ST STGIPS35K60L1 User Manual

SLLIMM™ (small low-loss intelligent molded module)

IPM, single phase - 35 A, 600 V short-circuit rugged IGBT

Features

■ IPM 35 A, 600 V single phase IGBT including

control ICs for gate driving and free-wheeling
diodes

■ Short-circuit rugged IGBTs

■ V

■ 3.3 V, 5 V, 15 V CMOS/TTL inputs

comparators with hysteresis and pull down /
pull up resistors

■ Undervoltage lockout

■ Internal bootstrap diode

■ Dead time and interlocking function

■ Smart shutdown function

■ Comparator for fault protection against over

temperature and overcurrent

■ DBC substrate leading to low thermal

resistance

■ Isolation rating of 2500 V

■ 4.7 kΩ NTC for temperature control

■ UL recognition pending (in agreement to

QQQX2.E81734 - Electrically-isolated
semiconductor devices - component)

negative temperature coefficient

CE(sat)

rms

/min

STGIPS35K60L1

Preliminary data

SDIP-22L

Description

This intelligent power module provides a compact,
high performance AC motor drive for a simple and
rugged design. It targets power inverters for air
conditioners. It combines ST proprietary control
ICs with the most advanced short-circuit rugged
IGBT system technology. SLLIMM™ is a
trademark of STMicroelectronics.

Applications

■ Power inverters for compressors

Table 1. Device summary

Order code Marking Package Packaging

STGIPS35K60L1 GIPS35K60L1 SDIP-22L Tube

January 2012 Doc ID 018864 Rev 2 1/21

This is preliminar y information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.

www.st.com

21

Contents STGIPS35K60L1

Contents

1 Internal schematic diagram and pin configuration . . . . . . . . . . . . . . . . 3

2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3.1 Control part . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

3.1.1 NTC thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

3.1.2 Dead time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

3.2 Recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

4 Smart shutdown function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

2/21 Doc ID 018864 Rev 2

STGIPS35K60L1 Internal schematic diagram and pin configuration

1 Internal schematic diagram and pin configuration

Figure 1. Internal schematic diagram

Pin22: P

Pin21: P

Pin19: PHASE

Pin20: PHASE

Pin18 : N

Pin17: N

LVG

CP+

OUT

HVG

Vboot

LIN

SD/OD

VCC

DT

HIN

Pin3: N C

Pin4: T1

Pin2: VBOOT

Pin 1: OUT

Pin5: T2

Pin7: /SD

Pin 6: /LIN

Pin8: H IN

OP+

GND

OPOUT

OP-

Pin10: OP-

Pin9: DT

Pin11: OPOUT

Pin13 : VCC

Pin12: OP+

Pin14: CIN

Pin15: GND

AM09386v2

Pin16: GND

Doc ID 018864 Rev 2 3/21

Internal schematic diagram and pin configuration STGIPS35K60L1

Table 2. Pin description

Pin Symbol Description

1OUT

2V

PHASE

boot

PHASE reference output

Bootstrap voltage

3 NC Not connected

4T

5T

1

2

6LIN

NTC thermistor terminal 1

NTC thermistor terminal 2

Low side logic input

7SD/OD Shutdown logic input (active low) / open drain (comparator output)

8 HIN High side logic input

9 DT Dead time setting

10 OP- Op amp inverting input

11 OP

OUT

Op amp output

12 OP+ Op amp non inverting input

13 V

CC

Low voltage power supply

14 CIN Comparator input

15 GND Ground

16 GND Ground

17 N Negative DC input

18 N Negative DC input

19 PHASE Phase output

20 PHASE Phase output

21 P Positive DC input

22 P Positive DC input

Figure 2. Pin layout (bottom view)

Marking area

4/21 Doc ID 018864 Rev 2

AM06017v1

STGIPS35K60L1 Electrical ratings

2 Electrical ratings

2.1 Absolute maximum ratings

Table 3. Inverter part

Symbol Parameter Value Unit

± I

V

± I

P

CES

CP

TOT

t

scw

Each IGBT collector emitter voltage (VIN = 0) 600 V

Each IGBT continuous collector current

(1)

C

(2)

= 25°C

at T

C

Each IGBT pulsed collector current 70 A

35 A

Each IGBT total dissipation at TC = 25°C 100 W

Short circuit withstand time, VCE = 0.5 V
TJ = 125 °C, VCC = V

= 15 V, VI= 1 "logic state"

boot

(BR)CES

5µs

1. Calculated according to the iterative formula:

ICTC()

------------ ----------------- --------------- ----------------- ----------------- ----------------- --------=

