ST STGF10NB60SD User Manual

STGF10NB60SD

STGF10NB60SD

N-CHANNEL 10A - 600V TO-220FP

PowerMESH™ IGBT

TYPE	VCES	VCE(sat) (Max)	IC
		@25°C	@100°C
STGF10NB60SD	600	< 1.8 V	10 A

■HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN)

■LOW ON-VOLTAGE DROP

■HIGH CURRENT CAPABILITY

■OFF LOSSES INCLUDE TAIL CURRENT

■CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).

APPLICATIONS

■LIGHT DIMMER

■STATIC RELAYS

■MOTOR CONTROL

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600	V
VECR	Reverse Battery Protection	20	V
VGE	Gate-Emitter Voltage	± 20	V
IC	Collector Current (continuous) at TC = 25°C	20	A
IC	Collector Current (continuous) at TC = 100°C	10	A
ICM (●)	Collector Current (pulsed)	80	A
PTOT	Total Dissipation at TC = 25°C	25	W
	Derating Factor	0.2	W/°C
VISO	Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)	2500	V
Tstg	Storage Temperature	–65 to 150	°C
Tj	Max. Operating Junction Temperature	150	°C

(●) Pulse width limited by safe operating area

June 2003

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STGF10NB60SD

THERMAL DATA

Rthj-case	Thermal Resistance Junction-case Max	5	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max	62.5	°C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VBR(CES)	Collector-Emitter Break-down	IC = 250 µA, VGE = 0,	600			V
	Voltage
VBR(CES)	Emitter Collector Break-down	IC = 1 mA, VGE = 0,	20			V
	Voltage
ICES	Collector cut-off Current	VCE = Max Rating ,Tj =25 °C			10	µA
	(VGE = 0)	VCE = Max Rating ,Tj =125 °C			100	µA
IGES	Gate-Emitter Leakage	VGE = ± 20V , VCE = 0			± 100	nA
	Current (VCE = 0)

ON (1)

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
VGE(th)	Gate Threshold Voltage	VCE = VGE, IC = 250µA		2.5		5	V
VCE(SAT)	Collector-Emitter Saturation	VGE =15V, IC = 5 A, Tj= 25°C			1.15		V
	Voltage	VGE =15V, IC = 10	A, Tj= 25°C		1.35	1.8	V
		VGE =15V, IC = 10	A, Tj= 125°C		1.25		V

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs	Forward Transconductance	VCE = 25 V , IC =10 A	5			S
Cies	Input Capacitance			610		pF
Coes	Output Capacitance	VCE = 25V, f = 1 MHz, VGE = 0		65		pF
Cres	Reverse Transfer			12		pF
	Capacitance
Qg	Gate Charge	VCE = 400V, IC = 10 A,		33		nC
		VGE = 15V
ICL	Latching Current	Vclamp= 480V, RG= 1kΩ,	20			A
		Tj= 125°C

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STGF10NB60SD

SWITCHING ON

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VCC = 480 V, IC = 10 A		0.7		µs
tr	Rise Time	RG = 1KΩ , VGE = 15 V		0.46		µs
(di/dt)on	Turn-on Current Slope	VCC= 480 V, IC = 10 A		8		A/µs
Eon	Turn-on Switching Losses	Ω		0.6		mJ
		RG=1K , VGE = 15 V

SWITCHING OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
tc	Cross-over Time	Vclamp = 480 V, IC = 10 A,		2.2		µs
tr(Voff)	Off Voltage Rise Time	RGE = 1K Ω , VGE = 15 V		1.2		µs
tf	Fall Time			1.2		µs
Eoff(**)	Turn-off Switching Loss			5.0		mJ
tc	Cross-over Time	Vclamp = 480 V, IC = 10 A,		3.8		µs
tr(Voff)	Off Voltage Rise Time	RGE = 1KΩ , VGE = 15 V		1.2		µs
		Tj = 125 °C
tf	Fall Time			1.9		µs
Eoff(**)	Turn-off Switching Loss			8.0		mJ

COLLECTOR-EMITTER DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

If

Forward Current

7

A

Ifm

Forward Current pulsed

56

A

Vf

Forward On-Voltage

If = 3.5 A

1.4

1.9

V

If = 3.5 A, Tj = 125 °C

1.15

V

trr

Reverse Recovery Time

If = 7 A ,VR = 20 V,

50

ns

Qrr

Reverse Recovery Charge

Tj =125°C, di/dt = 100A/ μs

70

nC

Irrm

Reverse Recovery Current

2.7

A

(●)Pulsed: Pulse

duration = 300 µs, duty cycle 1.5 %.

(1)Pulse width limited by max. junction temperature.

(**)Losses Include Also the Tail

Switching Off Safe Operating Area

Thermal Impedance

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