ST STGD6NC60HD User Manual
STGD6NC60HD
N-CHANNEL 6A - 600V DPAK
Very Fast PowerMESH™ IGBT
TARGET SPECIFICATION
Table 1: Ge neral Features
TYPE V
STGD6NC60HDT4 600 V < 2.5 V6 A
■ LOWER ON-VOLTAGE DROP (V
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOSSES INCLUDE DIODE RECOVERY
CES
V
CE(sat)
(Max) @25°C
cesat
I
C
@100°C
)
ENERGY
■ LOWER C
■ HIGH FREQUENCY OPERATION
■ VERY SOFT ULTRA FAST RECOVERY ANTI
RES/CIES
RATIO
PARALLEL DIODE
■ NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the PowerMESH
™
IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized for high
frequency applications in order to achieve very
high switching performances (reduced tfall) mantaining a low voltage drop.
Figure 1: Package
3
1
DPAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
■ MOTOR DRIVERS
Table 2: Order Code
PART NUMBER MARKING PACKAGE PACKAGING
STGD6NC60HDT4 GD6NC60HD DPAK TAPE & REEL
June 2005
This is a preliminary information on a new product foreseen to be developed. Details are subjet to change without notice
Rev. 1
1/9
STGD6NC60HD
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
V
CES
V
ECR
V
I
CM
P
TOT
T
() Pulse width limi ted by max. junction tempe rature.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case 2.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient 100 °C/W
Collector-Emitter Voltage (VGS = 0)
600 V
Emitter-Collector Voltage 20 V
Gate-Emitter Voltage ±20 V
GE
I
Collector Current (continuous) at TC = 25°C (#)
C
I
Collector Current (continuous) at TC = 100°C (#)
C
()
Collector Current (pulsed) 24 A
Diode RMS Forward Current at TC = 25°C
I
F
Total Dissipation at TC = 25°C
10 A
6A
TBD A
50 W
Derating Factor 0.40 W/°C
Storage Temperature
stg
T
Operating Junction Temperature
j
– 55 to 150 °C
Min. Typ. Max.
T
L
Maximum Lead T emperature for Soldering Purpose (1.6 mm from
275 °C
case, for 10 sec.)
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: Main Parameters
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Em itter Break down
Voltage
I
CES
I
GES
V
GE(th)
V
CE(sat)
Collector cut-off Current
= 0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
= 0)
Gate Threshold Voltage
Collector-Em itter Satur ation
Voltage
(#) Calculated according to the iterative formula:
T
–
ICTC()
--------------------------------------------------------------------------------------------------
=
R
THJ C–
JMAXTC
V
CESAT MAX()TCIC
,()×
IC = 1 mA, VGE = 0 600 V
V
= Max Rating, TC = 25 °C
CE
VCE = Max Rating, TC = 125 °C
V
= ± 20V , VCE = 0 ±100 nA
GE
V
= VGE, IC = 250 µA
CE
VGE = 15V, IC = 3 A
VGE = 15V, IC = 3 A, Tc= 125 °C
3.75 5.75 V
1.9
1.7
10
1
2.5 V
µA
mA
V
2/9
STGD6NC60HD
ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
g
fs
C
ies
C
oes
C
res
Forward Transconductance
Input Capacitance
Output Capacitance 28 pF
Reverse Transfer
Capacitance
Q
g
Q
ge
Q
gc
I
CL
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-Off SOA Minimum
Current
(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
t
d(on)
t
(di/dt)
r
r
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
on
VCE = 15 V , IC= 3 A TBD S
V
= 25 V, f= 1 MHz, VGE = 0
CE
320 pF
7.2 pF
= 390 V, IC = 3 A,
V
CE
VGE = 15 V
(see Figure 5)
V
= 480 V , Tj = 150°C
clamp
R
= 10 Ω, VGE = 15 V
G
VCC = 390 V, IC = 3 A
R
=10 Ω, VGE= 15V, Tj= 25°C
G
(see Figure 3)
VCC = 390 V, IC = 3 A
RG=10 Ω, VGE= 15V , Tj= 125°C
(see Figure 3)
TBD A
15
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD nC
nC
nC
ns
ns
A/µs
ns
ns
A/µs
Table 8: Switching Off
Symbol Paramet er Test Conditions Min. Typ. Max. Unit
t
r(Voff
t
d(off
t
r(Voff
t
d(off
)
Off Voltage Rise Time
)
Turn-off Delay Time TBD ns
t
f
t
f
Current Fall Time 70 ns
)
Off Voltage Rise Time
)
Turn-off Delay Time TBD ns
Current Fall Time TBD ns
Vcc = 390 V, IC = 3 A,
R
= 10 Ω , VGE = 15 V
G
TJ = 25 °C
(see Figure 3)
Vcc = 390 V, IC = 3 A,
R
= 10 Ω , VGE = 15 V
G
Tj = 125 °C
(see Figure 3)
TBD ns
TBD ns
Table 9: Switching Energy
Symbol Parameter Test Conditions Min. Typ. Max Unit
Eon (2)
E
off
E
ts
Eon (2)
E
off
E
ts
(2) Eon i s t he tur n-on l oss es wh en a typ ica l diod e is used in th e tes t cir cui t in fig ure 2. I f the IGB T is o ffere d in a pac kage w it h a co- pa ck
diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3) Turn-off losses include als o the tail of th e collector current.
Turn-on Switching Losses
Turn-off Switching Loss
(3)
Total Switching Loss
Turn-on Switching Losses
Turn-off Switching Loss
(3)
Total Switching Loss
= 390 V, IC = 3 A
V
CC
R
= 10 Ω, VGE= 15V, Tj= 25°C
G
(see Figure 3)
= 390 V, IC = 3 A
V
CC
RG= 10 Ω, VGE= 15V, Tj= 125°C
(see Figure 3)
TBD
TBD
TBD
TBD
TBD
TBD
µJ
µJ
µJ
µJ
µJ
µJ
3/9
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