ST STGP7NC60HD, STGF7NC60HD, STGB7NC60HD User Manual

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N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK

STGP7NC60HD

STGF7NC60HD - STGB7NC60HD

Very Fast PowerMESH™ IGBT

Table 1: Ge neral Features

TYPE V

STGP7NC60HD STGF7NC60HD STGB7NC60HD

■ LOWER ON-VOLTAGE DROP (V

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOSSES INCLUDE DIODE RECOVERY

CESVCE(sat)

600 V 600 V 600 V

(Max)

@25°C < 2.5 V

< 2.5 V < 2.5 V

cesat

I

C

@100°C

14 A 6 A 14 A

)

ENERGY

■ LOWER C

■ HIGH FREQUENCY OPERATION UP TO 70

RES/CIES

RATIO

KHz

■ VERY SOFT ULTRA FAST RECOVERY ANTI

PARALLEL DIODE

■ NEW GENERATION PRODUCTS WITH

TIGHTER PARAMETER DISTRIBUTION

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH

™

IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

Figure 1: Package

3

2

1

TO-220

3

1

TO-220FP

D2PAK

Figure 2: Internal Schematic Diagram

3

2

1

APPLICATIONS

■ HIGH FREQUENCY INVERTERS

■ SMPS AND PFC IN BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

■ MOTOR DRIVERS

Table 2: Order Code

PART NUMBER MARKING PACKAGE PACKAGING

STGP7NC60HD GP7NC60HD TO-220 TUBE STGF7NC60HD GF7NC60HD TO-220FP TUBE

STGB7NC60HDT4

GB7NC60HD

2

D

PAK

TAPE & REEL

Rev.9

1/15June 2005

STGP7NC60HD - STGF7N C60HD - STGB7NC60HD

Table 3: Absolute Maxim u m ra t in gs

Symbol Parameter Value Unit

STGP7NC60HD STGB7NC60HD

Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage 20 V Gate-Emitter Voltage ±20 V

GE

Collector Current (continuous) at TC = 25°C (#)

C

Collector Current (continuous) at TC = 100°C (#)

C

()

Collector Current (pulsed) 50 A

I

Diode RMS Forward Current at TC = 25°C

F

Total Dissipation at TC = 25°C

25 10 A 14 6 A

80 25 W

I

V V

V

CM

P

CES ECR

I I

TOT

Derating Factor 0.64 0.20 W/°C

V

T

Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) -- 2500 V

ISO

Storage Temperature

stg

T

Operating Junction Temperature

j

– 55 to 150 °C

() Pulse wid th limited by max . ju nct i on temperature.

Table 4: Thermal Data

Rthj-case Thermal Resistance Junction-case TO-220

D²PAK

TO-220FP 5.0 °C/W

Rthj-amb Thermal Resistance Junction-ambient 62.5 °C/W

T

L

Maximum Lead T emperature for Soldering Purpose (1.6 mm from case, for 10 sec.)

STGF7NC60HD

600 V

20 A

Min. Typ. Max.

1.56 °C/W

300 °C

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTH ERWI SE SPEC IFIED)

CASE

Table 5: Main Parameters

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collector-Emitter Breakdown Voltage

I

CES

I

GES

V

GE(th)

V

CE(sat)

Collector cut-off Current

= 0)

(V

GE

Gate-Emitter Leakage Current (V

CE

= 0) Gate Threshold Voltage Collector-Emitter Saturation

Voltage

(#) Calculated according to the iterative formu l a:

T

–

ICTC()

--------------------------------------------------------------------------------------------------

=

R

THJ C–

JMAXTC

V

CESAT MAX()TCIC

2/15

,()×

IC = 1 mA, VGE = 0 600 V

V

= Max Rating, TC = 25 °C

CE

VCE = Max Rating, TC = 125 °C V

= ± 20V , VCE = 0 ±100 nA

GE

V

= VGE, IC = 250 µA

CE

VGE = 15V, IC = 7 A V

= 15V, IC = 7 A, Tc= 125°C

GE

3.75 5.75 V

1.85

1.7

10

1

mA

2.5 V

µA

V

STGP7NC60HD - STGF7N C60HD - STGB7NC60HD

ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1)

g

fs

C

ies

C

oes

C

res

Forward Transconductance Input Capacitance Output Capacitance 81 pF Reverse Transfer

