ST STGP14NC60KD, STGF14NC60KD, STGB14NC60KD User Manual

STGP14NC60KD - STGF14NC60KD

1

3

1

3

3

STGB14NC60KD

N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK

SHORT CIRCUIT RATED PowerMESH™ IGBT

Table 1: General Feature s

TYPE V

STGB14NC60KD
STGF14NC60KD
STGP14NC60KD

■ LOWER ON-VOLTAGE DROP (V

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOWER C

■ SWITCHING LOSSES INCLUDE DIODE

RES

CESVCE(sat)

600 V
600 V
600 V

/ C

RATIO

IES

@25°C
< 2.5 V

< 2.5 V
< 2.5 V

(Max)

cesat

IC (#)

@100°C

14 A

7 A

14 A

)

RECOVERY ENERGY

■ VERY SOFT U LTRA F AST REC OVER Y

ANTIPARALLEL DIODE

■ NEW GENERATION PRODUCTS WITH

TIGHTER PARAMETER DISTRUBUTION

DESCRIPTION

Using the latest high voltage technology bas ed on
a patented strip layout, STMicroelectronics has
design ed an adva nced fam ily of IGBT s, the P ow
erMESH™ IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
freque ncy mot or cont rol appl icat ions wi th shor t cir
cuit withstand capability.

APPLICATIONS

■ HIGH FREQUENCY INVERTERS

■ SMPS and PFC IN BOTH HARD SWITCH AND

RESONANT TOPOLOGIES

■ MOTOR DRIVERS

Figure 1: Package

2

TO-220

2

PAK

D

Figure 2: Internal Schematic Diagram

-

-

2

TO-220FP

1

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STGB14NC60KDT4 GB14NC60KD

STGF14NC60KD GF14NC60KD TO-220FP TUBE
STGP14NC60KD GP14NC60KD TO-220 TUBE

D2PAK

TAPE & REEL

Rev.2

1/14July 2005

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

Table 3: Abso lute Ma ximu m ratings

Symbol Parameter Value Unit

STGB14NC60KD
STGP14NC60KD

V

Collector-Emitter Voltage (VGS = 0)

CES

V

Emitter-Collector Voltage 20 V

ECR

V

Gate-Emitter Voltage ±20 V

GE

I

Collector Current (continuous) at TC = 25°C (#)

C

I

Collector Current (continuous) at TC = 100°C (#)

C

I

()

Collector Current (pulsed) 50 A

CM

I

Diode RMS Forward Current at TC = 25°C

F

P

Total Dissipation at TC = 25°C

TOT

25 11 A
14 7 A

80 25 W

Derating Factor 0.64 0.20 W/°C

V

Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) -- 2500 V

ISO

T

Storage Temperature

stg

T

Operating Junction Temperature

j

() Pulse width limited by Max Junction Temperature.

Table 4: Thermal Data

Min. Typ. Max.

Rthj-case Thermal Resistance Junction-case TO-220

D²PAK

TO-220FP 5.0 °C/W

Rthj-amb Thermal Resistance Junction-ambient 62.5 °C/W

T

Maximum Lead Temperature for Soldering

L

Purpose (1.6 mm from case, for 10 sec.)

STGF14NC60KD

600 V

20 A

– 55 to 150 °C

1.56 °C/W

300 °C

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 5: Main Parameters

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

V

V

(#) Calculated according to the iterative formula:

ICTC()

2/14

Collector-Emitter
Breakdown Voltage

I

Collector cut-off Current

CES

(VGE = 0)

I

Gate-Emitter Leakage

GES

Current (VCE = 0)
Gate Threshold Voltage

GE(th)

Collector-Emitter Saturation

CE(sat)

Voltage

T

--------------------------------------------------------------------------------------------------

=

R

THJ C–VCESAT MAX()TCIC

JMAXTC

IC= 1 mA, VGE= 0 600 V

VCE= Max Rating, TC= 25°C
VCE= Max Rating, TC= 125°C

10

1

VGE= ±20V , VCE= 0 ±100 nA

VCE= VGE, IC= 250 µA
VGE= 15V, IC= 7A

VGE= 15V, IC= 7A, Tc= 125°C

–

,()×

5 7 V

2.0

1.8

2.5 V

µA

mA

V

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (1)

