ST STGP7NB60FD, STGB7NB60FD User Manual

STGB7NB60FD

STGP7NB60FD - STGB7NB60FD

N-CHANNEL 7A - 600V TO-220 / D2PAK

PowerMESH™ IGBT

TYPE	VCES	VCE(sat) (Max)	IC
		@25°C	@100°C
STGP7NB60FD	600 V	< 2.4 V	7 A
STGB7NB60FD	600 V	< 2.4 V	7 A

■HIGH INPUT IMPEDANCE

■LOW ON-VOLTAGE DROP (Vcesat)

■OFF LOSSES INCLUDE TAIL CURRENT

■LOW GATE CHARGE

■HIGH CURRENT CAPABILITY

■HIGH FREQUENCY OPERATION

■CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE

3	3
2	1
1	D2PAK
TO-220

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "F" identifies a family optimized to achieve very low switching switching times for high frequency applications (<40KHZ)

APPLICATIONS

■MOTOR CONTROLS

■SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES

INTERNAL SCHEMATIC DIAGRAM

ORDERING INFORMATION

SALES TYPE	MARKING	PACKAGE	PACKAGING
STGP7NB60FD	GP7NB60FD	TO-220	TUBE
STGB7NB60FDT4	GB7NB60FD	D2PAK	TAPE & REEL

June 2003

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STGP7NB60FD - STGB7NB60FD

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600	V
VGE	Gate-Emitter Voltage	±20	V
IC	Collector Current (continuous) at TC = 25°C	14	A
IC	Collector Current (continuous) at TC = 100°C	7	A
ICM ( )	Collector Current (pulsed)	56	A
PTOT	Total Dissipation at TC = 25°C	80	W
	Derating Factor	0.64	W/°C
Tstg	Storage Temperature	– 55 to 150	°C
Tj	Max. Operating Junction Temperature	150	°C

( ) Pulse width limited by safe operating area

THERMAL DATA

Rthj-case	Thermal Resistance Junction-case Max	1.56	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max	62.5	°C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VBR(CES)	Collector-Emitter Breakdown	IC = 250 µA, VGE = 0	600			V
	Voltage
ICES	Collector cut-off	VCE = Max Rating, TC = 25 °C			50	µA
	(VGE = 0)	VCE = Max Rating, TC = 125 °C			100	µA
IGES	Gate-Emitter Leakage	VGE = ± 20V , VCE = 0			±100	nA
	Current (VCE = 0)

ON (1)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VGE(th)	Gate Threshold Voltage	VCE = VGE, IC = 250 µA	3		5	V
VCE(sat)	Collector-Emitter Saturation	VGE = 15V, IC = 7 A		2.0	2.4	V
	Voltage	VGE = 15V, IC= 7 A, Tj =125°C		1.6		V

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ELECTRICAL CHARACTERISTICS (CONTINUED)

DYNAMIC

Symbol		Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)		Forward Transconductance	VCE = 25 V, Ic = 7 A		6		S
Cies		Input Capacitance	VCE = 25V, f = 1 MHz, VGE = 0		540		pF
Coes		Output Capacitance			80		pF
Cres		Reverse Transfer			13		pF
		Capacitance
Qg		Total Gate Charge	VCE = 480V, IC = 7 A,		37	50	nC
Qge		Gate-Emitter Charge	VGE = 15V		4		nC
Qgc		Gate-Collector Charge			18		nC
ICL		Latching Current	Vclamp = 480 V		28		A
			Tj = 125°C , R G = 10 Ω
SWITCHING ON
Symbol		Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)		Turn-on Delay Time	VCC = 480 V, IC = 7 A RG = 10Ω ,		17		ns
tr		Rise Time	VGE = 15 V		6		ns
(di/dt)on		Turn-on Current Slope	VCC= 480 V, IC = 7 A RG=10Ω		890		A/µs
Eon		Turn-on Switching Losses	VGE = 15 V,Tj =125°C		59		µJ
SWITCHING OFF
Symbol		Parameter	Test Conditions	Min.	Typ.	Max.	Unit
tc		Cross-over Time	Vcc = 480 V, IC = 7 A,		190		ns
tr(Voff)		Off Voltage Rise Time	RG = 10 Ω , VGE = 15 V		45		ns
td(off)		Delay Time			107		ns
tf		Fall Time			140		ns
Eoff(**)		Turn-off Switching Loss			240		μJ
Ets		Total Switching Loss			300		μJ
tc		Cross-over Time	Vcc = 480 V, IC = 7 A,		410		ns
tr(Voff)		Off Voltage Rise Time	RG = 10 Ω , VGE = 15 V		195		ns
			Tj = 125 °C
td(off)		Delay Time			204		ns
tf		Fall Time			650		ns
Eoff(**)		Turn-off Switching Loss			565		μJ
Ets		Total Switching Loss			625		μJ
COLLECTOR-EMITTER DIODE
Symbol		Parameter	Test Conditions	Min.	Typ.	Max.	Unit
If		Forward Current				7	A
Ifm		Forward Current pulsed				56	A
Vf		Forward On-Voltage	If = 3.5 A		1.4	1.9	V
			If = 3.5 A, Tj = 125 °C		1.1		V
trr		Reverse Recovery Time	If = 7 A ,VR = 40 V,		50		ns
Qrr		Reverse Recovery Charge	Tj =125°C, di/dt = 100 A/ μs		70		nC
Irrm		Reverse Recovery Current			2.7		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization)

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Output Characteristics		Transfer Characteristics

Transconductance	Normalized Collector-Emitter On Voltage vs Temp.
Collector-Emitter On Voltage vs Collector Current	Gate Threshold vs Temperature

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