ST STGD7NB60H User Manual
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STGD7NB60H
N-CHANNEL 7A - 600V - DPAK
PowerMESH™ IGBT
TYPE V
CES
V
CE(sat)
I
C
STD7NB60H 600 V < 2.8 V7 A
■ HIGH INPUT IMPEDANCE
■ LOW ON-VOLTAGE DROP (V
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ VERY HIGH FREQUENCY OPERATION
■ CO-PACKAGED WITH TURBOSWITCHT
■ TYPICAL SHORT CIRCUIT WITHSTAND TIME
cesat
)
5MICROS S-family, 4 micro H family
■ ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a f amily optimized f or high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
P
TOT
T
stg
T
j
Collector-Em itter Voltage (VGS = 0)
600 V
Emitter-Colle ctor Voltage 20 V
Gate-Emitter Voltage ± 20 V
Collector Current (continuos) at TC = 25°C
Collector Current (continuos) at TC = 100°C
(■)
Collector Current (pulsed) 56 A
Total Dissipation at TC = 25°C
14 A
7A
55 W
Derating Factor 0.44 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
1/9July 2000
STGD7NB60H
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 2.27 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 1.5 °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
Collector cut-off
= 0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
= 0)
ON
I
I
(1)
CES
GES
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
IC = 250 µA, VGE = 0 600 V
V
= Max Rating, TC = 25 °C
CE
VCE = Max Rating, TC = 125 °C
V
= ± 20V , VCE = 0 ±100 nA
GE
V
= VGE, IC = 250µA
CE
VGE = 15V, IC = 7 A
VGE = 15V, IC = 7 A, Tj =125°C
35V
2.3 2.8 V
1.9 V
10 µA
100 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Forward Transconductance
Input Capacitance
Output Capacitance 68 pF
Reverse Transfer
= 25 V , IC=3 A
CE
V
= 25V, f = 1 MHz, VGE = 0
CE
3.5 5 S
560 pF
15 pF
Capacitance
Q
g
Q
ge
Q
gc
I
CL
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current V
= 480V, IC = 7 A,
V
CE
V
= 15V
GE
= 480 V , Tj = 150°C
clamp
42
55 nC
7.9
17.6
28 A
RG = 10 Ω
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 480 V, IC = 7 A
t
d(on)
t
(di/dt)
Eon
Turn-on Delay Time
r
Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
V
CC
RG=10Ω , VGE = 15 V
= 480 V, IC = 7 A RG=10Ω
V
CC
V
= 15 V,Tj = 125°C
GE
15
48
160
70
nC
nC
ns
ns
A/µs
µJ
2/9
STGD7NB60H
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
c
t
r(Voff
td(
off
t
f
E
(**)
off
E
ts
t
c
t
r(Voff
td(
off
t
f
E
(**)
off
E
ts
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
2. Pulse width li mited by max. junction temp erature.
(**)Losses in clude Also the T ai l (Jedec Standardization)
Cross-over Time
)
Off Voltage Rise Time 20 ns
)
Delay Time 75 ns
Fall Time 70 ns
Turn-off Switching Loss 85
Total Switching Loss 130
Cross-over Time
)
Off Voltage Rise Time 50 ns
)
Delay Time 110 ns
Fall Time 110 ns
Turn-off Switching Loss 220
Total Switching Loss 290
= 480 V, IC = 7 A,
cc
R
= 10 Ω , VGE = 15 V
GE
V
= 480 V, IC = 3 A,
cc
R
= 10 Ω , VGE = 15 V
GE
Tj = 125 °C
85 ns
150 ns
µJ
µJ
µJ
µJ
Thermal Impedance
3/9
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