查询STGB12NB60KD供应商
SHORT CIRCUIT PROOF PowerMESH™ IGBT
STGP12NB60KD - STGB12NB60KD
N-CHANNEL 18A - 600V TO-220/D2PAK
TYPE V
STGP12NB60KD
STGB12NB60KD
■ HIGH INPUT IMPEDANCE
■ LOW ON-LOSSES
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAILCURRENT
■ VERY HIGH FREQUENCY OPERATION
■ TYPICAL SHORT CIRCUIT WITHSTAND TIME 10
CES
600 V
600 V
V
CE(sat)
(Max) @25°C
<2.8 V
<2.8 V
IC(#)
@ 100°C
18 A
18 A
MICROS
■ CO-PACKAGED ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STM icr oelectronics has designed an advanced family of IGBTs, the Power-
™
MESH
IGBTs, with outstanding performances. The
suffix “K” identifies a family optimized for hig h frequency applications (up to 50kHz ) and short circuit proof in
order to achieve very highswitching perform anc es (reduced tfall) mantaining a low voltage drop.
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS
■ UP S
3
1
TO-220
3
2
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STGP12NB60KD GP12NB60KD TO-220 TUBE
STGB12NB60KDT4 GB12NB60KD
2
PAK
D
TAPE & REEL
1/11December 2003
STGP12NB60KD - STGB12NB60KD
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
Tsc Short Circuit Withstand 10
P
TOT
T
stg
T
j
() Pulsewidthlimitedbysafeoperatingarea
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.0 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Collector-Emitter Voltage (VGS=0)
600 V
Emitter-Collector Voltage 20 V
Gate-Emitter Voltage ± 20 V
Collector Current (continuous) at TC= 25°C (#)
Collector Current (continuous) at TC= 100°C (#)
()
Collector Current (pulsed) 60 A
Total Dissipation at TC= 25°C
30 A
18 A
125 W
Derating Factor 1.0 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
µs
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown
IC=250µA,VGE= 0 600 V
Voltage
I
CES
I
GES
Collector cut-off
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
V
= Max Rating, TC=25°C
CE
V
= Max Rating, TC= 125 °C
CE
V
= ± 20V , VCE= 0 ±100 nA
GE
50
100
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
V
CE=VGE,IC
VGE= 15V, IC=12A
VGE=15V,IC=12A,Tj=125°C
=250µA
57V
2.2
2.8 V
1.7
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
C
C
C
Q
Q
Q
I
T
Forward Transconductance
fs
Input Capacitance
ies
Output Capacitance
oes
Reverse Transfer Capacitance
res
Total Gate Charge
g
Gate-Emitter Charge
ge
Gate-Collector Charge
gc
Latching Current V
CL
Short Circuit WITHSTAND
wsc
Time
=25V,IC=12A
CE
=25V,f=1MHz,VGE=0
V
CE
VCE=480V,IC=12A,
= 15V
V
GE
= 480 V , VGE=15V,
clamp
Tj = 125°C , RG=10Ω
VCE=0.5BV
ces ,VGE
Tj = 125°C , RG=10Ω
=15V
5S
890
110
22
54
8
31
48 A
10 µs
µA
µA
V
pF
pF
pF
nC
nC
nC
2/11
STGP12NB60KD - STGB12NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
(di/dt)
Eon
Turn-on Delay Time
t
Rise Time 14.5 ns
r
Turn-on Current Slope
on
Turn-on Switching Losses
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
c
tr(V
off
t
d(off
t
f
E
(**)
off
E
ts
t
c
tr(V
off
t
d(off
t
f
E
(**)
off
E
ts
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Cross-over Time
)
Off Voltage Rise Time 25 ns
)
Delay Time 96 ns
Fall Time 100 ns
Turn-off Switching Loss 258 µJ
Total Switching Loss 410 µJ
Cross-over Time
)
Off Voltage Rise Time 80 ns
)
Delay Time 150 ns
Fall Time 220 ns
Turn-off Switching Loss 650 µJ
Total Switching Loss 830 µJ
= 480 V, IC=12A
CC
=10Ω,VGE=15V
R
G
V
= 480 V, IC=12ARG=10Ω
CC
= 15 V,Tj = 125°C
V
GE
V
= 480 V, IC=12A,
cc
RGE=10Ω,VGE=15V
V
= 480 V, IC=12A,
cc
RGE=10Ω,VGE=15V
Tj = 125 °C
25 ns
590 A/µs
180 µJ
130 ns
310 ns
COLLECTOR-EMITTER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
f
I
fm
V
t
rr
Q
I
rrm
(#) Calculated according to the iterative formula:
ICTC()
Forward Current
Forward Current pulsed
Forward On-Voltage If=6A
f
Reverse Recovery Time
Reverse Recovery Charge
rr
Reverse Recovery Current
–
T
--------------------------------------------------------------------------------------
=
R
THJ C–VCESAT MAX()
JMAXTC
T
I
,()×
C
C
If= 6 A, Tj = 125 °C
=6A,VR=50V,
I
f
Tj =125°C, di/dt = 100 A/µs
1.3
1.1
80
240
5.5
12
48
1.9
A
A
V
V
ns
nC
A
3/11
STGP12NB60KD - STGB12NB60KD
Output Characteristics
Transfer Characteristics
Normalized Collecto r-Emitter On V oltage vs Tem p.Transconductance
4/11
Collector-Emitter On Voltage vs Collector CurrentCollector-Emitter On Voltage vs Temperature
STGP12NB60KD - STGB12NB60KD
Gate Threshold vs Temperature
Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter VoltageCapacitance Variations
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
5/11
STGP12NB60KD - STGB12NB60KD
Total Switching Losses vs Collector Current
Turn-Off SOA
Diode Forward Voltage
Thermal Impedance
6/11
STGP12NB60KD - STGB12NB60KD
Fig. 2: Test Circuit For Inductive Load SwitchingFig. 1: Gate Charge test Circuit
7/11
STGP12NB60KD - STGB12NB60KD
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
8/11
STGP12NB60KD - STGB12NB60KD
D2PAK MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 8º
3
9/11
1
STGP12NB60KD - STGB12NB60KD
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ” T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12. 992
B 1. 5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24 .4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1. 574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
10/11
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
STGP12NB60KD - STGB12NB60KD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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11/11
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