ST STGP7NC60H, STGD7NC60H User Manual

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STGP7NC60H - STGD7NC60H

N-CHANNEL 14A - 600V TO-220/DPAK

Very Fast PowerMESH™ IGBT

Table 1: Ge neral Features

TYPE V

STGP7NC60H STGD7NC60HT4

■ LOWER ON-VOLTAGE DROP (V

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOWER C

■ HIGH FREQUENCY OPERATION UP TO 70

RES/CIES

CESVCE(sat)

600 V 600 V

RATIO

(Max)

@25°C < 2.5 V

< 2.5 V

cesat

I

C

@100°C

14 A 14 A

)

KHz

■ NEW GENERATION PRODUCTS WITH

TIGHTER PARAMETER DISTRIBUTION

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH

™

IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

APPLICATIONS

■ HIGH FREQUENCY INVERTERS

■ SMPS AND PFC IN BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

■ MOTOR DRIVERS

Figure 1: Package

3

2

1

TO-220

DPAK

Weight for TO-220: 1.92gr ± 0.01 Weight for DPAK: 0.38gr ± 0.01

Figure 2: Internal Schematic Diagram

3

1

Table 2: Order Code

PART NUMBER MARKING PACKAGE PACKAGING

STGP7NC60H GP7NC60H TO-220 TUBE

STGD7NC60HT4 D7NC60H DPAK TAPE & REEL

Rev. 2

1/12June 2005

STGP7NC60H - STGD7NC 60H

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

TO-220 DPAK

V

CES

V

ECR

V

GE

I

C

I

C

I

()

CM

P

TOT

T

stg

T

j

() Pulse width limite d by max. juncti on t em perature.

Table 4: Thermal Data

Rthj-case Thermal Resistance Junction-case TO-220 1.56

Rthj-amb Thermal Resistance Junction-ambient TO-220 62.5

T

L

Collector-Emitter Voltage (VGS = 0)

600 V Emitter-Collector Voltage 20 V Gate-Emitter Voltage ±20 V Collector Current (continuous) at TC = 25°C (#) Collector Current (continuous) at TC = 100°C (#)

25 A

14 A Collector Current (pulsed) 50 A Total Dissipation at TC = 25°C

80 70 W Derating Factor 0.64 0.56 W/°C Storage Temperature Operating Junction Temperature

– 55 to 150 °C

Min. Typ. Max.

DPAK 1.78

DPAK 100

Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.)

TO-220 300 DPAK 275

°C/W

°C

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 5: Main Parameters

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collector-Emitter Breakdown Voltage

I

CES

I

GES

V

GE(th)

V

CE(sat)

Collector cut-off Current

= 0)

(V

GE

Gate-Emitter Leakage Current (V

CE

= 0) Gate Threshold Voltage Collector-Emitter

Saturation Voltage

(#) Calculated according to the iterative formula:

T

–

ICTC()

--------------------------------------------------------------------------------------------------

=

R

THJ C–

JMAXTC

V

CESAT MAX()TCIC

IC = 1 mA, VGE = 0 600 V

V

= Max Rating, TC= 25 °C

CE

= Max Rating, TC= 125 °C

V

CE

V

= ± 20V , VCE = 0 ±100 nA

GE

V

= VGE, IC = 250 µA

CE

VGE = 15V, IC = 7 A VGE = 15V, IC = 7 A, Tc= 125°C

,()×

3.75 5.75 V

1.85

1.7

10

1

2.5 V

µA

mA

V

2/12

STGP7NC60H - STGD 7NC60H

ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1)

g

fs

C

ies

C

oes

C

res

Forward Transconductance Input Capacitance Output Capacitance 81 pF Reverse Transfer

Capacitance

Q

g

Q

ge

Q

gc

I

CL

Total Gate Charge Gate-Emitter Charge Gate-Collector Charge

Turn-Off SOA Minimum Current

(1) Pulsed: Pulse durat ion= 300 µs, duty cycle 1.5%

Table 7: Switching On

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

(di/dt)

t

d(on)

t

(di/dt)

r

Turn-on Delay Time Current Rise Time Turn-on Current Slope

on

Turn-on Delay Time Current Rise Time Turn-on Current Slope

on

VCE = 15 V , IC= 7 A 4.30 S V

= 25 V, f= 1 MHz, VGE = 0

CE

720 pF

17 pF

= 390 V, IC = 7 A,

V

CE

VGE = 15 V (see Figure 21)

V

= 480 V , Tj = 150°C

clamp

R

= 10 Ω, VGE = 15 V

G

VCC = 390 V, IC = 7 A R

=10 Ω, VGE= 15V, Tj= 25°C

G

(see Figure 18) VCC = 390 V, IC = 7 A

RG=10 Ω, VGE= 15V , Tj= 125°C (see Figure 19)

50 A

35

7

16

18.5

8.5

1060

18.5 7

1000

48 nC

nC nC

ns ns

A/µs

ns ns

A/µs

Table 8: Switching Off

Symbol Paramet er Test Conditions Min. Typ. Max. Unit

t

r(Voff

t

d(off

t

r(Voff

t

d(off

)

Off Voltage Rise Time

)

Turn-off Delay Time 72 ns

t

f

t

f

Current Fall Time 60 ns

)

Off Voltage Rise Time

)

Turn-off Delay Time 116 ns Current Fall Time 105 ns

Vcc = 390 V, IC = 7 A, R

= 10 Ω , VGE = 15 V

G

TJ = 25 °C (see Figure 19)

Vcc = 390 V, IC = 7 A, R

= 10 Ω , VGE = 15 V

G

Tj = 125 °C (see Figure 19)

27 ns

56 ns

Table 9: Switching Energy

Symbol Parameter Test Conditions Min. Typ. Max Unit Eon (2)

E

off

E

ts

Eon (2)

E

off

E

ts

2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external di ode. IGBTs & DIODE are at the same temperat ure (25°C and 125 °C) (3)Turn-off losse s include also the tail of the coll ector current .

Turn-on Switching Losses Turn-off Switching Loss

(3)

Total Switching Loss Turn-on Switching Losses

Turn-off Switching Loss

(3)

Total Switching Loss

= 390 V, IC = 7 A

V

CC

R

= 10 Ω, VGE= 15V, Tj= 25°C

G

(see Figure 19)

= 390 V, IC = 7 A

V

CC

RG= 10 Ω, VGE= 15V, Tj= 125°C (see Figure 19)

95 115 210

140 215 355

125 150 275

µJ µJ µJ

3/12

STGP7NC60H - STGD7NC 60H

Figure 3: Output Characteristics

Figure 4: Transconductance

Figure 6: Transfer Characteristics

Figure 7: Collector-Emitter On Voltage vs Temperature

Figure 5: Collector-Emitter On Voltage vs Collector Curr e nt

4/12

Figure 8: Normalized Gate Threshold vs Temperature