ST STGF7NB60SL User Manual
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STGF7NB60SL
N-CHANNEL 7A - 600V - TO-220FP
PowerMESH™ IGBT
Table 1: Ge neral Features
TYPE V
STGF7NB60SL 600 V < 1.6 V 7 A
■ POLYSILICON GATE VOLTAGE DRIVEN
■ LOW THRESHOLD VOLTAGE
■ LOW ON -VOL TAGE DR OP
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
CESVCE(sat)
(Max)
@25°C
I
C
@100°C
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH
™
IGBTs, with outstanding performances.
The suffix “S” identifies a family optimized achieve
minimum on-voltage drop for lo w freq uency appl ications (<1kHz).
APPLICATIONS
■ LIGHT DIMMER
■ STATIC RELAYS
Figure 1: Package
3
2
1
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
SALES TYPE MARKING PACKAGE PACKAGING
STGF7NB60SL GF7NB60SL TO-220FP TUBE
Rev.3
1/9September 2004
STGF7NB60SL
Table 3: Absolute Maximum ratings
Symbol Parameter Value Symbol
V
CES
V
ECR
V
GE
I
C
I
C
I
(1)
CM
P
TOT
V
ISO
T
stg
T
j
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max 5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Collector-Emitter Voltage (VGS = 0)
600
Reverse Battery Protection 20
Gate-Emitter Voltage ± 20
Collector Current (continuous) at 25°C15
Collector Current (continuous) at 100°C7
Collector Current (pulsed) 20 A
Total Dissipation at TC = 25°C
25
Derating Factor 0.2 W/°C
Insulation Withstand Voltage A.C. 2500
Storage Temperature
Operating Junction Temperature
– 55 to 150 °C
V
V
V
A
A
W
V
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collectro-Emitter Breakdown
IC = 250 µA, VGE = 0 600 V
Voltage
V
BR(ECS)
Emitter-Collector Breakdown
IC = 1mA, VGE = 0 20 V
Voltage
I
CES
I
GES
Collector-Em itter Leak age
Current (V
CE
= 0)
Gate-Emitter Leakage
Current (V
CE
= 0)
V
= Max Rating
GE
Tc=25°C
Tc=125°C
V
= ± 20 V , VCE = 0 ±100 nA
GE
10
100
Table 6: On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(SAT)
Gate Threshold Voltage VCE= VGE, IC= 250 µA 1.2 2.4 V
Collector-Em itter Satur ation
Voltage
VGE=4.5 V, IC= 7A, Tj= 25°C
VGE=4.5 V, IC= 7A, Tj= 125°C
1.2
1.1
1.6
µA
µA
V
V
2/9
STGF7NB60SL
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
I
CL
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-Off SOA Minimum
Current
tscw Short Circuit Withstand Time V
Table 8: Switching On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
E
r
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
Table 9: Switching Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
c
tr(V
off
td(
off
t
f
E
(**)
off
t
c
t
r(Voff
td(
off
t
f
E
(**)
off
(**)Turn-off loss es include al so the tail of the collector current.
Cross-over Time
)
Off Voltage Rise Time 1.6 µs
)
Delay Time 5.2 µs
Current Fall Time 1.1 µs
Turn-off Switching Loss 4.1
Cross-over Time
)
Off Voltage Rise Time 2.4 µs
)
Delay Time 6.4 µs
Fall Time 1.7 µs
Turn-off Switching Loss 7.1
= 15 V, IC= 7 A 5 S
CE
= 25V, f = 1 MHz, VGE = 0 800
V
CE
60
10
VCE = 480V, IC = 7 A,
VGE = 5V
(see Figure 20)
V
= 480 V , Tj = 125°C
clamp
20 A
16
2.5
8.5
22 nC
RG = 1 KΩ, VGE=5V
= 0.5 V
ce
BR(CES)
, VGE=5V,
14 µs
Tj = 125°C , RG = 1KΩ
VCC = 480 V, IC = 7 A RG=1KΩ ,
V
= 5 V
GE
1.1
0.25
(see Figure 18)
= 480 V, IC = 7 A RG=1KΩ
V
CC
VGE = 5 V,Tj = 125°C
V
= 480 V, IC = 7 A,
cc
45
2.7
2.7 µs
RGE = 1KΩ , VGE = 5 V
(see Figure 18)
V
= 480 V, IC = 7 A,
cc
R
= 1KΩ , VGE = 5 V
GE
4.4 µs
Tj = 125 °C
(see Figure 18)
pF
pF
pF
nC
nC
µs
µs
A/µs
mJ
mJ
mJ
3/9
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