ST STGP3NB60H User Manual
STGP3NB60H
N-CHANNEL 3A - 600V TO-220
PowerMESH IGBT
■ HIGHINPUT IMPEDANCE
(VOLTAGEDRIVEN)
■ LOW ON-VOLTAGEDROP (V
cesat
)
■ LOW GATECHARGE
■ HIGHCURRENTCAPABILITY
■ VERYHIGH FREQUENCYOPERATION
■ OFFLOSSES INCLUDETAIL CURRENT
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).
APPLICATIONS
■ HIGHFREQUENCY MOTOR CONTROLS
■ SMPSAND PFC IN BOTH HARDSWITCH
AND RESONANTTOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
CES
Collect o r -Em i t t er Voltage (V
GS
= 0) 600 V
V
ECR
Emit t er-Collect or Volt age 20 V
V
GE
Gate-Emitter V oltage
±
20 V
I
C
Collect o r Current (continuous ) at T
c
=25
o
C6A
I
C
Collect o r Current (continuous ) at T
c
= 100
o
C3A
I
CM
(•) Collect o r Current (pulsed) 24 A
P
tot
Tot al Dissipation at T
c
=25
o
C70W
Derat ing Factor 0.56 W/
o
C
T
stg
Sto rage Temperature -65 to 150
o
C
T
j
Max. Oper a t ing Junction Tem per ature 150
o
C
(•) Pulse width limited by max. junction temperature
TYPE V
CES
V
CE(sat)
I
C
ST G P3NB60H 600 V < 2.8 V 3 A
June 1999
1
2
3
TO-220
1/8
查询STGP3NB60H供应商
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
1.78
62.5
0.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
j
=25
o
C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
BR(CES)
Collector-Emitter
Break dow n Voltage
I
C
=250µAV
GE
= 0 600 V
I
CES
Collect o r cut-of f
(V
GE
=0)
V
CE
=MaxRating T
j
=25
o
C
V
CE
=MaxRating T
j
=125
o
C
10
100
µA
µ
A
I
GES
Gat e- Em i t t er Leakage
Current (V
CE
=0)
V
GE
= ± 20 V V
CE
=0 ±100 nA
ON(
∗
)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GE(th)
Gate Th reshold
Voltage
V
CE
=V
GE
I
C
= 250 µ A35V
V
CE(SAT)
Collector-Emitter
Sat urat ion Voltage
V
GE
=15V I
C
=3A
V
GE
=15V I
C
=3A T
j
=125
o
C
2.4
1.9
2.8 V
V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
g
fs
Forward
Tr ansc on duc tance
V
CE
=25 V I
C
=3A 1.3 2.4 S
C
ies
C
oes
C
res
Input Capaci t anc e
Out put Capac it ance
Reverse Transfer
Capacit a nc e
V
CE
=25V f=1MHz V
GE
= 0 160
23
4.5
235
33
6.6
300
43
8.6
pF
pF
pF
Q
G
Q
GE
Q
GC
Tot al Gate Charge
Gate-Emitt er C harge
Gat e- Col lect or C har ge
V
CE
= 480 V I
C
=3A V
GE
=15V 21
6
7.6
27 nC
nC
nC
I
CL
Latc hing C urrent V
clamp
=480V R
G
=10Ω
T
j
= 150
o
C
12 A
SWITCHINGON
Symbol Param et er Test Co n d i t ions Mi n. Typ. Max. Un it
t
d(on)
t
r
Delay Time
Rise Tim e
V
CC
= 480 V I
C
=3A
V
GE
=15V R
G
=10Ω
16
30
ns
ns
(di/dt)
on
E
on
(
❍
)
Tur n-on Current Slope
Tur n-on Switching
Losses
V
CC
= 480 V I
C
=3A
R
G
=10Ω V
GE
=15V
T
j
= 125
o
C
400
37
A/
µ
s
µ
J
STGP3NB60H
2/8
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
c
t
r
(v
off
)
t
d
(off)
t
f
E
off
(**)
E
ts
Cross-Over Tim e
Off Voltage Rise Time
Delay Time
Fall T ime
Turn-off Switching Loss
Tot al Switching Lo ss
V
CC
=480V I
C
=3A
R
GE
=10
Ω
V
GE
=15V
90
36
53
70
33
65
ns
ns
ns
ns
µJ
µ
J
t
c
t
r
(v
off
)
t
d
(off)
t
f
E
off
(**)
E
ts
Cross-Over Tim e
Off Voltage Rise Time
Delay Time
Fall T ime
Turn-off Switching Loss
Tot al Switching Lo ss
VCC = 480 V I
C
=3A
R
GE
=10
Ω
V
GE
=15V
T
j
= 125
o
C
180
82
58
110
88
125
ns
ns
ns
ns
µ
J
µ
J
(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(**)Losses Include Also The Tail (Jedec Standardization)
ThermalImpedance
STGP3NB60H
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