ST STGP3NB60F, STGD3NB60F, STGP3NB60FD, STGF3NB60FD, STGB3NB60FD User Manual

STGB3NB60FD

STGP3NB60F - STGD3NB60F

STGP3NB60FD-STGF3NB60FD-STGB3NB60FD

N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK

PowerMESH™ IGBT

	TYPE	VCES	VCE(sat)	IC
			(Typ) @125°C @125°C
	STGP3NB60F	600 V	< 2.4 V	3 A
	STGD3NB60F	600 V	< 2.4 V	3 A
	STGP3NB60FD	600 V	< 2.4 V	3 A	3	3
	STGF3NB60FD	600 V	< 2.4 V	3 A	2	2
					1	1
	STGB3NB60FD	600 V	< 2.4 V	3 A	TO-220	TO-220FP
■	HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
■	LOW ON-VOLTAGE DROP (Vcesat)
■	LOW GATE CHARGE					3
■	HIGH CURRENT CAPABILITY				1
						1
					3
■	OFF LOSSES INCLUDE TAIL CURRENT				D2PAK	DPAK

■HIGH FREQUENCY OPERATION

■SHORT CIRCUIT RATED

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “F” identifies a family optimized to achieve very low switching times for frequency applications (<40 KHz)

APPLICATIONS

■MOTOR CONTROLS

■SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES

INTERNAL SCHEMATIC DIAGRAM

Std. Version

“D” Version

ORDERING INFORMATION

SALES TYPE	MARKING	PACKAGE	PACKAGING
STGP3NB60F	GP3NB60F	TO-220	TUBE
STGD3NB60FT4	GD3NB60F	DPAK	TAPE & REEL
STGP3NB60FD	GP3NB60FD	TO-220	TUBE
STGF3NB60FD	GF3NB60FD	TO-220FP	TUBE
STGB3NB60FDT4	GB3NB60FD	D2PAK	TAPE & REEL

June 2003

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STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter			Value		Unit
		TO-220/D2PAK		TO-220FP	DPAK
VCES	Collector-Emitter Voltage (VGS = 0)		600			V
VECR	Emitter-Collector Voltage		20			V
VGE	Gate-Emitter Voltage		±20			V
IC	Collector Current (continuous) at TC = 25°C		6			A
IC	Collector Current (continuous) at TC = 100°C		3			A
ICM ( )	Collector Current (pulsed)		24			A
If (1)	Forward Current		3			A
Ifm (1)	Forward Current Pulsed		24			A
PTOT	Total Dissipation at TC = 25°C	68		25	60	W
	Derating Factor	0.55		0.2	0.47	W/°C
VISO	Insulation Withstand Voltage A.C.	--		2500	--	V
Tstg	Storage Temperature		– 55 to 150			°C
Tj	Max. Operating Junction Temperature		150			°C

( ) Pulse width limited by safe operating area

(1) For “D” version only

THERMAL DATA

		TO-220/D2PAK		TO-220FP	DPAK
Rthj-case	Thermal Resistance Junction-case Max	1.8		5	2.1	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max	62.5			100	°C/W
Rthc-h	Thermal Resistance Case-heatsink Typ			0.5		°C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25°C UNLESS OTHERWISE SPECIFIED)

MAIN PARAMETERS

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VBR(CES)	Collector-Emitter Breakdown	IC = 250 µA, VGE = 0	600			V
	Voltage
ICES	Collector cut-off	VCE = Max Rating, TC = 25°C			50	µA
	(VGE = 0)	VCE = Max Rating, TC = 125°C			100	µA
IGES	Gate-Emitter Leakage	VGE = ±20V , VCE = 0			±100	nA
	Current (VCE = 0)
VGE(th)	Gate Threshold Voltage	VCE = VGE, IC = 250 µA	3		5	V
VCE(sat)	Collector-Emitter Saturation	VGE = 15 V, IC = 3 A		1.9	2.4	V
	Voltage	VGE = 15 V, IC = 3 A, Tj =125°C		1.6		V

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STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD

SWITCHING PARAMETERS

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs	Forward Transconductance	VCE = 25 V, Ic = 3 A		2		S
Cies	Input Capacitance	VCE = 25 V, f = 1 MHz, VGE = 0		230		pF
Coes	Output Capacitance			33		pF
Cres	Reverse Transfer			6		pF
	Capacitance
Qg	Total Gate Charge	VCE = 480 V, IC = 3 A,		16	20	nC
Qge	Gate-Emitter Charge	VGE = 15 V		1.5		nC
Qgc	Gate-Collector Charge			8		nC
td(on)	Turn-on Delay Time	VCC = 480 V, IC = 3 A		12.5		ns
tr	Rise Time	RG = 10Ω, VGE = 15 V		4		ns
(di/dt)on	Turn-on Current Slope	VCC= 480 V, IC = 3 A RG=10Ω		840		A/µs
Eon	Turn-on Switching Losses	VGE = 15 V,Tj = 125°C		31		μJ
tc	Cross-over Time	Vcc = 480 V, IC = 3 A,		220		ns
tr(Voff)	Off Voltage Rise Time	RGE = 10 Ω , VGE = 15 V		60		ns
td(off)	Delay Time	Tj = 25 °C		105		ns
tf	Fall Time			150		ns
Eoff(**)	Turn-off Switching Loss			125		μJ
Ets	Total Switching Loss			149		μJ
tc	Cross-over Time	Vcc = 480 V, IC = 3 A,		490		ns
tr(Voff)	Off Voltage Rise Time	RGE = 10 Ω , VGE = 15 V		174		ns
td(off)	Delay Time	Tj = 125 °C		230		ns
tf	Fall Time			305		ns
Eoff(**)	Turn-off Switching Loss			295		μJ
Ets	Total Switching Loss			326		μJ

COLLECTOR-EMITTER DIODE (“D” VERSION)

Symbol	Parameter		Test Conditions	Min.	Typ.	Max.	Unit
Vf	Forward On-Voltage	If = 1.5	A		1.31	1.8	V
		If = 1.5	A, Tj = 125 °C		0.95		V
trr	Reverse Recovery Time	If = 3 A ,VR = 35 V,			45		ns
Qrr	Reverse Recovery Charge	Tj =125°C, di/dt = 100 A/ μs			70		nC
Irrm	Reverse Recovery Current				2.7		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization)

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STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD

Output Characteristics		Transfer Characteristics

Transconductance	Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current	Normalized Collector-Emitter On Voltage vs Temp.

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STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD

Gate Threshold vs Temperature

Normalized Breakdown Voltage vs Temperature

Capacitance Variations

Gate Charge vs Gate-Emitter Voltage

Total Switching Losses vs Gate Resistance

Total Switching Losses vs Temperature

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