ST STGP20NC60V, STGW20NC60V User Manual
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STGP20NC60V
STGW20NC60V
N-CHANNEL 30A - 600V - TO-220/TO-247
Very Fast PowerMESH™ IGBT
Table 1: Ge neral Features
TYPE V
STGP20NC60V
STGW20NC60V
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOSSES INCLUDE DIODE RECOVERY
CESVCE(sat)
600 V
600 V
(Max)
@25°C
< 2.5 V
< 2.5 V
I
C
@100°C
30 A
30 A
ENERGY
■ HIGH CURRENT CAPABILITY
■ HIGH FREQUENCY OPERATION UP TO 50
KHz
■ LOWER C
■ NEW GENERATION PRODUCTS WITH
RES
/ C
IES
RATIO
TIGHTER PARAMETER DISTRUBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH
™
IGBTs, with outstanding performances.
The suffix “V” identifies a family optimized for high
frequency.
Figure 1: Package
3
2
1
TO-220
TO-247
Weight for TO-220: 1.92gr ± 0.01
Weight for TO-247: 4.41gr ± 0.01
Max Clip Pressure: 150 N/mm
2
Figure 2: Internal Schematic Diagram
3
2
1
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
■ UPS
■ MOTOR DRIVERS
Table 2: Order Codes
SALES TYPE MARKING PACKAGE PACKAGING
STGP20NC60V GP20NC60V TO-220 TUBE
STGW20NC60V GW20NC60V TO-247 TUBE
Rev. 4
1/11July 2004
STGP20NC60V - STGW20NC 60V
Table 3: Absolute Maximum ratings
Symbol Parameter Value Symbol
V
CES
V
ECR
V
GE
I
C
I
C
I
(1)
CM
P
TOT
T
stg
T
j
(1)Pulse width limited by max. junction temperature.
Collector-Emitter Voltage (VGS = 0)
600
Reverse Battery Protection 20
Gate-Emitter Voltage ± 20
Collector Current (continuous) at 25°C (#) 60
Collector Current (continuous) at 100°C (#) 30
Collector Current (pulsed) 100 A
Total Dissipation at TC = 25°C
200
Derating Factor 1.6 W/°C
Storage Temperature
Operating Junction Temperature
– 55 to 150 °C
V
V
V
A
A
W
Table 4: Thermal Data
Min. Typ. Max.
Rthj-case Thermal Resistance Junction-case 0.625 °C/W
Rthj-amb Thermal Resistance Junction-ambient TO-220 62.5 °C/W
TO-247 50
T
L
Maximum Lead T emperature for Soldering
300 °C
Purpose (1.6 mm from case, for 10 sec.)
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collectro-Emitter Breakdown
IC = 1 mA, VGE = 0 600 V
Voltage
I
CES
I
GES
Collector-Em itter Leak age
Current (V
CE
= 0)
Gate-Emitter Leakage
Current (V
CE
= 0)
V
= Max Rating
GE
Tc=25°C
Tc=125°C
V
= ± 20 V , VCE = 0 ± 100 nA
GE
10
1
Table 6: On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(SAT)
(#) Calculated according to the iterative formula:
Gate Threshold Voltage VCE= VGE, IC= 250 µA 3.75 5.75 V
Collector-Em itter Satur ation
Voltage
VGE= 15 V, IC= 20A, Tj= 25°C
VGE= 15 V, IC= 20A,
1.8
1.7
2.5 V
Tj= 125°C
µA
mA
V
ICTC()
2/11
T
–
--------------------------------------------------------------------------------------------------
=
R
THJ C–
JMAXTC
V
CESAT MAX()TCIC
,()×
STGP20NC60V - STGW20NC60V
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
I
CL
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-Off SOA Minimum
Current
Table 8: Switching On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
(di/dt)
Eon (2)
t
d(on)
t
r
(di/dt)
Eon (2)
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is us ed as external di ode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
Table 9: Switching Off
Symbol Paramet er Test Conditions Min. Typ. Max . Unit
)
t
r(Voff
t
d(off
t
f
(3)
E
off
E
ts
t
r(Voff
t
d(off
t
f
E
(3)
off
E
ts
(3)Turn-off losses include al so the tail of the collector current.
Off Voltage Rise Time
)
Turn-off Delay Time 100 ns
Current Fall Time 75 ns
Turn-off Switching Loss 330 450
Total Switching Loss 550 750
)
Off Voltage Rise Time
)
Turn-off Delay Time 150 ns
Current Fall Time 130 ns
Turn-off Switching Loss 770
Total Switching Loss 1220
VCE = 15 V, IC= 20 A 15 S
= 25V, f = 1 MHz, VGE = 0 2200
V
CE
VCE = 390 V, IC = 20 A,
VGE = 15V,
(see Figure 20)
V
= 480 V , Tj = 150°C
clamp
100 A
225
50
100
16
45
140 nC
pF
pF
pF
nC
nC
RG = 10 Ω, VGE= 15V
= 390 V, IC = 20 A
V
CC
RG=3.3Ω, VGE= 15V, Tj= 25°C
(see Figure 18)
= 390 V, IC = 20 A
V
CC
RG=3.3Ω, VGE= 15V, Tj=
125°C
(see Figure 18)
Vcc = 390 V, IC = 20 A,
31
11
1600
220
300
31
11.5
1500
450
28 ns
ns
ns
A/µs
µJ
ns
ns
A/µs
µJ
RGE = 3.3 Ω , VGE = 15 V
TJ = 25 °C
(see Figure 18)
µJ
µJ
Vcc = 390 V, IC = 20 A,
= 3.3 Ω , VGE = 15 V
R
GE
Tj = 125 °C
(see Figure 18)
66 ns
µJ
µJ
3/11
STGP20NC60V - STGW20NC 60V
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Curre nt
4/11
Figure 8: Normalized Gate Threshold vs Temperature
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