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查询STGD7NC60H供应商
STGP7NC60H - STGD7NC60H
N-CHANNEL 14A - 600V TO-220/DPAK
Very Fast PowerMESH™ IGBT
Table 1: Ge neral Features
TYPE V
STGP7NC60H
STGD7NC60HT4
■ LOWER ON-VOLTAGE DROP (V
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOWER C
■ HIGH FREQUENCY OPERATION UP TO 70
RES/CIES
CESVCE(sat)
600 V
600 V
RATIO
(Max)
@25°C
< 2.5 V
< 2.5 V
cesat
I
C
@100°C
14 A
14 A
)
KHz
■ NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH
™
IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized for high
frequency applications in order to achieve very
high switching performances (reduced tfall) mantaining a low voltage drop.
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
■ MOTOR DRIVERS
Figure 1: Package
3
2
1
TO-220
DPAK
Weight for TO-220: 1.92gr ± 0.01
Weight for DPAK: 0.38gr ± 0.01
Figure 2: Internal Schematic Diagram
3
1
Table 2: Order Code
PART NUMBER MARKING PACKAGE PACKAGING
STGP7NC60H GP7NC60H TO-220 TUBE
STGD7NC60HT4 D7NC60H DPAK TAPE & REEL
Rev. 2
1/12June 2005
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STGP7NC60H - STGD7NC 60H
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
TO-220 DPAK
V
CES
V
ECR
V
GE
I
C
I
C
I
()
CM
P
TOT
T
stg
T
j
() Pulse width limite d by max. juncti on t em perature.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case TO-220 1.56
Rthj-amb Thermal Resistance Junction-ambient TO-220 62.5
T
L
Collector-Emitter Voltage (VGS = 0)
600 V
Emitter-Collector Voltage 20 V
Gate-Emitter Voltage ±20 V
Collector Current (continuous) at TC = 25°C (#)
Collector Current (continuous) at TC = 100°C (#)
25 A
14 A
Collector Current (pulsed) 50 A
Total Dissipation at TC = 25°C
80 70 W
Derating Factor 0.64 0.56 W/°C
Storage Temperature
Operating Junction Temperature
– 55 to 150 °C
Min. Typ. Max.
DPAK 1.78
DPAK 100
Maximum Lead Temperature for Soldering
Purpose (1.6 mm from case, for 10 sec.)
TO-220 300
DPAK 275
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: Main Parameters
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter
Breakdown Voltage
I
CES
I
GES
V
GE(th)
V
CE(sat)
Collector cut-off Current
= 0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
= 0)
Gate Threshold Voltage
Collector-Emitter
Saturation Voltage
(#) Calculated according to the iterative formula:
T
–
ICTC()
--------------------------------------------------------------------------------------------------
=
R
THJ C–
JMAXTC
V
CESAT MAX()TCIC
IC = 1 mA, VGE = 0 600 V
V
= Max Rating, TC= 25 °C
CE
= Max Rating, TC= 125 °C
V
CE
V
= ± 20V , VCE = 0 ±100 nA
GE
V
= VGE, IC = 250 µA
CE
VGE = 15V, IC = 7 A
VGE = 15V, IC = 7 A, Tc= 125°C
,()×
3.75 5.75 V
1.85
1.7
10
1
2.5 V
µA
mA
V
2/12
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STGP7NC60H - STGD 7NC60H
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
g
fs
C
ies
C
oes
C
res
Forward Transconductance
Input Capacitance
Output Capacitance 81 pF
Reverse Transfer
Capacitance
Q
g
Q
ge
Q
gc
I
CL
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-Off SOA Minimum
Current
(1) Pulsed: Pulse durat ion= 300 µs, duty cycle 1.5%
Table 7: Switching On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
t
d(on)
t
(di/dt)
r
r
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
on
VCE = 15 V , IC= 7 A 4.30 S
V
= 25 V, f= 1 MHz, VGE = 0
CE
720 pF
17 pF
= 390 V, IC = 7 A,
V
CE
VGE = 15 V
(see Figure 21)
V
= 480 V , Tj = 150°C
clamp
R
= 10 Ω, VGE = 15 V
G
VCC = 390 V, IC = 7 A
R
=10 Ω, VGE= 15V, Tj= 25°C
G
(see Figure 18)
VCC = 390 V, IC = 7 A
RG=10 Ω, VGE= 15V , Tj= 125°C
(see Figure 19)
50 A
35
7
16
18.5
8.5
1060
18.5
7
1000
48 nC
nC
nC
ns
ns
A/µs
ns
ns
A/µs
Table 8: Switching Off
Symbol Paramet er Test Conditions Min. Typ. Max. Unit
t
r(Voff
t
d(off
t
r(Voff
t
d(off
)
Off Voltage Rise Time
)
Turn-off Delay Time 72 ns
t
f
t
f
Current Fall Time 60 ns
)
Off Voltage Rise Time
)
Turn-off Delay Time 116 ns
Current Fall Time 105 ns
Vcc = 390 V, IC = 7 A,
R
= 10 Ω , VGE = 15 V
G
TJ = 25 °C
(see Figure 19)
Vcc = 390 V, IC = 7 A,
R
= 10 Ω , VGE = 15 V
G
Tj = 125 °C
(see Figure 19)
27 ns
56 ns
Table 9: Switching Energy
Symbol Parameter Test Conditions Min. Typ. Max Unit
Eon (2)
E
off
E
ts
Eon (2)
E
off
E
ts
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external di ode. IGBTs & DIODE are at the same temperat ure (25°C and 125 °C)
(3)Turn-off losse s include also the tail of the coll ector current .
Turn-on Switching Losses
Turn-off Switching Loss
(3)
Total Switching Loss
Turn-on Switching Losses
Turn-off Switching Loss
(3)
Total Switching Loss
= 390 V, IC = 7 A
V
CC
R
= 10 Ω, VGE= 15V, Tj= 25°C
G
(see Figure 19)
= 390 V, IC = 7 A
V
CC
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 19)
95
115
210
140
215
355
125
150
275
µJ
µJ
µJ
µJ
µJ
µJ
3/12
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STGP7NC60H - STGD7NC 60H
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Curr e nt
4/12
Figure 8: Normalized Gate Threshold vs Temperature