C

C

C

Q
Q

t

Forward Transconductance
Input Capacitance

ies

Output Capacitance 86 pF

oes

Reverse Transfer

res

Capacitance

Q

Total Gate Charge

g

Gate-Emitter Charge

ge

Gate-Collector Charge

gc

Short Circuit Withstand Time VCE = 0.5 V

scw

Table 7: Switching On

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

(di/dt)

t

d(on)

(di/dt)

Turn-on Delay Time
Current Rise Time

t

r

Turn-on Current Slope

on

Turn-on Delay Time
Current Rise Time

t

r

Turn-on Current Slope

on

Table 8: Switching Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

tr(V

)

Off Voltage Rise Time

off

td(

tr(V

td(

Turn-off Delay Time

)

off

Current Fall Time

t

f

)

Off Voltage Rise Time

off

Turn-off Delay Time

)

off

Current Fall Time

t

f

VCE = 15 V , IC = 7 A 3 S

VCE = 25 V, f= 1 MHz, VGE = 0

760 pF

15.5 pF

VCE = 390 V, IC = 7 A,
VGE = 15 V
(see Figure 21)

RG = 10 Ω, VGE = 12 V

BR(CES),Tj

= 125°C,

VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 19)

VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 19)

Vcc = 390 V, IC = 7 A,
RGE = 10 Ω , VGE = 15 V
TJ = 25 °C

34.4

8.1

16.4

10 µs

22.5

8.5

700

22

9.5

680

60

116

75

(see Figure 19)
Vcc = 390 V, IC = 7 A,

RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
(see Figure 19)

24
196
144

nC
nC
nC

ns
ns

A/µs

ns
ns

A/µs

ns
ns
ns

ns
ns
ns

Table 9: Switching Energy

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Eon (2)

E

off

E

Eon (2)

E

off

E

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(2) Eon is the turn-on l osses when a typical di ode i s used i n the test ci rcuit in fi gure 2. If the IG BT is o ffered in a pac kage with a co -pack diode ,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3)Turn-off losses include also the tail of the collector current.

Turn-on Switching Losses
Turn-off Switching Losses

(3)

Total Switching Losses

ts

Turn-on Switching Losses
Turn-off Switching Losses

(3)

Total Switching Losses

ts

VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15V, Tj= 25°C
(see Figure 19)

VCC = 390 V, IC = 7 A
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 19)

82
155
237

131
370
501

µJ
µJ
µJ

µJ
µJ
µJ

3/14

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

Table 10: Collector-Emitter Diode

Symbol Parameter Test Condiction Min. Typ. Max. Unit

V

Forward O n-Voltage If = 3.5 A

f

If = 3.5 A, Tj = 125 °C

t

Reverse Recovery Time

rr

t

a

Q

I

Q

I

Reverse Recovery Charge

rr

Reverse Recovery Current

rrm

Softness factor of the diode

S

t

Reverse Recovery Time

rr

t

a

Reverse Recovery Charge

rr

Reverse Recovery Current

rrm

Softness factor of the diode

S

If = 7 A, VR = 40 V,
Tj = 25 °C, di/dt = 100 A/µs

0.68

If = 7 A, VR = 40 V,
Tj = 125 °C, di/dt = 100 A/µs

0.79

1.3

1.1
37

22
40

2.1

61
34
98

3.2

1.9

V
V

ns
ns

nC

A

ns
ns

nC

A

4/14

STGP14NC60KD - STGF14NC60KD - STGB14NC60KD

Figure 3: Output Characteristics

Figure 4: Transconductance

Figure 6: Transf er Characterist ics

Figure 7: Collector-Emitter On Voltage vs Tem­perature

Figure 5: Collector-Emitter On Voltage vs Col­lector Current

Figure 8 : Nor malize d G ate T hresh old v s Te m­perature

5/14