ST STGP7NB60F, STGD7NB60F User Manual

STGD7NB60F

STGP7NB60F - STGD7NB60F

N-CHANNEL 7A - 600V - TO-220 / DPAK

PowerMESH™ IGBT

TYPE	VCES	VCE(sat) (Max)	IC
		@25°C	@100°C
STGP7NB60F	600 V	< 2.4 V	7 A
STGD7NB60F	600 V	< 2.4 V	7 A

■HIGH INPUT IMPEDANCE

■LOW ON-VOLTAGE DROP (Vcesat)

■OFF LOSSES INCLUDE TAIL CURRENT

■LOW GATE CHARGE

■HIGH CURRENT CAPABILITY

■HIGH FREQUENCY OPERATION

■ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL (DPAK)

PRELIMINARY DATA

3

3	1
2
1
TO-220	DPAK

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "F" identifies a family optimized to achieve very low switching switching times for frequency applications (<40KHZ)

APPLICATIONS

■MOTOR CONTROLS

■SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter		Value		Unit
		TO-220		DPAK
VCES	Collector-Emitter Voltage (VGS = 0)		600		V
VGE	Gate-Emitter Voltage		±20		V
IC	Collector Current (continuous) at TC = 25°C		14		A
IC	Collector Current (continuous) at TC = 100°C		7		A
ICM ( )	Collector Current (pulsed)		56		A
PTOT	Total Dissipation at TC = 25°C	80		70	W
	Derating Factor	0.64		0.56	W/°C
Tstg	Storage Temperature		– 55 to 150		°C
Tj	Max. Operating Junction Temperature		150		°C
( ) PULSE WIDTH LIMITED BY SAFE OPERATING AREA
June 2003					1/8

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

STGP7NB60F - STGD7NB60F

THERMAL DATA

		TO-220	DPAK
Rthj-case	Thermal Resistance Junction-case Max	1.56	1.78	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max	62.5	100	°C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VBR(CES)	Collectro-Emitter Breakdown	IC = 250 µA, VGE = 0	600			V
	Voltage
ICES	Collector cut-off	VCE = Max Rating, TC = 25 °C			10	µA
	(VGE = 0)	VCE = Max Rating, TC = 125 °C			100	µA
IGES	Gate-Emitter Leakage	VGE = ±20V , VCE = 0			±100	nA
	Current (VCE = 0)

ON (1)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VGE(th)	Gate Threshold Voltage	VCE = VGE, IC = 250µA	3		5	V
VCE(sat)	Collector-Emitter Saturation	VGE = 15V, IC = 7 A		2	2.4	V
	Voltage	VGE = 15V, IC= 7 A, Tj =125°C		1.5		V

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
Cies	Input Capacitance	VCE = 25V, f = 1 MHz, VGE = 0			540	pF
Coes	Output Capacitance				80	pF
Cres	Reverse Transfer				13	pF
	Capacitance
Qg	Total Gate Charge	VCE = 480V, IC = 7 A,		37	50	nC
Qge	Gate-Emitter Charge	VGE = 15V		4		nC
Qgc	Gate-Collector Charge			18		nC
ICL	Latching Current	Vclamp = 480 V		28		A
		Tj = 125°C , R G = 10 Ω

SWITCHING ON

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VCC = 480 V, IC = 7 A		17		ns
tr	Rise Time	RG = 10Ω , VGE = 15 V		6		ns
(di/dt)on	Turn-on Current Slope	VCC= 480 V, IC = 7 A RG=10Ω		900		A/µs
Eon	Turn-on Switching Losses	VGE = 15 V,Tj =125°C		60		µJ

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STGP7NB60F - STGD7NB60F

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
tc	Cross-over Time	Vcc = 480 V, IC = 7 A,		190		ns
tr(Voff)	Off Voltage Rise Time	RG = 10 Ω , VGE = 15 V		45		ns
td(off)	Delay Time			110		ns
tf	Fall Time			140		ns
Eoff(**)	Turn-off Switching Loss			240		μJ
Ets	Total Switching Loss			290		μJ
tc	Cross-over Time	Vcc = 480 V, IC = 7 A,		410		ns
tr(Voff)	Off Voltage Rise Time	RG = 10 Ω , VGE = 15 V		135		ns
		Tj = 125 °C
td(off)	Delay Time			205		ns
tf	Fall Time			300		ns
Eoff(**)	Turn-off Switching Loss			650		μJ
Ets	Total Switching Loss			625		μJ

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization)

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