查询STGP10NB60S供应商
N-CHANNEL 10A - 600V TO-220
TYPE V
CES
ST G P10NB60S 600 V < 1. 7 V 10 A
■ HIGHINPUT IMPEDANCE
(VOLTAGEDRIVEN)
■ VERYLOWON-VOLTAGEDROP(V
■ HIGHCURRENTCAPABILITY
■ OFFLOSSESINCLUDETAILCURRENT
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix ”S” identifies a family
optimized to achieve minimum on-voltage drop
for low frequencyapplications(<1kHz).
APPLICATIONS
■ LIGHT DIMMER
■ STATICRELAYS
■ MOTORCONTROL
V
CE(sat)
cesat
I
C
)
STGP10NB60S
PowerMESH IGBT
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Value Unit
V
V
V
I
CM
P
T
(•) Pulse width limitedby safe operating area
June 1999
Collect o r -Em i t t er Voltage (VGS= 0) 600 V
CES
Reverse Bat tery Protec t io n 20 V
ECR
Gate-Emitter V oltage
GE
I
Collect o r Current (continuous) at Tc=25oC20A
C
I
Collect o r Current (continuous) at Tc= 100oC10A
C
20 V
±
(•) Collect o r Current (pulsed) 80 A
Tot al Diss i pat ion at Tc=25oC80W
tot
Derat ing Factor 0.64 W/
Sto rage Temperature -65 t o 150
stg
T
Max. O perating Junction T emperature 150
j
o
C
o
C
o
C
1/8
STGP10NB60S
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
1.56
62.5
0.2
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwise specified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
BR(CES)
Collector-Emitter
IC=250µAVGE= 0 600 V
Break dow n V o lt age
V
BR(ECR)
Emitter-Collector
IC = 1 mA VGE=0 20 V
Break dow n V o lt age
I
I
CES
GES
Collect o r cut- off
=0)
(V
GE
Gat e- Em i t t er Leak age
Current (V
CE
=0)
V
=MaxRating Tj=25oC
CE
=MaxRating Tj=125oC
V
CE
V
= ± 20 V VCE=0 ±100 nA
GE
10
100
ON(∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GE(th)
Gate Th reshold
VCE=VGEIC= 250 µA2.55V
Voltage
V
CE(SAT)
Collector-Emitter
Sat urat ion Voltage
VGE=15V IC=5A
=15V IC=10A
V
GE
=15V IC=10A Tj= 125oC
V
GE
1.15
1.35
1.25
1.7
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
C
C
C
g
Q
I
CL
Forward
fs
VCE=25 V IC=10A 5 S
Tr ansc on duc tance
Input Capaci t anc e
ies
Out put Capac it ance
oes
Reverse Tr ansfer
res
VCE=25V f=1MHz VGE= 0 610
65
12
Capacit a nc e
Gat e Charge VCE= 400 V IC=10A VGE= 15 V 33 nC
G
Latc hing C urrent V
=480V RG=1k
clamp
= 150oC
T
j
Ω
20 A
780
85
15
µ
µA
V
V
V
pF
pF
pF
A
SWITCHINGON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
(di/dt)
2/8
t
d(on)
E
Delay T ime
t
Rise Tim e
r
Tur n-on Current S lop e
on
Turn-on
on
Switching Losses
VCC= 480 V IC=10A
=15V RG=1KΩ
V
GE
VCC=480V IC=10A
=1KΩ VGE=15V
R
G
=125oC
T
j
0.7
0.46
8
0.6
s
µ
µs
A/µs
mJ
STGP10NB60S
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGOFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
t
tr(v
E
off
t
tr(v
E
off
(•)Pulse width limited by safe operating area
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Cross-O ver Time
c
Off Voltage Rise Time
)
off
Fall T ime
t
f
(**)
Turn-off Switching Loss
Cross-O ver Time
c
Off Voltage Rise Time
)
off
Fall T ime
t
f
(**)
Turn-off Switching Loss
VCC=480V IC=10A
R
=100
GE
V
CC
R
GE
= 125oC
T
j
Ω
=480V IC=10A
=100
Ω
VGE=15V
VGE=15V
2.2
1.2
1.2
5.0
3.8
1.2
1.9
8.0
µs
µ
µs
mJ
µs
µ
µs
mJ
s
s
ThermalImpedance
3/8
STGP10NB60S
OutputCharacteristics
Transconductance
TransferCharacteristics
Collector-EmitterOn Voltagevs Temperature
Collector-EmitterOn Voltagevs Collector Current
4/8
Gate Thresholdvs Temperature
STGP10NB60S
NormalizedBreakdownVoltage vs Temperature
Gate Chargevs Gate-EmitterVoltage
CapacitanceVariations
OffLosses vs GateResistance
OffLosses vs Temperature
OffLosses vs CollectorCurrent
5/8
STGP10NB60S
SwitchingOff Safe Operatin Area
Fig. 1: Gate Charge test Circuit
Fig. 3: Test CircuitFor Inductive Load Switching
Fig. 2: TestCircuit For InductiveLoad Switching
6/8
TO-220 MECHANICAL DATA
STGP10NB60S
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
P011C
C
D1
L2
Dia.
L5
L7
L6
L9
7/8
STGP10NB60S
Information furnishedis believed to be accurate and reliable.However, STMicroelectronics assumesno responsibilityfor the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice. This publication supersedes and replaces all information previously supplied.STMicroelectronicsproducts
are not authorized for use as critical components in lifesupport devicesor systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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