ST STGP10NC60KD, STGF10NC60KD, STGB10NC60KD User Manual

STG3684A

STGP10NC60KD - STGF10NC60KD

STGB10NC60KD

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK

SHORT CIRCUIT RATED PowerMESH™ IGBT

Table 1: General Features

TYPE	VCES	VCE(sat) (Max)	IC
		@25°C	@100°C
STGB10NC60KD	600 V	< 2.5 V	10 A
STGF10NC60KD	600 V	< 2.5 V	6 A
STGP10NC60KD	600 V	< 2.5 V	10 A

■LOWER ON-VOLTAGE DROP (Vcesat)

■OFF LOSSES INCLUDE TAIL CURRENT

■LOWER CRES / CIES RATIO

■SWITCHING LOSSES INCLUDE DIODE RECOVERY ENERGY

■VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE

■NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTION

DESCRIPTION

Figure 1: Package

3	3
2	2
1	1
TO-220	TO-220FP
	3
	1
	D²PAK

Figure 2: Internal Schematic Diagram

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability.

APPLICATIONS

■ HIGH FREQUENCY MOTOR CONTROLS

■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

■ MOTOR DRIVERS

Table 2: Order Codes

SALES TYPE	MARKING	PACKAGE	PACKAGING
STGB10NC60KDT4	GB10NC60KD	D²PAK	TAPE & REEL
STGF10NC60KD	GF10NC60KD	TO-220FP	TUBE
STGP10NC60KD	GP10NC60KD	TO-220	TUBE

Rev. 2

July 2005

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Table 3: Absolute Maximum ratings

Symbol	Parameter	Value				Unit
		STGB10NC60KD		STGF10NC60KD
		STGP10NC60KD
VCES	Collector-Emitter Voltage (VGS = 0)	600				V
VECR	Emitter-Collector Voltage	20				V
VGE	Gate-Emitter Voltage	±20				V
IC	Collector Current (continuous) at TC = 25°C (#)	20			9	A
IC	Collector Current (continuous) at TC = 100°C (#)	10			6	A
ICM ( )	Collector Current (pulsed)	40				A
IF	Diode RMS Forward Current at TC = 25°C	10				A
PTOT	Total Dissipation at TC = 25°C	60			25	W
	Derating Factor	0.48			0.20	W/°C
VISO	Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)	--			2500	V
Tstg	Storage Temperature	– 55 to 150				°C
Tj	Operating Junction Temperature

( )Pulse width limited by max. junction temperature.

Table 4: Thermal Data

			Min.	Typ.	Max.
Rthj-case	Thermal Resistance Junction-case	TO-220			2.08	°C/W
		D2PAK
		TO-220FP			5.0	°C/W
Rthj-amb	Thermal Resistance Junction-ambient				62.5	°C/W
TL	Maximum Lead Temperature for Soldering			300		°C
	Purpose (1.6 mm from case, for 10 sec.)

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: Main Parameters

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VBR(CES)	Collector-Emitter	IC= 1 mA, VGE= 0	600			V
	Breakdown Voltage
ICES	Collector cut-off Current	VCE= Max Rating,			10	µA
	(VGE = 0)	TC= 25°C			1	mA
		VCE=Max Rating,
		TC= 125°C
IGES	Gate-Emitter Leakage	VGE= ±20V , VCE= 0			±100	nA
	Current (VCE = 0)
VGE(th)	Gate Threshold Voltage	VCE= VGE, IC= 250 µA	5		7	V
VCE(sat)	Collector-Emitter	VGE= 15V, IC= 5A		2	2.5	V
	Saturation Voltage	VGE= 15V, IC= 5A,		1.8		V
		Tc= 125°C

(#) Calculated according to the iterative formula:

	IC	(TC) =	TJMAX – TC
			× VCESAT(MAX)(TC, IC)
		RTHJ – C

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ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 6: Dynamic

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs(1)	Forward Transconductance	VCE = 15 V, IC= 5 A		15		S
Cies	Input Capacitance	VCE = 25V, f = 1 MHz, VGE = 0		380		pF
Coes	Output Capacitance			46		pF
Cres	Reverse Transfer			8.5		pF
	Capacitance
Qg	Total Gate Charge	VCE = 390 V, IC = 5 A,		19		nC
Qge	Gate-Emitter Charge	VGE = 15V,		5		nC
Qgc	Gate-Collector Charge	(see Figure 20)		9		nC
tscw	Short Circuit Withstand Time	VCE = 0.5 VBR(CES) , Tj = 125°C	10			µs
		RG = 10 Ω, VGE = 12V

Table 7: Switching On

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VCC = 390 V, IC = 5 A		17		ns
tr	Current Rise Time	RG= 10Ω, VGE= 15V, Tj= 25°C		6		ns
(di/dt)on	Turn-on Current Slope	(see Figure 18)		655		A/µs
td(on)	Turn-on Delay Time	VCC = 390 V, IC = 5 A		16.5		ns
tr	Current Rise Time	RG= 10Ω, VGE= 15V, Tj=125°C		6.5		ns
(di/dt)on	Turn-on Current Slope	(see Figure 18)		575		A/µs

Table 8: Switching Off

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
tr(Voff)	Off Voltage Rise Time	Vcc = 390 V, IC = 5 A,		33		ns
td(off)	Turn-off Delay Time	RGE = 10 Ω , VGE = 15 V		72		ns
tf	Current Fall Time	TJ = 25 °C		82		ns
		(see Figure 18)
tr(Voff)	Off Voltage Rise Time	Vcc = 390 V, IC = 5 A,		60		ns
td(off)	Turn-off Delay Time	RGE = 10 Ω , VGE = 15 V		106		ns
tf	Current Fall Time	Tj = 125 °C		136		ns
		(see Figure 18)

Table 9: Switching Energy

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
Eon (2)	Turn-on Switching Losses	VCC = 390	V, IC = 75 A		55		µJ
Eoff (3)	Turn-off Switching Losses	RG= 10 Ω, VGE= 15V, Tj= 25°C			85		µJ
Ets	Total Switching Losses	(see Figure 18)			140		µJ
Eon (2)	Turn-on Switching Losses	VCC = 390	V, IC = 5 A		87		µJ
Eoff (3)	Turn-off Switching Losses	RG= 10 Ω, VGE= 15V, Tj= 125°C			162		µJ
Ets	Total Switching Losses	(see Figure 18)			249		µJ

(1)Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

(2)Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)

(3)Turn-off losses include also the tail of the collector current.

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Table 10: Collector-Emitter Diode

Symbol	Parameter		Test Conditions	Min.	Typ.	Max.	Unit
Vf	Forward On-Voltage	If = 2.5	A		1.6	2.1	V
		If = 2.5	A, Tj = 125 °C		1.3		V
trr	Reverse Recovery Time	If = 5 A ,VR = 30 V,			23.5		ns
Qrr	Reverse Recovery Charge	Tj = 25°C, di/dt = 100 A/μs			16.5		nC
Irrm	Reverse Recovery Current	(see Figure 6)			1.4		A
trr	Reverse Recovery Time	If = 5 A ,VR = 30 V,			39		ns
Qrr	Reverse Recovery Charge	Tj =125°C, di/dt = 100 A/μs			39		nC
Irrm	Reverse Recovery Current	(see Figure 6)			2		A

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Figure 3: Output Characteristics

Figure 4: Transconductance

Figure 5: Collector-Emitter On Voltage vs Collector Current

Figure 6: Transfer Characteristics

Figure 7: Collector-Emitter On Voltage vs Temperature

Figure 8: Normalized Gate Threshold vs Temperature

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