IPM, single phase - 35 A, 1200 V short-circuit rugged IGBT
Features
■ IPM 35 A, 1200 V single phase IGBT including
control ICs for gate driving and free-wheeling
diodes
■ Short-circuit rugged IGBTs
■ V
■ Active Miller clamp feature
■ Undervoltage lockout
■ Desaturation detection
■ Fault status output
■ Input compatible with pulse transformer or
optocoupler
■ DBC substrate leading to low thermal
resistance
■ Isolation rating of 2500 V
■ 4.7 kΩ NTC for temperature control
negative temperature coefficient
CE(sat)
rms
/min
STGIPL35K120L1
Target specification
SDIP-18L
Applications
■ Power inverters
Description
This intelligent power module provides a compact,
high performance AC motor drive for a simple and
rugged design. It targets power inverters for air
conditioners. It combines ST proprietary control
ICs with the most advanced short-circuit rugged
IGBT system technology. SLLIMM™ is a
trademark of STMicroelectronics.
Table 1.Device summary
Order codeMarkingPackagePackaging
STGIPL35K120L1GIPL35K120L1SDIP-18LTube
February 2012Doc ID 022751 Rev 21/19
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
2. Pulse width limited by max junction temperature
Table 4.Control part
SymbolParameterValueUnit
VHMaximum VH-H, VH-L voltages vs. GND28V
V
fault
V
other
Table 5.Total system
Voltage on FAULT pin-0.3 to VH+0.3V
Voltage on other pins (IN, VREF)-0.3 to 7V
SymbolParameterValueUnit
V
ISO
T
J
T
C
1. The maximum junction temperature rating of the power chips integrated within the SDIP module is 150 °C
(@TC ≤ 100 °C). To ensure safe operation of the NDIP module, the average junction temperature should
be limited to T
Isolation withstand voltage applied between each
pin and heatsink plate (AC voltage, t = 60 sec.)
(1)
Operating junction temperature for IGBT and diode-40 to 150°C
2500V
Module case operation temperature-40 to 125°C
≤ 125 °C (@TC ≤ 100 °C).
J(avg)
Doc ID 022751 Rev 25/19
Electrical ratingsSTGIPL35K120L1
2.2 Thermal data
Table 6.Thermal data
SymbolParameterValueUnit
R
thJC
Thermal resistance junction-case single diode1.4°C/W