R

thj c–

T

V

CE sat()max()Tjmax()ICTC

–

jmax()TC

(),()×

2. Pulse width limited by max junction temperature

Table 4. Control part

Symbol Parameter Value Unit

V

V

V

V

OUT

CIN

boot

V

Output voltage applied between OUT - GND V

Low voltage power supply -0.3 to +21 V

CC

- 21 to V

boot

boot

Comparator input voltage -0.3 to VCC +0.3 V

Bootstrap voltage applied between V

Logic input voltage applied between HIN, LIN and

IN

GND

- OUT -0.3 to 620 V

boot

-0.3 to 15 V

+ 0.3 V

V

SD/OD

dV

OUT

Table 5. Total system

Open-drain voltage -0.3 to 15 V

/dt Allowed output slew rate 50 V/ns

Symbol Parameter Value Unit

V

ISO

(1)

T

J

T

C

1. The maximum junction temperature rating of the power chips integrated within the SDIP module is 150°C
(@T
limited to T

Isolation withstand voltage applied between each
pin and heatsink plate (AC voltage, t = 60 sec.)

2500 V

Operating junction temperature for IGBT and diode -40 to 150 °C

Module case operation temperature -40 to 125 °C

≤ 100°C). To ensure safe operation of the SDIP module, the average junction temperature should be

C

(avg) ≤ 125°C (@TC ≤ 100°C).

j

Doc ID 018864 Rev 2 5/21

Electrical ratings STGIPS35K60L1

2.2 Thermal data

Table 6. Thermal data

Symbol Parameter Value Unit

R

thJC

Figure 3. Transient thermal impedance IGBT/diode - inverter

Thermal resistance junction-case single diode 2.5 °C/W

10

1

[K/W]

Diode

thj-c

Z

IGBT

0.1

0.01

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

time [s]

Thermal resistance junction-case single IGBT 1.25 °C/W

AM09385v1

6/21 Doc ID 018864 Rev 2

STGIPS35K60L1 Electrical characteristics

3 Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 7. Inverter part

Val ue

Symbol Parameter Test conditions

Min. Typ. Max.

Unit

V

CE(sat)

I

CES

V

Collector-emitter
saturation voltage

Collector-cut off current

(1)

= 0 “logic state”)

(V

IN

Diode forward voltage VIN = 0 "logic state", IF = 30A - 2.5 V

F

Switching on/off (inductive load)

t

t

c(on)

t

t

c(off)

E

E

di/dt

t

t

c(on)

t

t

c(off)

E

E

di/dt

Tu r n - o n t i m e

on

Crossover time (on) - 87 -

Turn-off time - 280 -

off

Crossover time (off) - 130 -

t

Reverse recovery time - 60 -

rr

Turn-on switching losses - 680 -

on

Turn-off switching losses - 760 -

off

Rate of rise of on-state

(on)

current

Tu r n - o n t i m e

on

Crossover time (on) - 110 -

Turn-off time - 410 -

off

Crossover time (off) - 200 -

t

Reverse recovery time - 85 -

rr

Turn-on switching losses - 1025 -

on

Turn-off switching losses - 1400 -

off

Rate of rise of on-state

(on)

current

VCC = V
state", I

V

CC

state", I

V

CE

(1)

V

DD

V

CC

= V

= 410 V,
= V

= 15 V, VIN = 1 "logic

boot

= 30 A

C

= 15 V, VIN = 1 "logic

boot

= 30 A, TJ = 125 °C

C

= 600 V, V

boot

CC

= 15 V,

= V

VIN = 1 "logic state" (see
IC = 30 A (see

Figure 4

VDD = 410 V, VCC = V
V

= 1 "logic state" (see

IN

IC = 70 A (see

V

= 410 V,

DD

VCC = V
V

= 1 "logic state" (see

IN

boot

Figure 4

= 15 V,

IC = 30 A, TJ = 125 °C
(see

Figure 4

= 410 V,

V

DD

VCC = V

boot

and 5)

= 15 V,
VIN = 1 "logic state" (see
I

= 70 A, TJ = 125 °C

C

(see

Figure 4

and 5)

-2.12.7

-1.9

= 15 V - 500 µA

Boot

-440 -

Ta b l e 1 3

)

and 5)

= 15 V,

boot

Ta b l e 1 3

),

-2000 - A/µs

and 5)

-550 -

Ta b l e 1 3

Ta b l e 1 3

)

)

-1750 - A/µs

V

ns

µJ

ns

µJ

1. tON and t
under the internally given gate driving condition. Parameter values take into account a 20 nH stray inductance.

include the propagation delay time of the internal drive. t

OFF

C(ON)

and t

are the switching time of IGBT itself

C(OFF)

Doc ID 018864 Rev 2 7/21