ST STGD7NB120S-1 User Manual

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N-CHANNEL 7A - 1200V IPAK

TYPE V

CES

STGD7NB120S-1 1200 V < 2.1 V 7 A

■ HIGHINPUTIMPEDANCE

(VOLTAGEDRIVEN)

■ VERYLOW ON-VOLTAGEDROP (V

■ HIGHCURRENT CAPABILITY

■ OFFLOSSES INCLUDE TAIL CURRENT

DESCRIPTION

Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix ”S” identifies a family
optimized to achieve minimum on-voltage drop
for low frequencyapplications(<1kHz).

APPLICATIONS

■ LIGHT DIMMER

■ INRUSHCURRENT LIMITATION

■ MOTORCONTROL

V

CE(sat)

cesat

I

C

)

STGD7NB120S-1

Power MESH IGBT

PRELIMINARY DATA

3

2

1

IPAK

TO-251

(Suffix”-1”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Value Unit

V
V

V

I

CM

P

T

(•) Pulse width limited by safe operating area

April 2000

Collect o r -Em i t t er Voltage ( VGS= 0) 1200 V

CES

Reverse Battery Protection 20 V

ECR

Gate-Emitter Voltage

GE

I

Collect o r Curr ent ( con t inuous) at Tc=25oC10A

C

I

Collect o r Curr ent ( con t inuous) at Tc= 100oC7A

C

20 V

±

(•) Collector Curr ent (pulsed) 20 A

Tot al Di s si pat ion at Tc=25oC55W

tot

Derat ing Factor 0.4 W/
Sto rage Tem perature -65 to 15 0

stg

T

Max. Operat ing Junc tion Tem per ature 150

j

o

C

o

C

o

C

1/6

STGD7NB120S-1

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p

2.27
100

1.5

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

j

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collector-Emitter

IC=250µAVGE= 0 1200 V

Break dow n Volt age

V

BR(ECR)

Emitter-Collector

IC = 10 mA VGE=0 20 V

Break dow n Volt age

I

I

CES

GES

Collect o r cut - off

=0)

(V

GE

Gat e- Em i t t er Lea k age
Current (V

CE

=0)

V

=MaxRating Tj=25oC

CE

=0.8MaxRating Tj= 125oC

V

CE

V

= ± 20 V VCE=0 ±100 nA

GE

250

1000

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

Gate Threshold

VCE=VGEIC= 250 µ A35V

Voltage

V

V

CE(SAT)

Gat e Em it t er Volt age VCE=2.5V IC=2A Tj=25 ÷125oC6.5V

GE

Collector-Emitter
Sat urat ion Volt age

VGE=15V IC=3.5A

=15V IC=7A

V

GE

V

=15V IC=10A 1.7

GE

1.6

2.1

DYNAMIC

µ
µA

V
V
V

A

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

Forward

fs

VCE=25 V IC=7A 2.5 4.5 S

Tr ansc on duc tance

C

C

C

Input C apacitance

ies

Out put Capacitance

oes

Reverse Tr ansfer

res

VCE=25V f=1MHz VGE= 0 430

40

7

Capacit a nc e

Q
I

CL

Gat e Charge VCE= 960 V IC=7A VGE= 15 V 29 nC

G

Latc hing Curr ent V

=960V RG=1kΩ

clamp

= 150oC

T

j

10 A

SWITCHINGON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(di/dt)

2/6

t

d(on)

E

Delay Time

t

Rise Ti m e

r

Tur n-on Current Slope

on

Turn-on

on

Switching Losses

VCC= 960 V IC=7A

=15V RG=1KΩ

V

GE

VCC=960V IC=7A

=1KΩ VGE=15V

R

G

T

=125oC

j

570
270

800

3.2

pF
pF
pF

ns
ns

A/µs

mJ