
C
B
e
ddd
D
8
E
H
1
Table 8.SO8 - 8-lead plastic small outline, 150 mils body width,
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