ST STGD7NB60H-1 User Manual
STGD7NB60H-1
STGD7NB60H-1
N-CHANNEL 7A - 600V IPAK
PowerMESH IGBT
TYPE |
VCES |
VCE(sat ) |
IC |
STGD7NB60H-1 |
600 V |
< 2.8 V |
7 A |
■HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
■LOW ON-VOLTAGE DROP (Vcesat)
■LOW GATE CHARGE
■HIGH CURRENT CAPABILITY
■VERY HIGH FREQUENCY OPERATION
■OFF LOSSES INCLUDE TAIL CURRENT
■THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIXº-1º)
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ºHº identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).
APPLICATIONS
■HIGH FREQUENCY MOTOR CONTROLS
■SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
3
2
1
IPAK
TO-251
(Suffix º-1º)
INTERNAL SCHEMATIC DIAGRAM
Symb ol |
Parameter |
Value |
Un it |
VCES |
Collector-Emitter Voltage (VGS = 0) |
600 |
V |
VECR |
Emitter-Collector Voltage |
20 |
V |
VGE |
Gate-Emitter Voltage |
± 20 |
V |
IC |
Collector Current (continuous) at Tc = 25 oC |
14 |
A |
IC |
Collector Current (continuous) at Tc = 100 oC |
7 |
A |
ICM(•) |
Collector Current (pulsed) |
56 |
A |
Ptot |
Total Dissipation at Tc = 25 oC |
55 |
W |
|
Derating Factor |
0.44 |
W/o C |
Ts tg |
Storage Temperature |
-65 to 150 |
o C |
Tj |
Max. Operating Junction Temperature |
150 |
o C |
(•) Pulse width limited by safe operating area
June 1999 |
1/8 |
STGD7NB60H-1
THERMAL DATA
Rthj -case |
Thermal Resistance Junction-case |
Max |
2.27 |
oC/W |
||
Rthj -amb |
Thermal |
Resistance |
Junction-ambient |
Max |
100 |
oC/W |
Rthc-sink |
Thermal |
Resistance |
Case-sink |
Typ |
1.5 |
oC/W |
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbo l |
Parameter |
Test Con ditions |
Min. |
Typ. Max. |
Unit |
|
VBR(CES) |
Collector-Emitt er |
IC = 250 μA VGE = 0 |
|
600 |
|
V |
|
Breakdown Voltage |
|
|
|
|
|
ICES |
Collector cut-off |
VCE = Max Rating |
Tj = |
25 oC |
10 |
μA |
|
(VGE = 0) |
VCE = Max Rating |
Tj = 125 oC |
100 |
μA |
|
IGES |
Gate-Emitter Leakage |
VGE = ± 20 V |
VCE = 0 |
± 100 |
nA |
|
|
Current (VCE = 0) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ON ( ) |
|
|
|
|
|
|
|
|
Symbo l |
Parameter |
Test Con ditions |
Min. |
Typ. |
Max. |
Unit |
||
VGE(th) |
Gate Threshold |
VCE = VGE IC = 250 μA |
|
3 |
|
5 |
V |
|
|
Voltage |
|
|
|
|
|
|
|
VCE(SAT ) |
Collector-Emitt er |
VGE = 15 V |
IC = 7 A |
Tj = 125 oC |
|
2.3 |
2.8 |
V |
|
Saturation Voltage |
VGE = 15 V |
IC = 7 A |
|
1.9 |
|
V |
|
DYNAMIC |
|
|
|
|
|
|
|
|
Symbo l |
Parameter |
Test Con ditions |
Min. |
Typ. |
Max. |
Unit |
||
gf s |
Forward |
VCE =25 V |
IC = 7 A |
|
3.5 |
5 |
|
S |
|
Transconductance |
|
|
|
|
|
|
|
Ci es |
Input Capacitance |
VCE = 25 V |
f = 1 MHz |
VGE = 0 |
390 |
560 |
730 |
pF |
Co es |
Output Capacitance |
|
|
|
45 |
68 |
90 |
pF |
Cres |
Reverse Transfer |
|
|
|
10 |
15 |
20 |
pF |
|
Capacitance |
|
|
|
|
|
|
|
QG |
Total Gate Charge |
VCE = 480 V |
IC = 7 A |
VGE = 15 V |
|
42 |
55 |
nC |
QGE |
Gate-Emitter Charge |
|
|
|
|
7.9 |
|
nC |
QGC |
Gate-Collector Charge |
|
|
|
|
17.6 |
|
nC |
ICL |
Latching Current |
Vclamp = 480 V RG=10Ω |
28 |
|
|
A |
||
|
|
Tj = 150 oC |
|
|
|
|
|
|
SWITCHING ON |
|
|
|
|
|
|
|
|
Symbo l |
Parameter |
Test Co nditi ons |
Min . T yp. Max. Uni t |
|||||
td(on) |
Delay Time |
VCC = 480 V |
|
IC = 7 A |
|
15 |
|
ns |
tr |
Rise Time |
VGE= 15 V |
|
RG = 10Ω |
|
48 |
|
ns |
(di/dt)on |
Turn-on Current Slope |
VCC = 480 V |
|
IC = 7 A |
|
160 |
|
A/μs |
|
|
RG = 10 Ω |
|
VGE = 15 V |
|
|
|
|
Eo n |
Turn-on Switching |
Tj = 125 oC |
|
|
|
70 |
|
μJ |
Losses
2/8
STGD7NB60H-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbo l |
Parameter |
Test Con ditions |
Min. |
Typ. Max. |
Unit |
|
tc |
Cross-Over Time |
VCC = 480 V |
IC = 7 A |
|
85 |
ns |
tr(voff) |
Off Voltage Rise Time |
RGE = 10 Ω |
VGE = 15 V |
|
20 |
ns |
td(off) |
Delay Time |
|
|
|
75 |
ns |
tf |
Fall Time |
|
|
|
70 |
ns |
Eo ff(**) |
Turn-off Switching Loss |
|
|
|
85 |
μJ |
Ets |
Total Switching Loss |
|
|
|
130 |
μJ |
tc |
Cross-Over Time |
VCC = 480 V |
IC = 7 A |
|
150 |
ns |
tr(voff) |
Off Voltage Rise Time |
RGE = 10 Ω |
VGE = 15 V |
|
50 |
ns |
td(off) |
Delay Time |
Tj = 125 oC |
|
|
110 |
ns |
tf |
Fall Time |
|
|
|
110 |
ns |
Eo ff(**) |
Turn-off Switching Loss |
|
|
|
220 |
μJ |
Ets |
Total Switching Loss |
|
|
|
290 |
μJ |
(•) Pulse width limited by max. junction temperature ( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
3/8
Loading...