ST STL8NH3LL User Manual
STL8NH3LL
N-CHANNEL 30 V - 0.012 Ω - 8 A PowerFLAT™
ULTRA LOW GATE CHARGE STripFET™ MOSFET
PRELIMINARY DATA
Table 1: Ge neral Features
TYPE V
STL8NH3LL 30 V < 0.015 Ω 8 A
■ TYPICAL R
■ IMPROVED DIE-TO-FOOTPRINT RATIO
■ VERY LOW PROFILE PACKAGE (1mm MAX)
■ VERY LOW THERMAL RESISTANCE
■ VERY LOW GATE CHARGE
■ LOW THRESHOLD DEVICE
DS
DSS
(on) = 0.012 Ω @ 10V
R
DS(on)
ID (1)
DESCRIPTION
This application specific MOSFET is the lastest
generation of STMicroelectronics unique
“STripFET™” technology. The resulting transistor
is optimized for low on-resistance and minimal
gate charge. The Chip-scaled PowerFLAT™ package allows a significant b oard space saving, still
boosting the performance.
APPLICATIONS
■ CONTROL FET IN BUCK CONVERTER
Figure 1: Package
PowerFLAT™(3.3x3.3)
(Chip Scale Package)
Figure 2: Internal Schematic Diagram
TOP VIEW
Table 2: Order Codes
Part Number Marking Package Packaging
STL8NH3LL L8NH3LL PowerFLAT™ (3.3x3.3) TAPE & REEL
Rev 2
October 2004
This is prel i m i nary information on a new product fores een to be developed. Detai l s are subject to change wit hout notice
1/7
STL8NH3LL
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
(1) Drain Current (continuous) at TC= 25°C (Steady State)
I
D
ID (2) Drain Current (continuous) at TC= 100°C (Steady State)
I
DM
P
TOT
P
TOT
T
stg
T
Drain-source Voltage (VGS= 0)
Drain-gate Voltage (RGS= 20 kΩ)
Gate- source Voltage ± 16 V
(3)
Drain Current (pulsed) 32 A
(1) Total Dissipation at TC= 25°C
(2) Total Dissipation at TC= 25°C (Steady State)
Derating Factor (2) 0.4 W/°C
Storage Temperature
Max. Operating Junction Temperature
j
30 V
30 V
8A
5A
50 W
1.56 W
– 55 to 150 °C
Table 4: Thermal Data
Rthj-Case Thermal Resistance Junction-Case Max 2.5 °C/W
Rthj-a (4) Thermal Operating Junction-ambient 80 °C/W
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: On /Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source Breakdown
ID = 250 µA, VGS = 0 30 V
Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= Max Rating
DS
V
= Max Rating, TC = 125°C
DS
V
= ± 16 V ± 100 nA
GS
V
= VGS, ID = 250 µA 1 V
DS
= 10 V, ID = 4 A
V
GS
VGS = 4.5 V, ID = 4 A
0.012
0.0135
1
10
0.015
0.017
Table 6: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(5) Forward Transconductance VDS = 15V, ID= 4A TBD S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 285 pF
Reverse Transfer
Capacitance
V
= 25V, f= 1 MHz, VGS= 0
DS
965 pF
38 pF
µA
µA
Ω
Ω
2/7
STL8NH3LL
ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Switching On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 32 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Table 8: Switching
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
Table 9: Source Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (5)
t
rr
Q
rr
I
RRM
(1) The val ue is rated acco rding R
(2) The val ue is rated acco rding R
(3) Pulse width limited by safe operating area.
(4) When m ounted on minimum footprint
(5) Pulsed: Pulse duration = 300 µ s, duty cycle 1.5 %
Source-drain Current
(3)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
thj-c
thj-a
= 15 V, ID= 4 A
DD
R
=4.7Ω, VGS = 4.5V
G
(see Figure 3)
= 15V, ID= 8 A, VGS= 4.5 V
V
DD
(see Figure 5)
VDD= 15 V, ID= 4 A,
=4.7Ω, VGS= 4.5 V
R
G
(see Figure 3)
ISD = 8 A, VGS = 0
= 8 A, di/dt = 100 A/µs
I
SD
VDD = 20V, Tj = 150°C
(see Figure 4)
15 ns
9
12 nC
3.7
3
18
8.5
8
32
1.3 V
24
17.4
1.45
nC
nC
ns
ns
A
A
ns
nC
A
3/7
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