ST STGW20NB60KD User Manual
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SHORT CIRCUIT PROOF PowerMESH™ IGBT
STGW20NB60KD
N-CHANNEL 20A - 600V TO-247
Table 1: Ge neral Features
TYPE V
STGW20NB60KD 600 V < 2.8 V 25 A
■ OFF LOSSES INCLUDE TAIL CURRENT
■ HIGH CURRENT CAPABILITY
■ HIGH INPUT IMPEDANCE (VOLTAGE
CESVCE(sat)
(Max)
@25°C
I
C
@100°C
DRIVEN)
■ LOW ON-VOLTAGE DROP (V
■ LOW ON-LOSSES
■ LOW GATE CHARGE
■ VERY HIGH FREQUENCY OPERATION
■ SHORT CIRCUIT RATED
■ LATCH CURRENT FREE OPERATION
cesat
)
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH
™
IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short circuit withstand capab ilit y.
Figure 1: Package
2
TO-247
Weight: 4.41gr ± 0.01
Max Clip Pressure: 150 N/mm
2
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ U.P.S
■ WELDING EQUIPMENTS
Table 2: Order Codes
SALES TYPE MARKING PACKAGE PACKAGING
STGW20NB60KD GW20NB60KD TO-247 TUBE
Rev. 3
1/11May 2005
STGW20NB60KD
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
I
(1)
CM
T
SC
P
TOT
T
stg
T
j
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case -- -- 0.73 °C/W
Rthj-amb Thermal Resistance Junction-ambient -- -- 50 °C/W
Collector-Emitter Voltage (VGS = 0)
600
Reverse Battery Protection 20
Gate-Emitter Voltage ± 20
Collector Current (continuous) at 25°C (#) 50
Collector Current (continuous) at 100°C (#) 25
Collector Current (pulsed) 100 A
Short Circuit Withstand 10 µs
Total Dissipation at TC = 25°C
170
Derating Factor 1.2 W/°C
Storage Temperature
Operating Junction Temperature
– 55 to 150 °C
Min. Typ. Max.
V
V
V
A
A
W
Electrical Characteristics (T
=25°C unless otherwise specified)
case
Table 5: Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collectro-Emitter Breakdown
IC = 250 µA, VGE = 0 600 V
Voltage
I
CES
I
GES
Collector-Em itter Leak age
Current (V
CE
= 0)
Gate-Emitter Leakage
Current (V
CE
= 0)
V
= Max Rating
GE
Tc=25°C
Tc=125°C
V
= ± 20 V , VCE = 0 ± 100 nA
GE
10
100
Table 6: On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(SAT)
(#) Calculated according to the iterative formula:
ICT
()
C
Gate Threshold Voltage VCE= VGE, IC= 250 µA 5 7 V
Collector-Em itter Satur ation
Voltage
VGE= 15 V, IC= 20A, Tj= 25°C
VGE= 15 V, IC= 20A,
2.3
1.9
Tj= 125°C
T
–
--------------------------------------------------------------------------------------------------
=
R
THJ C–
JMAXTC
V
CESAT MAX()TCIC
,()×
2.8 V
µA
µA
V
2/11
STGW20NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
tscw Short Circuit Withstand Time V
= 25 V, IC= 20 A 8 S
CE
= 25V, f = 1 MHz, VGE = 0 1560
V
CE
190
38
= 480 V, IC = 20 A,
V
CE
VGE = 15V,
(see Figure 19)
= 0.5 BV
ce
R
= 10 Ω, VGE= 15V
G
ces
, Tj = 125°C
10 µs
85
14.4
51
115 nC
pF
pF
pF
nC
nC
Table 8: Switching On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
t
r
Current Rise Time
VCC = 480 V, IC = 20 A
RG=10Ω, VGE= 15V, Tj= 25°C
39
35
ns
ns
(see Figure 17)
(di/dt)
Eon (2)
Turn-on Current Slope
on
Turn-on Switching Losses
VCC = 480 V, IC = 20 A
RG=10Ω, VGE= 15V, Tj= 125°C
453
675
A/µs
µJ
(see Figure 17)
2) Eon is th e turn -on los ses w hen a ty pic al dio de is used in t he tes t ci rcuit in Fi gure 1 7. If the IG BT is of fere d in a pa ck age with a co-pack
diode, the co-pack diode is used as external diode.
Table 9: Switching Off
Symbol Paramet er Test Conditions Min. Typ. Max. Unit
)
t
r(Voff
t
c
t
d(off
t
f
E
(3)
off
E
ts
t
r(Voff
t
c
t
d(off
t
f
E
(3)
off
E
ts
(3)Turn-off losses i nclude also the tail of the collec tor current.
Off Voltage Rise Time
Cross-over Time 160 ns
)
Turn-off Delay Time 105 ns
Current Fall Time 95 ns
Turn-off Switching Loss 0.5 mJ
Total Switching Loss 0.9 mJ
)
Off Voltage Rise Time
Cross-over Time 175 ns
)
Turn-off Delay Time 130 ns
Current Fall Time 150 ns
Turn-off Switching Loss 0.70 mJ
Total Switching Loss 1.35 mJ
Vcc = 480 V, IC = 20 A,
RGE = 10 Ω , VGE = 15 V
TJ = 25 °C
(see Figure 17)
Vcc = 480 V, IC = 20 A,
R
= 10 Ω , VGE = 15 V
GE
Tj = 125 °C
(see Figure 17)
25 ns
46 ns
3/11
STGW20NB60KD
Table 10: Collector-Emitter Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Q
I
I
V
t
rrm
I
f
fm
f
rr
rr
Forward Current
Forward Current pulsed
Forward On-Voltage If = 10 A
I
= 10 A, Tj = 125 °C
f
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 10 A ,VR = 27 V,
I
f
Tj =125°C, di/dt = 100 A/μs
(see Figure 20)
1.27
1
80.5
181
4.5
20
80
2.0
A
A
V
V
ns
nC
A
4/11
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