GB3NB60KD
STGP3NB60K - STGD3NB60K
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK
PowerMESH™ IGBT
TYPE |
VCES |
VCE(sat) |
IC |
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(Typ) @125°C |
@125°C |
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STGP3NB60K |
600 V |
< 2 V |
3 A |
STGD3NB60K |
600 V |
< 2 V |
3 A |
STGP3NB60KD |
600 V |
< 2 V |
3 A |
STGP3NB60KDFP |
600 V |
< 2 V |
3 A |
STGB3NB60KD |
600 V |
< 2 V |
3 A |
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■HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
■LOW ON-VOLTAGE DROP (Vcesat)
■LOW GATE CHARGE
■HIGH CURRENT CAPABILITY
■OFF LOSSES INCLUDE TAIL CURRENT
■HIGH FREQUENCY OPERATION
■SHORT CIRCUIT RATED
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability.
APPLICATIONS
■HIGH FREQUENCY MOTOR CONTROLS
■SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES
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3 |
3 |
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2 |
2 |
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1 |
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1 |
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TO-220 |
TO-220FP |
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3 |
3 |
1 |
1 |
DPAK |
D2PAK |
INTERNAL SCHEMATIC DIAGRAM
Std. Version |
“D” Version |
ORDERING INFORMATION
SALES TYPE |
MARKING |
PACKAGE |
PACKAGING |
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STGP3NB60K |
GP3NB60K |
TO-220 |
TUBE |
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STGD3NB60KT4 |
GD3NB60K |
DPAK |
TAPE & REEL |
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STGP3NB60KD |
GP3NB60KD |
TO-220 |
TUBE |
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STGP3NB60KDFP |
GP3NB60KDFP |
TO-220FP |
TUBE |
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STGB3NB60KDT4 |
GB3NB60KD |
D2PAK |
TAPE & REEL |
May 2002 |
1/14 |
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
ABSOLUTE MAXIMUM RATINGS
Symbol |
Parameter |
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Value |
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Unit |
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TO-220 |
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TO-220FP |
DPAK |
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D2PAK |
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VCES |
Collector-Emitter Voltage (VGS = 0) |
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600 |
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V |
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VECR |
Emitter-Collector Voltage |
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20 |
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V |
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VGE |
Gate-Emitter Voltage |
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±20 |
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V |
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IC |
Collector Current (continuos) at TC = 25°C |
6 |
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6 |
6 |
A |
IC |
Collector Current (continuos) at TC = 100°C |
3 |
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3 |
3 |
A |
ICM (n) |
Collector Current (pulsed) |
24 |
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24 |
24 |
A |
If (1) |
Forward Current |
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3 |
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A |
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Ifm (1) |
Forward Current Pulsed |
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24 |
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A |
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PTOT |
Total Dissipation at TC = 25°C |
68 |
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25 |
60 |
W |
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Derating Factor |
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0.75 |
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W/°C |
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VISO |
Insulation Withstand Voltage A.C. |
-- |
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2500 |
-- |
V |
Tstg |
Storage Temperature |
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– 55 to 150 |
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°C |
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Tj |
Max. Operating Junction Temperature |
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150 |
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(n) Pulse width limited by safe operating area
(1) For “D” version only
THERMAL DATA
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TO-220 |
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TO-220FP |
DPAK |
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D2PAK |
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Rthj-case |
Thermal Resistance Junction-case Max |
1.8 |
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5 |
2.1 |
°C/W |
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Rthj-amb |
Thermal Resistance Junction-ambient Max |
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62.5 |
100 |
°C/W |
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Rthc-h |
Thermal Resistance Case-heatsink Typ |
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0.5 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) MAIN PARAMETERS
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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VBR(CES) |
Collector-Emitter Breakdown |
IC = 250 µA, VGE = 0 |
600 |
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V |
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Voltage |
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ICES |
Collector cut-off |
VCE = Max Rating, TC = 25 °C |
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50 |
µA |
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(VGE = 0) |
VCE = Max Rating, TC = 125 °C |
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500 |
µA |
IGES |
Gate-Emitter Leakage |
VGE = ±20V , VCE = 0 |
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±100 |
nA |
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Current (VCE = 0) |
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VGE(th) |
Gate Threshold Voltage |
VCE = VGE, IC = 250µA |
5 |
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7 |