Capacitance

Q

g

Q

ge

Q

gc

I

CL

Total Gate Charge Gate-Emitter Charge Gate-Collector Charge

Turn-Off SOA Minimum Current

(1) Pulsed: Pulse durati on= 300 µs, dut y c yc l e 1.5%

Table 7: Switching On

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

(di/dt)

t

d(on)

t

(di/dt)

r

Turn-on Delay Time Current Rise Time Turn-on Current Slope

on

Turn-on Delay Time Current Rise Time Turn-on Current Slope

on

VCE = 15 V , IC= 7 A 4.30 S V

= 25 V, f= 1 MHz, VGE = 0

CE

720 pF

17 pF

= 390 V, IC = 7 A,

V

CE

VGE = 15 V (see Figure 22)

V

= 480 V , Tj = 150°C

clamp

R

= 10 Ω, VGE = 15 V

G

VCC = 390 V, IC = 7 A R

=10 Ω, VGE= 15V, Tj= 25°C

G

(see Figure 19) VCC = 390 V, IC = 7 A

RG=10 Ω, VGE= 15V , Tj= 125°C (see Figure 20)

50 A

35

7

16

18.5

8.5

1060

18.5 7

1000

48 nC

nC nC

ns ns

A/µs

ns ns

A/µs

Table 8: Switching Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff

t

d(off

t

r(Voff

t

d(off

)

Off Voltage Rise Time

)

Turn-off Delay Time 72 ns

t

f

t

f

Current Fall Time 60 ns

)

Off Voltage Rise Time

)

Turn-off Delay Time 116 ns Current Fall Time 105 ns

Vcc = 390 V, IC = 7 A, R

= 10 Ω , VGE = 15 V

G

TJ = 25 °C (see Figure 20)

Vcc = 390 V, IC = 7 A, R

= 10 Ω , VGE = 15 V

G

Tj = 125 °C (see Figure 20)

27 ns

56 ns

Table 9: Switching Energy

Symbol Parameter Test Conditions Min. Typ. Max Unit Eon (2)

E

off

E

ts

Eon (2)

E

off

E

ts

(2) Eon i s t he tur n-on l oss es wh en a typ ica l diod e is used in th e tes t cir cui t in fig ure 2. I f the IGB T is o ffere d in a pac kage w it h a co- pa ck diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C) (3) Turn-off losses in clude also the tail of the collector current.

Turn-on Switching Losses Turn-off Switching Loss

(3)

Total Switching Loss Turn-on Switching Losses

Turn-off Switching Loss

(3)

Total Switching Loss

= 390 V, IC = 7 A

V

CC

R

= 10 Ω, VGE= 15V, Tj= 25°C

G

(see Figure 19)

= 390 V, IC = 7 A

V

CC

RG= 10 Ω, VGE= 15V, Tj= 125°C (see Figure 20)

95

115

210 140

215 355

125 150 275

µJ µJ µJ

3/15

STGP7NC60HD - STGF7N C60HD - STGB7NC60HD

Table 10: Collector-Emitter Diode

Symbol Parameter Test Condiction Min. Typ. Max. Unit

Q

I

Q

I

V

t

rr

t

a

rrm

S

t

rr

t

a

rrm

S

Forward On-Voltage If = 3.5 A

f

If = 3.5 A, Tj = 125 °C

Reverse Recovery Time

rr

Reverse Recovery Charge

If = 7 A, V

= 25 °C, di/dt = 100 A/µs

T

j

= 40 V,

R

Reverse Recovery Current Softness factor of the diode

Reverse Recovery Time

rr

Reverse Recovery Charge

If = 7 A, V

= 125 °C, di/dt = 100 A/µs

T

j

= 40 V,

R

Reverse Recovery Current Softness factor of the diode

1.3

1.1 37

22 40

2.1

0.68 61

34 98

3.2

0.79

1.9

V V

ns ns

nC

A

ns ns

nC

A

4/15

STGP7NC60HD - STGF7N C60HD - STGB7NC60HD

Figure 3: Output Characteristics

Figure 4: Transconductance

Figure 6: Transfer Characteristics

Figure 7: Collector-Emitter On Voltage vs Temperature

Figure 5: Collector-Emitter On Voltage vs Collector Curr e nt

Figure 8: Normalized Gate Threshold vs Temperature

5/15