ST STGP3NB60MD, STGB3NB60MD User Manual

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STGP3NB60MD - STGB3NB60MD

N-CHANNEL 3A - 600V TO-220 / D2PAK

PowerMESH™ IGBT

TYPE V

CES

V

CE(sat) (Max)

@25°C

STGP3NB60MD STGB3NB60MD

■ HIGH INPUT IMPEDANCE

■ LOW ON-VOLTAGE DROP (V

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOW GATE CHARGE

■ HIGH CURRENT CAPABILITY

■ HIGH FREQUENCY OPERATION

■ CO-PACKAGED WITH TURBOSWITCH™

600 V 600 V

<1.9 V

< 1.9V

cesat

)

I

C

@100°C

3A 3A

ANTIPARALLEL DIODE

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectroni cs has d esigned an advanced family of IGB Ts, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "M" identifies a family optimized to achieve very low switching switching times for high frequency applications (<20KHZ)

3

1

TO-220

3

2

1

D2PAK

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■ MOTOR CONTROLS

■ SMPS AND PFC AND BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STGP3NB60MD GP3NB60MD TO-220 TUBE

STGB3NB60MDT4 GB3NB60MD

2

PAK

D

TAPE & REEL

1/11June 2003

STGP3NB60MD - STGB 3NB60MD

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CES

V

GE

I I

I

CM

P

TOT

T

stg

T

() Pulse width limited by safe operating area

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 1.8 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

Collector-Emitter Voltage (VGS=0)

600 V Gate-Emitter Voltage ±20 V Collector Current (continuous) at TC= 25°C

C

Collector Current (continuous) at TC= 100°C

C

()

Collector Current (pulsed) 24 A Total Dissipation at TC= 25°C

6A 3A

68 W Derating Factor 0.55 W/°C Storage Temperature – 55 to 150 °C Max. Operating Junction Temperature 150 °C

j

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS O THERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collector-Emitter Breakdown

IC= 250 µA, VGE=0 600 V

Voltage

I

CES

I

GES

Collector cut-off

=0)

(V

GE

Gate-Emitter Leakage Current (V

CE

=0)

V

= Max Rating, TC=25°C

CE

= Max Rating, TC= 125 °C

V

CE

V

=±20V,VCE= 0 ±100 nA

GE

50 µA

100 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

V

CE(sat)

Gate Threshold Voltage Collector-Emitter Saturation

Voltage

V

CE=VGE,IC

VGE=15V,IC=3A VGE=15V,IC=3A,Tj=125°C

= 250 µA

35V

1.5 1.9 V

1.2 V

2/11

STGP3NB60MD - STGB3NB60MD

ELECTRICAL CHARACTERISTICS (CONTINUED)

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1)

g

fs

C

oes

C

res

Q Q Q

I

CL

Forward Transconductance Input Capacitance

ies

Output Capacitance Reverse Transfer Capacitance

Total Gate Charge

g

Gate-Emitter Charge

ge

Gate-Collector Charge

gc

Latching Current V

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

(di/dt)

Eon

Turn-on Delay Time Rise Time

r

Turn-on Current Slope

on

Turn-on Switching Losses

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff

td(

E

tr(V

t

d(off

E

t

off

E

t

off

E

Cross-over Time

c

)

Off Voltage Rise Time 85 ns

)

Delay Time 120 ns

off

Fall Time 240 ns

f

(**)

Turn-off Switching Loss 175 Total Switching Loss 205

ts

Cross-over Time

c

)

Off Voltage Rise Time 270 ns

off

)

Delay Time 344 ns Fall Time 515 ns

f

(**)

Turn-off Switching Loss 458 Total Switching Loss 488

ts

VCE=15V,Ic=3A

=25V,f=1MHz,VGE= 0 240

V

CE

=480V,IC=3A,

V

CE

= 15V

V

GE

= 480V, RG=10 Ω

clamp

Tj = 125°C

= 480 V, IC= 3A, RG=10Ω

V

CC

=15V

V

GE

V

= 480 V, IC=3A,RG=10Ω

CC

= 15 V,Tj =125°C

V

GE

V

= 480 V, IC=3A,

cc

RG=10Ω,VGE=15V

V

= 480 V, IC=3A,

cc

RG=10Ω,VGE=15V Tj = 125 °C

5S

33

6

15

20

2.2 8

20 A

10

4

570

30

330 ns

810 ns

pF pF pF

nC nC nC

ns ns

A/µs

µJ

µJ µJ

COLLECTOR-EMITTER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

f

I

fm

V

t

rr

Q I

rrm

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by max. junction t emperature.

(**)Losses include Also the Tail (Jedec Standardization)

Forward Current Forward Current pulsed

Forward On-Voltage If= 1.5 A

f

Reverse Recovery Time Reverse Recovery Charge

rr

Reverse Recovery Current

I

= 1.5 A, Tj = 125 °C

f

=3A,VR=35V,

I

f

Tj =125°C, di/dt = 100 A/µs

1.4

1.1

45 70

2.7

3

24

1.9

A A

V V

ns nC

A

3/11

STGP3NB60MD - STGB 3NB60MD

Output Characteristics

Transfer Characteri stics

Normalized Collector-Emitter On Voltage vs Temp.Transconductance

Collector-Emitter On V oltage vs Collector Current

4/11

Collector-Emitter On V oltage vs Temperature