ST STGP10NC60KD, STGF10NC60KD, STGB10NC60KD User Manual

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查询STG3684A供应商

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK

STGP10NC60KD - STGF10NC60KD

STGB10NC60KD

SHORT CIRCUIT RATED PowerMESH™ IGBT

Table 1: General Fe a ture s

TYPE V

STGB10NC60KD STGF10NC60KD STGP10NC60KD

■ LOWER ON-VOLTAGE DROP (V

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOWER C

■ SWITCHING LOSSES INCLUDE DIODE

RES

CESVCE(sat)

600 V 600 V 600 V

/ C

RATIO

IES

(Max)

@25°C < 2.5 V

< 2.5 V < 2.5 V

cesat

I

C

@100°C

10 A 6 A 10 A

)

RECOVERY ENERGY

■ VERY SOFT ULTRA FAST RECOVERY

ANTIPARALLEL DIODE

■ NEW GENERATION PRODUCTS WITH

TIGHTER PARAMETER DISTRUBUTION

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Pow

erMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short cir

cuit withstand capab ilit y.

Figure 1: Package

2

TO-220FPTO-220

1

D²PAK

Figure 2: Internal Schematic Diagram

2

APPLICATIONS

■ HIGH FREQUENCY MOTOR CONTROLS

■ SMPS and PFC IN BOTH HARD SWITCH AND

RESONANT TOPOLOGIES

■ MOTOR DRIVERS

Table 2: Order Codes

SALES TYPE MARKING PACKAGE PACKAGING

STGB10NC60KDT4 GB10NC60KD

STGF10NC60KD GF10NC60KD TO-220FP TUBE STGP10NC60KD GP10NC60KD TO-220 TUBE

D²PAK

TAPE & REEL

Rev. 2

1/14July 2005

STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

Table 3: Absolute Maximum ratings

Symbol Parameter Value Unit

I

V V

V

CM

P

CES ECR

I I

TOT

I

Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage 20 V Gate-Emitter Voltage ±20 V

GE

Collector Current (continuous) at TC = 25°C (#)

C

Collector Current (continuous) at TC = 100°C (#)

C

()

Collector Current (pulsed) 40 A Diode RMS Forward Current at TC = 25°C

F

Total Dissipation at TC = 25°C Derating Factor 0.48 0.20 W/°C

V

T

()Pulse wi dth limited by max. jun ct i on temperature.

ISO

stg

T

Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C) -- 2500 V Storage Temperature Operating Junction Temperature

j

STGB10NC60KD STGP10NC60KD

20 9 A 10 6 A

60 25 W

STGF10NC60KD

600 V

10 A

– 55 to 150 °C

Table 4: Thermal Data

Min. Typ. Max.

Rthj-case Thermal Resistance Junctio n-cas e TO-220

D2PAK

2.08 °C/W

TO-220FP 5.0 °C/W

Rthj-amb Thermal Resistance Junctio n-amb ient 62.5 °C/W

T

Maximum Lead Temperature for Soldering

L

300 °C

Purpose (1.6 mm from case, for 10 sec.)

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 5: Main Parameters

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

I

CES

I

GES

V

GE(th)

V

CE(sat)

(#) Calculated according to the iterative formula:

Collector-Emitter Breakdown Voltage

Collector cut-off Current (VGE = 0)

Gate-Emitter Leakage Current (VCE = 0)

Gate Threshold Voltage Collector-Emitter

Saturation Voltage

IC= 1 mA, VGE= 0 600 V

VCE= Max Rating,

10 TC= 25°C VCE=Max Rating,

1

TC= 125°C VGE= ±20V , VCE= 0 ±100 nA

VCE= VGE, IC= 250 µA VGE= 15V, IC= 5A

VGE= 15V, IC= 5A,

5 7 V

2

2.5 V

1.8

Tc= 125°C

µA mA

V

2/14

ICT

()

T

–

--------------------------------------------------------------------------------------------------

=

C

R

THJ C–

JMAXTC

V

CESAT MAX()TCIC

,()×

STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs(1)

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

t

scw

Forward Transconductance Input Capacitance

Output Capacitance Reverse Transfer Capacitance

Total Gate Charge Gate-Emitter Charge Gate-Collector Charge

Short Circuit Withstand Time VCE = 0.5 V

Table 7: Switching On

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

(di/dt)

t

d(on)

t

(di/dt)

r

Turn-on Delay Time Current Rise Time Turn-on Current Slope

on

Turn-on Delay Time Current Rise Time Turn-on Current Slope

on

VCE = 15 V, IC= 5 A 15 S VCE = 25V, f = 1 MHz, VGE = 0 380

46

8.5

VCE = 390 V, IC = 5 A, VGE = 15V, (see Figure 20)

, Tj = 125°C

BR(CES)

10 µs

19

5 9

RG = 10 Ω, VGE = 12V

VCC = 390 V, IC = 5 A RG= 10Ω, VGE= 15V, Tj= 25°C (see Figure 18)

VCC = 390 V, IC = 5 A RG= 10Ω, VGE= 15V, Tj=125°C (see Figure 18)

17

6

655

16.5

6.5

575

pF pF pF

nC nC nC

ns ns

A/µs

ns ns

A/µs

Table 8: Switching Off

Symbol Parameter Test Conditions Min. Typ. Max. Unit

tr(V

)

td(

off

t

f

Off Voltage Rise Time Turn-off Delay Time

)

Current Fall Time

Vcc = 390 V, IC = 5 A, RGE = 10 Ω , VGE = 15 V TJ = 25 °C

33 72 82

ns ns ns

(see Figure 18)

tr(V

)

td(

off

t

f

Off Voltage Rise Time Turn-off Delay Time

)

Current Fall Time

Vcc = 390 V, IC = 5 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C

60 106 136

ns ns ns

(see Figure 18)

Table 9: Switching Energy

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Eon (2)

E

off

E

ts

Eon (2)

E

off

E

ts

(1) Pulsed: Pulse du ration = 300 µ s, duty cycl e 1.5% (2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,

the co-pack diode i s us ed as extern al di ode. IGBTs & DIODE are at the same tem perature (25°C and 125°C) (3)Turn-off los ses include al so the tail of t he collector current.

Turn-on Switching Losses Turn-off Switching Losses

(3)

Total Switching Losses Turn-on Switching Losses

Turn-off Switching Losses

(3)

Total Switching Losses

VCC = 390 V, IC = 75 A RG= 10 Ω, VGE= 15V, Tj= 25°C (see Figure 18)

VCC = 390 V, IC = 5 A RG= 10 Ω, VGE= 15V, Tj= 125°C (see Figure 18)

55 85

140

87 162 249

µJ µJ µJ

3/14

STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

Table 10: Collector-Emitter Diode

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

f

t

rr

Q

rr

I

rrm

t

rr

Q

rr

I

rrm

Forward On-Voltage If = 2.5 A

If = 2.5 A, Tj = 125 °C

Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current

If = 5 A ,VR = 30 V, Tj = 25°C, di/dt = 100 A/μs (see Figure 6)

If = 5 A ,VR = 30 V, Tj =125°C, di/dt = 100 A/μs (see Figure 6)

1.6

1.3

23.5

16.5

1.4 39

39

2

2.1

V V

ns nC

A

ns nC

A

4/14

STGP10NC60KD - STGB10NC60KD - STGF10NC60KD

Figure 3: Output Characteristics

Figure 4: Transconductance

Figure 6: Transfer Characteristics

Figure 7: Collector-Emitter On Voltage vs Temperature

Figure 5: Collector-Emitter On Voltage vs Collector Current

Figure 8: Normalized Gate Threshold vs Temperature

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