ST STGE50NB60HD User Manual

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

N-CHANNEL 50A - 600V ISOTOP

TYPE V

CES

ST G E50NB60HD 600 V < 2.8 V 50 A

■ HIGHINPUTIMPEDANCE

(VOLTAGEDRIVEN)

■ LOW ON-VOLTAGEDROP(V

■ LOW GATE CHARGE

■ HIGHCURRENT CAPABILITY

■ VERYHIGH FREQUENCY OPERATION

■ OFFLOSSES INCLUDE TAIL CURRENT

■ CO-PACKAGEDWITH TURBOSWITCH

ANTIPARALLELDIODE

DESCRIPTION

Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH

IGBTs, with outstanding



perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).

V

CE(sat)

CESAT

I

C

)

STGE50NB60HD

PowerMESH IGBT

PRELIMINARY DATA

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■ HIGHFREQUENCYMOTORCONTROLS

■ WELDINGEQUIPMENTS

■ SMPSAND PFC IN BOTH HARD SWITCH

AND RESONANTTOPOLOGIES

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

I

CM

P

T

(•) Pulse width limited by safe operating area

Collect o r -Em i t t er Volt age (VGS= 0) 600 V

CES

Gate-Emitter Voltage ± 20 V

GE

I

Collect o r Current (con t inuous) at Tc=25oC 100 A

C

I

Collect o r Current (con t inuous) at Tc= 100oC50A

C

(•) Collecto r Current (pul s ed) 400 A

Tot al Dis sipation at Tc=25oC 300 W

tot

Derat ing Fact or 2.4 W/
Sto rage Temper at ur e -65 t o 15 0

stg

T

Max. O per a t ing J unction Temperat ure 150

j

o

C

o

C

o

C

June 1999

1/6

STGE50NB60HD

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-h

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-heatsink Typ

0.416
30

0.1

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

j

OFF

Sym bol Param e t er Test Condit ion s Min . Typ. Max. U nit

V

BR(CES)

Collector-Emitter

IC=250µAVGE= 0 600 V

Break dow n Voltage

I

I

ON (∗

CES

GES

Collect o r cut-off

=0)

(V

GE

Gat e- Em i t t er Lea kage
Current (V

)

CE

=0)

V

=MaxRating Tj=25oC

CE

=MaxRating Tj=125oC

V

CE

V

= ± 20 V VCE=0 ±100 nA

GE

100

1000

Sym bol Param e t er Test Condit ion s Min . Typ. Max. U nit

V

GE(th)

Gate Threshold

VCE=VGEIC= 250 µA35V

Voltage

V

CE(SAT)

Collector-Emitter
Sat urat ion Voltage

VGE=15V IC=50A
V

=15V IC=50A Tj= 125oC

GE

2.3

1.9

2.8 V

DYNAMIC

Sym bol Param e t er Test Condit ion s Min . Typ. Max. U nit

C

C

C

Q
Q

g

Q

I

CL

Forward

fs

Tr ansc on duc tance
Input Capac i t ance

ies

Out put Capacitanc e

oes

Reverse Tr ansfer

res

Capacit a nc e
Tot al Gat e Charge

G

Gate-Emitt er Charge

GE

Gat e- Col lect or Char ge

GC

Latc hing C ur rent V

VCE=25 V IC=50A 22 S

VCE=25V f=1MHz VGE= 0 4500

450

90

VCE= 480 V IC=50A VGE= 15 V 260

28
15

=480V RG=10 Ω

clamp

T

= 150oC

j

200 A

µA
µ

V

pF
pF
pF

nC
nC
nC

A

SWITCHING ON

Sym bol Param e t er Test Condit ion s Min . Typ. Max. U nit

(di/dt)

2/6

t

d(on)

t

r

Eon(❍)

Delay T ime
Rise Ti me

Tur n-on Current Slop e

on

Turn-on
Switching Losses

VCC= 480 V IC=50A

=15V RG=10Ω

V

GE

V

=480V IC=50A

CC

=10Ω VGE=15V

R

G

T

=125oC

j

20
70

350
950

ns
ns

A/µs

J

µ