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STGD7NB60H
N-CHANNEL 7A - 600V - DPAK
PowerMESH™ IGBT
TYPE V
CES
V
CE(sat)
I
C
STD7NB60H 600 V < 2.8 V7 A
■ HIGH INPUT IMPEDANCE
■ LOW ON-VOLTAGE DROP (V
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ VERY HIGH FREQUENCY OPERATION
■ CO-PACKAGED WITH TURBOSWITCHT
■ TYPICAL SHORT CIRCUIT WITHSTAND TIME
cesat
)
5MICROS S-family, 4 micro H family
■ ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a f amily optimized f or high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
P
TOT
T
stg
T
j
Collector-Em itter Voltage (VGS = 0)
600 V
Emitter-Colle ctor Voltage 20 V
Gate-Emitter Voltage ± 20 V
Collector Current (continuos) at TC = 25°C
Collector Current (continuos) at TC = 100°C
(■)
Collector Current (pulsed) 56 A
Total Dissipation at TC = 25°C
14 A
7A
55 W
Derating Factor 0.44 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
1/9July 2000
STGD7NB60H
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 2.27 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 1.5 °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
Collector cut-off
= 0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
= 0)
ON
I
I
(1)
CES
GES
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
IC = 250 µA, VGE = 0 600 V
V
= Max Rating, TC = 25 °C
CE
VCE = Max Rating, TC = 125 °C
V
= ± 20V , VCE = 0 ±100 nA
GE
V
= VGE, IC = 250µA
CE
VGE = 15V, IC = 7 A
VGE = 15V, IC = 7 A, Tj =125°C
35V
2.3 2.8 V
1.9 V
10 µA
100 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Forward Transconductance
Input Capacitance
Output Capacitance 68 pF
Reverse Transfer
= 25 V , IC=3 A
CE
V
= 25V, f = 1 MHz, VGE = 0
CE
3.5 5 S
560 pF
15 pF
Capacitance
Q
g
Q
ge
Q
gc
I
CL
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current V
= 480V, IC = 7 A,
V
CE
V
= 15V
GE
= 480 V , Tj = 150°C
clamp
42
55 nC
7.9
17.6
28 A
RG = 10 Ω
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 480 V, IC = 7 A
t
d(on)
t
(di/dt)
Eon
Turn-on Delay Time
r
Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
V
CC
RG=10Ω , VGE = 15 V
= 480 V, IC = 7 A RG=10Ω
V
CC
V
= 15 V,Tj = 125°C
GE
15
48
160
70
nC
nC
ns
ns
A/µs
µJ
2/9
STGD7NB60H
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
c
t
r(Voff
td(
off
t
f
E
(**)
off
E
ts
t
c
t
r(Voff
td(
off
t
f
E
(**)
off
E
ts
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
2. Pulse width li mited by max. junction temp erature.
(**)Losses in clude Also the T ai l (Jedec Standardization)
Cross-over Time
)
Off Voltage Rise Time 20 ns
)
Delay Time 75 ns
Fall Time 70 ns
Turn-off Switching Loss 85
Total Switching Loss 130
Cross-over Time
)
Off Voltage Rise Time 50 ns
)
Delay Time 110 ns
Fall Time 110 ns
Turn-off Switching Loss 220
Total Switching Loss 290
= 480 V, IC = 7 A,
cc
R
= 10 Ω , VGE = 15 V
GE
V
= 480 V, IC = 3 A,
cc
R
= 10 Ω , VGE = 15 V
GE
Tj = 125 °C
85 ns
150 ns
µJ
µJ
µJ
µJ
Thermal Impedance
3/9
STGD7NB60H
Output Characteristics
Transconductance
Transfer Characteristics
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collettor Current
4/9
Gate Threshold vs Temperature
STGD7NB60H
Normalized Breakdown Volta ge vs Temperature
Capacitance Variations
Total Switching Losses vs Gate ResistanceGate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Tempera ture
Total Switching Losses vs Collector Current
5/9
STGD7NB60H
Switching Off Safe Operating Area
6/9
STGD7NB60H
Fig. 2: Test Circuit For Inductive Load SwitchingFig. 1: Gate Charge test Circuit
7/9
STGD7NB60H
TO-252 (DPAK) MECHANICAL DATA
DIM.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0
MIN. TYP. MAX. MIN. TYP. MAX.
o
mm inch
o
8
o
0
o
0
8/9
P032P_B
STGD7NB60H
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicro electronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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