ST STM1645-30 User Manual

STM1645-30

	STM1645-30
	RF POWER MODULE
	SATELLITE COMMUNICATION APPLICATIONS

■CLASS C SATELLITE COMMUNICATIONS AMPLIFIER

■16251665 MHz

■12/28 VOLTS

■INPUT/OUTPUT 50 OHMS

■Pout = 30 W MIN.

■GAIN = 34.8 dB MIN.

DESCRIPTION

The STM1645-30 hybrid RF Power Module is designed for high power satellite communication applications in the 1.6 GHz frequency range.

High fT, gold metallized silicon microwave power devices, optimized for use in STM1645-30, are employed to provide high gain and efficiency while ensuring excellent reliability.

ORDER CODE :	BRANDING:
STM1645-30	STM1645-30

PIN CONNECTIONS

1. RF Input	2. Ground	3.	VC1 12V 4. VC2 28V
5. VC3 28V	6. Ground	7.	RF Output

ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)

Symb ol	Parameter	Value	Un it
V	DC Supply Voltage	30	Vdc
PI N	RF Input Power (POUT ≤ 30 W)	20	mW
TSTG	Storage Temperature Range	- 40 to + 100	o C
TC	Operating Case Temperature	-35 to + 70	o C

October 1999

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STM1645-30

ELECTRICAL SPECIFICATION (Tcase = 25 oC, VC1* = 12 V; VC2, VC3 = 28 V)

Symbo l	Parameter
BW	Frequency Range
POUT	Power Output
GP	Power Gain
η	Efficiency
ZIN	Input Impedance
H	Harmonics
	POUT vs TCASE
	POUT vs Frequency
	Load Mismatch
	POUT Control Range
	Stability

Note :

*VC1 = 12 V regulated ±1%

**POUT adjusted by varying VC3

T est Con ditio ns		Min. T yp. Max Unit
		1625		1665	MHz
PIN ≤ 10 W		30	35	40	W
POUT = 30 W		34.8	35.5		dB
POUT = 30 W		35			%
POUT = 30 W	ZG, ZL = 50 Ω		1.5:1	2:1	VSWR
POUT = 30 W	reference		-45	-40	dB
TC = -35oC to +70 oC @ PI N = 10mW				2	dB
f = 1625 - 1665 MHz				1	dB
VSWR = 10:1	V = 28 Vdc	No Degradation in Output
POUT = 30 W			Power
POUT = 30 W		8	10		dB

POUT = 5 to 30 W**	All Spurious Outputs More
Load VSWR = 3:1 any phase	Than 60 dB Below Carrier
	REF. 1015506I

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