ST STGW20NC60VD User Manual
1/11July 2004
STGW20NC60VD
N-CHANNEL 30A - 600V TO-247
Very Fast PowerMESH™ IGBT
Table 1: Ge neral Features
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOSSES INCLUDE DIODE RECOVERY
ENERGY
■ HIGH CURRENT CAPABILITY
■ HIGH FREQUENCY OPERATION UP TO 50
KHz
■ VERY SOFT ULTRA FAST RECOVERY
ANTIPARALLEL DIODE
■ LOWER C
RES
/C
IES
RATIO
■ NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH
™
IGBTs, with outstanding performances.
The suffix “V” identifies a family optimized for high
frequency applications.
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
■ UPS
■ MOTOR DRIVERS
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE V
CES
V
CE(sat)
(Max)
@25°C
I
C
@100°C
STGW20NC60VD 600 V < 2.5 V 30 A
1
2
3
TO-247
Weight: 4.41gr ± 0.01
Max Clip Pressure: 150 N/mm
2
SALES TYPE MARKING PACKAGE PACKAGING
STGW20NC60VD GW20NC60VD TO-247 TUBE
Rev. 4
查询STGW20NC60VD供应商
STGW20NC60VD
2/11
Table 3: Absolute Maximum ratings
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Table 6: On
(#) Calculated according to the iterative formula:
Symbol Parameter Value Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Reverse Battery Protection 20
V
V
GE
Gate-Emitter Voltage ± 20
V
I
C
Collector Current (continuous) at 25°C (#) 60
A
I
C
Collector Current (continuous) at 100°C (#) 30
A
I
CM
(1)
Collector Current (pulsed) 100 A
I
f
Diode RMS Forward Current at T
C
= 25°C
30 A
P
TOT
Total Dissipation at T
C
= 25°C
200
W
Derating Factor 1.6 W/°C
T
stg
Storage Temperature
– 55 to 150 °C
T
j
Operating Junction Temperature
Min. Typ. Max.
Rthj-case Thermal Resistance Junction-case (IGBT) -- -- 0.625 °C/W
Rthj-case Thermal Resistance Junction-case (Diode) -- -- 1.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient -- -- 50 °C/W
T
L
Maximum Lead Temperature for Soldering
Purpose (1.6 mm from case, for 10 sec.)
300 °C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
C
= 1 mA, V
GE
= 0 600 V
I
CES
Collector-Em itter Leak age
Current (V
CE
= 0)
V
GE
= Max Rating
Tc=25°C
Tc=125°C
10
1
µA
mA
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= ± 20 V , V
CE
= 0 ± 100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
Gate Threshold Voltage V
CE
= V
GE
, I
C
= 250 µA 3.75 5.75 V
V
CE(SAT)
Collector-Em itter Satur ation
Voltage
V
GE
= 15 V, I
C
= 20A, Tj= 25°C
V
GE
= 15 V, I
C
= 20A,
Tj= 125°C
1.8
1.7
2.5 V
V
I
C
T
C
()
T
JMAX
T
C
–
R
THJ C–
V
CESAT MAX()
T
C
I
C
,()×
--------------------------------------------------------------------------------------------------
=
3/11
STGW20NC60VD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is us ed as external di ode. IGBTs & DIO DE are at the same temperatur e (25°C and 125°C)
Table 9: Switching Off
(3)Turn-off losses include also the tail of the collector current.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1)
Forward Transconductance
V
CE
= 15 V
,
I
C
= 20 A 15 S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0 2200
225
50
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 390 V, I
C
= 20 A,
V
GE
= 15V,
(see Figure 21)
100
16
45
140 nC
nC
nC
I
CL
Turn-Off SOA Minimum
Current
V
clamp
= 480 V , Tj = 150°C
R
G
= 10 Ω, V
GE
= 15V
100 A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
(di/dt)
on
Eon
(2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 390 V, I
C
= 20 A
R
G
=3.3Ω, V
GE
= 15V, Tj= 25°C
(see Figure 19)
31
11
1600
220 300
ns
ns
A/µs
µJ
t
d(on)
t
r
(di/dt)
on
Eon
(2)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 390 V, I
C
= 20 A
R
G
=3.3Ω, V
GE
= 15V, Tj=
125°C
(see Figure 19)
31
11.5
1500
450
ns
ns
A/µs
µJ
Symbol Paramet er Test Conditions Min. Typ. Max. Unit
t
r
(V
off
)
Off Voltage Rise Time
V
cc
= 390 V, I
C
= 20 A,
R
GE
= 3.3 Ω , V
GE
= 15 V
T
J
= 25 °C
(see Figure 19)
28 ns
t
d
(
off
)
Turn-off Delay Time 100 ns
t
f
Current Fall Time 75 ns
E
off
(3)
Turn-off Switching Loss 330 450
µJ
E
ts
Total Switching Loss 550 750
µJ
t
r
(V
off
)
Off Voltage Rise Time
V
cc
= 390 V, I
C
= 20 A,
R
GE
= 3.3 Ω , V
GE
= 15 V
Tj = 125 °C
(see Figure 19)
66 ns
t
d
(
off
)
Turn-off Delay Time 150 ns
t
f
Current Fall Time 130 ns
E
off
(3)
Turn-off Switching Loss 770
µJ
E
ts
Total Switching Loss 1220
µJ
STGW20NC60VD
4/11
Table 10: Collector-Emitter Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
f
Forward On-Voltage I
f
= 10 A
I
f
= 10 A, Tj = 125 °C
1.3
1
2.0
V
V
t
rr
t
a
Q
rr
I
rrm
S
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
I
f
= 20 A ,V
R
= 40 V,
Tj = 25°C, di/dt = 100 A/µs
(see Figure 22)
44
32
66
3
0.375
ns
ns
nC
A
t
rr
t
a
Q
rr
I
rrm
S
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness factor of the diode
I
f
= 20 A ,V
R
= 40 V,
Tj =125°C, di/dt = 100 A/µs
(see Figure 22)
88
56
237
5.4
0.57
ns
ns
nC
A
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