IPM, 3-phase inverter - 10 A, 600 V short-circuit rugged IGBT
Features
■ IPM 10 A, 600 V 3-phase IGBT inverter bridge
including control ICs for gate driving and freewheeling diodes
■ Short-circuit rugged IGBTs
■ V
■ 3.3 V, 5 V, 15 V CMOS/TTL inputs
comparators with hysteresis and pull down /
pull up resistors
■ Undervoltage lockout
■ Internal bootstrap diode
■ Interlocking function
■ Shut down function
■ DBC substrate leading to low thermal
resistance
■ Isolation rating of 2500 Vrms/min
■ 4.7 kΩ NTC for temperature control
negative temperature coefficient
CE(sat)
STGIPS10K60T
SDIP-25L
Applications
■ 3-phase inverters for motor drives
■ Home appliances, such as washing machines,
refrigerators, air conditioners and sewing
machines
Description
This intelligent power module provides a
compact, high performance AC motor drive in a
simple, rugged design. Combining ST proprietary
control ICs with the most advanced short-circuitrugged IGBT system technology, this device is
ideal for 3-phase inverters in applications such as
home appliances and air conditioners. SLLIMM™
is a trademark of STMicroelectronics.
3. Pulse width limited by max junction temperature.
Table 4.Control part
SymbolParameterValueUnit
V
OUT
V
V
boot
V
V
SD/OD
dV
OUT
Output voltage applied between
OUT
OUT
U,
Low voltage power supply-0.3 to +21V
CC
OUTW - GND
V,
Bootstrap voltage applied between
V
- OUTi for i = U, V, W
boot i
Logic input voltage applied between HIN, LIN and
IN
GND
Open drain voltage-0.3 to 15V
/dt Allowed output slew rate50V/ns
- 21 to V
V
boot
boot
-0.3 to 620V
-0.3 to 15V
+ 0.3V
Doc ID 018533 Rev 25/19
Electrical ratingsSTGIPS10K60T
Table 5.Total system
SymbolParameterValueUnit
V
ISO
T
C
T
J
1. The maximum junction temperature rating of the power chips integrated within the SDIP module is 150°C
(@TC ≤ 100°C). To ensure safe operation of the SDIP module, the average junction temperature should be
limited to T
Isolation withstand voltage applied between each
pin and heatsink plate (AC voltage, t = 60 sec.)
Module case operation temperature-40 to 125°C
(1)
Operating junction temperature-40 to 150°C
(avg) ≤ 125°C (@TC ≤ 100°C)
J
2.2 Thermal data
Table 6.Thermal data
SymbolParameterValueUnit
R
thJC
Thermal resistance junction-case single IGBT max.3.8°C/W
Thermal resistance junction-case single diode max.5.5°C/W
2500V
6/19 Doc ID 018533 Rev 2
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