ST STGP7NB120SD User Manual

STGP7NB120SD

STGP7NB120SD

N-CHANNEL 7A - 1200V - TO-220

PowerMESH™ IGBT

TYPE	VCES	VCE(sat)	IC
STGP7NB120SD	1200 V	< 2.1 V	7 A

■HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

■VERY LOW ON-VOLTAGE DROP (Vcesat)

■OFF LOSSES INCLUDE TAIL CURRENT

■HIGH CURRENT CAPABILITY

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).

APPLICATIONS

■MOTOR CONTROL

■LIGHT DIMMER

■INTRUSH CURRENT LIMITATION

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VGS = 0)	1200	V
VECR	Reverse Battery Protection	20	V
VGE	Gate-Emitter Voltage	±20	V
IC	Collector Current (continuous) at TC = 25°C	10	A
IC	Collector Current (continuous) at TC = 100°C	7	A
ICM ( )	Collector Current (pulsed)	20	A
PTOT	Total Dissipation at TC = 25°C	90	W
	Derating Factor	0.7	W/°C
Tstg	Storage Temperature	–65 to 150	°C
Tj	Max. Operating Junction Temperature	150	°C

(●) Pulse width limited by safe operating area

November 2002

1/8

STGP7NB120SD

THERMAL DATA

Rthj-case	Thermal Resistance Junction-case Max	1.38	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max	62.5	°C/W
Rthc-h	Thermal Resistance Case-heatsink Typ	0.5	°C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VBR(CES)	Collector-Emitter Breakdown	IC = 250 µA, VGE = 0	1200			V
	Voltage
VBR(ECR)	Emitter-Collector Breakdown	IC = 10mA, VGE = 0	20			V
	Voltage
ICES	Collector cut-off	VCE = Max Rating, TC = 25 °C			50	µA
	(VGE = 0)	VCE = Max Rating, TC = 125 °C			250	µA
IGES	Gate-Emitter Leakage	VGE = ±20V , VCE = 0			±100	nA
	Current (VCE = 0)

ON (1)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VGE(th)	Gate Threshold Voltage	VCE = VGE, IC = 250µA	3		5	V
VCE(sat)	Collector-Emitter Saturation	VGE = 15V, IC = 3.5 A			1.6	V
	Voltage	VGE = 15V, IC = 7 A			2.1	V
		VGE = 15V, IC = 10 A		1.7		V

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs	Forward Transconductance	VCE = 25 V , IC =7 A	2.5	4.5		S
Cies	Input Capacitance	VCE = 25V, f = 1 MHz, VGE = 0		430		pF
Coes	Output Capacitance			40		pF
Cres	Reverse Transfer			7		pF
	Capacitance
Qg	Gate Charge	VCE = 960V, IC = 7 A,		29		nC
		VGE = 15V
ICL	Latching Current	Vclamp = 960V , Tj = 150°C	10			A
		RG = 1KΩ

SWITCHING ON

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VCC = 960 V, IC = 7 A		570		ns
tr	Rise Time	RG = 1KΩ , VGE = 15 V		270		ns
(di/dt)on	Turn-on Current Slope	VCC= 960 V, IC = 7 A, RG=1KΩ		800		A/µs
Eon	Turn-on Switching Losses	VGE = 15 V, Tj = 125°C		3.2		mJ

2/8

STGP7NB120SD

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING OFF

Symbol	Parameter	Test Conditions		Min.		Typ.		Max.		Unit
tc	Cross-over Time	Vcc = 960 V, IC = 7 A,			4.9					μs
tr(Voff)	Off Voltage Rise Time	RGE = 1KΩ , VGE = 15 V			2.9					μs
tf	Fall Time				3.3					μs
Eoff(**)	Turn-off Switching Loss				15					mJ
tc	Cross-over Time	Vcc = 960 V, IC = 7 A,			7.5					μs
tr(Voff)	Off Voltage Rise Time	RGE = 1KΩ , VGE = 15 V			5.5					μs
		Tj = 125 °C
										μs
tf	Fall Time				6.2
Eoff(**)	Turn-off Switching Loss				22					mJ
COLLECTOR-EMITTER DIODE
Symbol	Parameter	Test Conditions		Min.		Typ.		Max.		Unit
If	Forward Current							3.5		A
Ifm	Forward Current pulsed							28		A
Vf	Forward On-Voltage	If =3.5 A				1.7		2.0		V
		If = 3.5 A, Tj = 125 °C				1.5				V
trr	Reverse Recovery Time	If = 3.5 A ,VR = 600 V,				190				ns
Qrr	Reverse Recovery Charge	Tj =125°C, di/dt = 100A/ μs				850				nC
Irrm	Reverse Recovery Current					9				A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization)

3/8