V |
VCE(sat) |
Collector-Emitter Saturation |
VGE = 15V, IC = 3 A |
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2.3 |
2.8 |
V |
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Voltage |
VGE = 15V, IC = 3 A, Tj =125°C |
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1.9 |
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V |
2/14
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
SWITCHING PARAMETERS
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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gfs |
Forward Transconductance |
VCE = 25V, Ic = 3 A |
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2.4 |
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S |
Cies |
Input Capacitance |
VCE = 25V, f = 1 MHz, VGE = 0 |
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218 |
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pF |
Coes |
Output Capacitance |
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33 |
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pF |
Cres |
Reverse Transfer |
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5.8 |
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pF |
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Capacitance |
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Qg |
Total Gate Charge |
VCE = 480V, IC = 3 A, |
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14 |
18 |
nC |
Qge |
Gate-Emitter Charge |
VGE = 15V |
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3.3 |
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nC |
Qgc |
Gate-Collector Charge |
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7.5 |
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nC |
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tscw |
Short Circuit Withstand Time |
Vce = 0.5 VBR(CES), VGE=15V, |
10 |
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µs |
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Tj = 125°C , R G = 10 Ω |
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td(on) |
Turn-on Delay Time |
VCC = 480 V, IC = 3 A |
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14 |
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ns |
tr |
Rise Time |
RG = 10Ω, VGE = 15 V |
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5 |
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ns |
(di/dt)on |
Turn-on Current Slope |
VCC= 480 V, IC = 3 A RG=10Ω |
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520 |
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A/µs |
Eon |
Turn-on Switching Losses |
VGE = 15 V,Tj = 125°C |
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30 |
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μJ |
tc |
Cross-over Time |
Vcc = 480 V, IC = 3 A, |
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122 |
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ns |
tr(Voff) |
Off Voltage Rise Time |
RGE = 10 Ω , VGE = 15 V |
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26.5 |
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td(off) |
Delay Time |
Tj = 25 °C |
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33 |
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ns |
tf |
Fall Time |
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100 |
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ns |
Eoff(**) |
Turn-off Switching Loss |
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58 |
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μJ |
Ets |
Total Switching Loss |
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85 |
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μJ |
tc |
Cross-over Time |
Vcc = 480 V, IC = 3 A, |
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210 |
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ns |
tr(Voff) |
Off Voltage Rise Time |
RGE = 10 Ω , VGE = 15 V |
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66 |
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ns |
td(off) |
Delay Time |
Tj = 125 °C |
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100 |
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tf |
Fall Time |
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120 |
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ns |
Eoff(**) |
Turn-off Switching Loss |
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165 |
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μJ |
Ets |
Total Switching Loss |
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195 |
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μJ |
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COLLECTOR-EMITTER DIODE (“D” VERSION) |
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Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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Vf |
Forward On-Voltage |
If = 1.5 A |
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1.31 |
1.8 |
V |
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If = 1.5 A, Tj = 125 °C |
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0.95 |
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V |
trr |
Reverse Recovery Time |
If = 3 A ,VR = 35 V, |
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45 |
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ns |
Qrr |
Reverse Recovery Charge |
Tj =125°C, di/dt = 100A/ μs |
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70 |
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nC |
Irrm |
Reverse Recovery Current |
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2.7 |
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A |
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization)
3/14
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
Output Characteristics |
Transfer Characteristics |
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Transconductance |
Normalized Collector-Emitter On Voltage vs Temp. |
Collector-Emitter On Voltage vs Collector Current |
Gate Threshold vs Temperature |
4/14
STGP3NB60K/STGD3NB60K/STGP3NB60KD/STGP3NB60KDFP/STGB3NB60KD
Normalized Breakdown Voltage vs Temperature |
Capacitance Variations |
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Gate Charge vs Gate-Emitter Voltage |
Total Switching Losses vs Gate Resistance |
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Total Switching Losses vs Temperature |
Emitter-collector Diode Characteristics |
5/14 |