ST STGF20NB60S User Manual
STGF20NB60S
STGF20NB60S
N-CHANNEL 13A - 600V TO-220FP
PowerMESH™ IGBT
Table 1: General Features
TYPE |
VCES |
VCE(sat) (Max) |
IC |
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|
@25°C |
@100°C |
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STGF20NB60S |
600 V |
< 1.7 V |
13 A |
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LOW ON-VOLTAGE DROP (Vcesat)
HIGHT CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “S” identifies a family optimized to achieve minimum on-voltage drop for low frequency to applications (<1kHz).
APPLICATIONS
LIGHT DIMMER
STATIC RELAYS
MOTOR CONTROL
Figure 1: Package
3
2
1
TO-220FP
Figure 2: Internal Schematic Diagram
Table 2: Order Code
PART NUMBER |
MARKING |
PACKAGE |
PACKAGING |
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STGF20NB60S |
GF20NB60S |
TO-220FP |
TUBE |
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Rev. 2
February 2005 |
1/10 |
STGF20NB60S
Table 3: Absolute Maximum ratings
Symbol |
Parameter |
Value |
Unit |
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|
|
|
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|
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V |
|
VECR |
Emitter-Collector Voltage |
20 |
V |
|
VGE |
Gate-Emitter Voltage |
±20 |
V |
|
IC |
Collector Current (continuous) at TC = 25°C (#) |
24 |
A |
|
IC |
Collector Current (continuous) at TC = 100°C (#) |
13 |
A |
|
ICM ( ) |
Collector Current (pulsed) |
70 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
40 |
W |
|
|
Derating Factor |
0.32 |
W/°C |
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VISO |
Insulation withstand voltage AC (t=1sec, Tc=25°C) |
2500 |
V |
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|
|
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Tstg |
Storage Temperature |
–55 to 150 |
°C |
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Tj |
Operating Junction Temperature range |
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( ) Pulse width limited by safe operating area
Table 4: Thermal Data
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|
Min. |
Typ. |
Max. |
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Rthj-case |
Thermal Resistance Junction-case |
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|
3.15 |
°C/W |
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Rthj-amb |
Thermal Resistance Junction-ambient |
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|
62.5 |
°C/W |
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TL |
Maximum Lead Temperature for Soldering Purpose (1.6 mm |
|
300 |
|
°C |
|
from case, for 10 sec.) |
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ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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|
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|
|
|
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VBR(CES) |
Collector-Emitter Breakdown |
IC = 250 µA, VGE = 0 |
600 |
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|
V |
|
Voltage |
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VBR(ECS) |
Emitter-Collector Breakdown |
IC = 1mA, VGE = 0 |
20 |
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|
V |
|
Voltage |
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ICES |
Collector cut-off Current |
VCE = Max Rating, TC = 25 °C |
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|
10 |
µA |
|
(VGE = 0) |
VCE = Max Rating, TC = 125 °C |
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|
100 |
µA |
IGES |
Gate-Emitter Leakage |
VGE = ± 20V , V CE = 0 |
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|
±100 |
nA |
|
Current (VCE = 0) |
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VGE(th) |
Gate Threshold Voltage |
VCE = VGE, IC = 250 µA |
2.5 |
|
5 |
V |
VCE(sat) |
Collector-Emitter Saturation |
VGE = 15V, IC = 20 A, Tj= 25°C |
|
1.25 |
1.7 |
V |
|
Voltage |
VGE = 15V, IC = 20A, Tj=150°C |
|
1.2 |
|
V |
(#) Calculated according to the iterative formula:
IC( TC) |
= |
TJ MAX – TC |
|
×-----V-----C----E----S-----AT--------(---M-----A-----X----)---(T-------C---,---I--C----) |
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|
RTHJ – C |
2/10
STGF20NB60S
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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|
|
|
|
|
|
gfs (1) |
Forward Transconductance |
VCE = 10 V , IC = 8 A |
|
20 |
|
S |
Cies |
Input Capacitance |
VCE = 25 V, f= 1 MHz, VGE = 0 |
|
1820 |
|
pF |
Coes |
Output Capacitance |
|
|
167 |
|
pF |
Cres |
Reverse Transfer |
|
|
27 |
|
pF |
|
Capacitance |
|
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Qg |
Total Gate Charge |
VCC = 480 V, IC = 20 A, |
|
83 |
115 |
nC |
Qge |
Gate-Emitter Charge |
VGE = 15 V |
|
10 |
|
nC |
Qgc |
Gate-Collector Charge |
(see Figure 19) |
|
27 |
|
nC |
|
|
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ICL |
Turn-off SOA minimum |
Vclamp = 480 V , Tj = 125°C |
80 |
|
|
A |
|
current |
RG = 100 Ω |
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|
(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
td(on) |
Turn-on Delay Time |
VCC = 480 V, IC = 20 A |
|
92 |
|
ns |
tr |
Current Rise Time |
RG= 100 Ω , VGE= 15V |
|
70 |
|
ns |
(di/dt)on |
Turn-on Current Slope |
(see Figure 17) |
|
340 |
|
A/µs |
td(on) |
Turn-on Delay Time |
VCC = 480 V, IC = 20 A |
|
80 |
|
ns |
tr |
Current Rise Time |
RG= 100 Ω , VGE= 15V, |
|
73 |
|
ns |
(di/dt)on |
Turn-on Delay Time |
Tj= 125°C (see Figure 17) |
|
320 |
|
A/µs |
Table 8: Switching Off
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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|
|
|
|
|
|
tc |
Cross-over Time |
Vcc = 480 V, IC = 20 A, |
|
1.6 |
|
µs |
tr(Voff) |
Off Voltage Rise Time |
RG = 100 Ω , VGE = 15 V |
|
0.78 |
|
µs |
TJ = 25 °C |
|
|
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td(off) |
Turn-off Delay Time |
|
1.1 |
|
µs |
|
(see Figure 17) |
|
|
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tf |
Current Fall Time |
|
|
0.79 |
|
µs |
tc |
Cross-over Time |
Vcc = 480 V, IC = 20 A, |
|
2.4 |
|
µs |
tr(Voff) |
Off Voltage Rise Time |
RG = 100 Ω , VGE = 15 V |
|
1.1 |
|
µs |
Tj = 125 °C |
|
|
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td(off) |
Turn-off Delay Time |
|
2.4 |
|
µs |
|
(see Figure 17) |
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|
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tf |
Current Fall Time |
|
|
1.2 |
|
µs |
|
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|
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Table 9: Switching Energy
Symbol |
Parameterr |
Test Conditions |
Min. |
Typ. |
Max |
Unit |
|
|
|
|
|
|
|
Eon (2) |
Turn-on Switching Losses |
VCC = 480 V, IC = 20 A |
|
0.84 |
|
mJ |
Eoff (3) |
Turn-off Switching Loss |
RG= 100 Ω , VGE= 15V, |
|
7.4 |
|
mJ |
Ets |
Total Switching Loss |
(see Figure 18) |
|
8.24 |
|
mJ |
Eon (2) |
Turn-on Switching Losses |
VCC = 480 V, IC = 20 A |
|
0.86 |
|
mJ |
Eoff (3) |
Turn-off Switching Loss |
RG= 100 Ω , VGE=15V,Tj=125°C |
|
11.5 |
|
mJ |
Ets |
Total Switching Loss |
(see Figure 18) |
|
12.4 |
|
mJ |
(2)Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode.
(3)Turn-off losses include also the tail of the collector current.
3/10
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