ST STGD5NB120SZ-1, STGD5NB120SZ User Manual
STGD5NB120SZ
STGD5NB120SZ-1
STGD5NB120SZ
N-CHANNEL 5A - 1200V DPAK/IPAK
INTERNALLY CLAMPED PowerMESH™ IGBT
Table 1: General Features
TYPE |
VCES |
VCE(sat) |
IC |
STGD5NB120SZ |
1200 V |
< 2.0 V |
5 A |
STGD5NB120SZ-1 |
1200 V |
< 2.0 V |
5 A |
|
|
|
|
■HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
■LOW ON-VOLTAGE DROP (Vcesat)
■HIGHT CURRENT CAPABILITY
■OFF LOSSES INCLUDE TAIL CURRENT
■HIGH VOLTAGE CLAMPING FEATURES
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). The built in collector-gate zener exibits a very precise active clamping.
APPLICATIONS
■LIGHT DIMMER
■INRUSH CURRENT LIMITATION
■PRE-HEATING FOR ELECTRONIC LAMP BALLAST
Table 2: Order Code
Figure 1: Package
|
3 |
3 |
1 |
|
2 |
|
|
1 |
DPAK |
|
IPAK |
Figure 2: Internal Schematic Diagram
PART NUMBER |
MARKING |
PACKAGE |
PACKAGING |
|
|
|
|
STGD5NB120SZT4 |
GD5NB120SZ |
DPAK |
TAPE & REEL |
|
|
|
|
STGD5NB120SZ-1 |
GD5NB120SZ |
IPAK |
TUBE |
|
|
|
|
Rev. 2
January 2005 |
1/13 |
STGD5NB120SZ-1 - STGD5NB120SZ
Table 3: Absolute Maximum ratings
Symbol |
|
|
Parameter |
|
|
|
|
Value |
|
|
Unit |
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VCES |
|
Collector-Emitter Voltage (VGS = 0) |
|
|
1200 |
|
|
|
V |
||||
VECR |
|
Emitter-Collector Voltage |
|
|
|
20 |
|
|
|
V |
|||
VGE |
|
Gate-Emitter Voltage |
|
|
|
±20 |
|
|
|
V |
|||
IC |
|
Collector Current (continuous) at TC = 25°C |
|
|
10 |
|
|
|
A |
||||
IC |
|
Collector Current (continuous) at TC = 100°C |
|
|
5 |
|
|
|
A |
||||
ICM ( ) |
|
Collector Current (pulsed) |
|
|
|
20 |
|
|
|
A |
|||
PTOT |
|
Total Dissipation at TC = 25°C |
|
|
|
55 |
|
|
|
W |
|||
|
|
Derating Factor |
|
|
|
0.44 |
|
|
|
W/°C |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Eas (1) |
|
Single Pulse Avalanche Energy at Tj = 25°C |
|
|
10 |
|
|
|
mJ |
||||
|
Single Pulse Avalanche Energy at Tj = 100°C |
|
|
7 |
|
|
|
mJ |
|||||
|
|
|
|
|
|
|
|||||||
Tstg |
|
Storage Temperature |
|
|
|
–55 to 150 |
|
|
°C |
||||
Tj |
|
Operating Junction Temperature range |
|
|
150 |
|
|
|
°C |
||||
( ) Pulse width limited by safe operating area |
|
|
|
|
|
|
|
|
|
|
|||
(1) VCE = 50 V , IAV = 3.3 A |
|
|
|
|
|
|
|
|
|
|
|||
Table 4: Thermal Data |
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Min. |
|
|
Typ. |
|
Max. |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Rthj-case |
|
Thermal Resistance Junction-case |
|
|
|
|
|
|
2.27 |
|
°C/W |
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Rthj-amb |
|
Thermal Resistance Junction-ambient |
|
|
|
|
|
|
100 |
|
°C/W |
||
|
|
|
|
|
|
|
|
|
|
||||
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) |
|
|
|
||||||||||
Table 5: On/Off |
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Symbol |
|
Parameter |
Test Conditions |
|
Min. |
|
|
Typ. |
|
Max. |
|
Unit |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VBR(CES) |
|
Collector-Emitter Breakdown |
IC = 10 mA, VGE = 0 V |
|
1200 |
|
|
|
|
|
|
V |
|
|
|
|
Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ICES |
|
Collector cut-off Current |
VCE = 900 V |
|
|
|
|
|
|
50 |
|
µA |
|
|
|
|
(VGE = 0) |
VCE = 900 V, Tj = 125 °C |
|
|
|
|
|
|
250 |
|
µA |
IGES |
|
Gate-Emitter Leakage |
VGE = ±20V , V CE = 0 V |
|
|
|
|
|
|
±100 |
|
nA |
|
|
|
|
Current (VCE = 0) |
|
|
|
|
|
|
|
|
|
|
VGE(th) |
|
Gate Threshold Voltage |
VCE = VGE, IC = 250 µA |
|
2 |
|
|
|
|
5 |
|
V |
|
VGE |
|
Gate Emitter Voltage |
VCE =2.5 V, IC = 2 A, |
|
|
|
|
|
|
6.5 |
|
V |
|
|
|
|
|
Tj = 25÷125°C |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
VCE(sat) |
|
Collector-Emitter Saturation |
VGE = 15V, IC = 5 A |
|
|
|
|
1.3 |
|
2.0 |
|
V |
|
|
|
|
Voltage |
VGE = 15V, IC = 5 A, Tj =125°C |
|
|
|
1.2 |
|
|
|
V |
|
2/13
STGD5NB120SZ-1 - STGD5NB120SZ
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
gfs |
Forward Transconductance |
VCE = 25 V , IC = 5 A |
|
5 |
|
S |
Cies(*) |
Input Capacitance |
VCE = 25V, f = 1 MHz, VGE = 0V |
|
430 |
|
pF |
Coes(*) |
Output Capacitance |
|
|
40 |
|
pF |
Cres(*) |
Reverse Transfer |
|
|
7 |
|
pF |
|
Capacitance |
|
|
|
|
|
|
|
|
|
|
|
|
Rg |
Gate Resistance |
|
|
4 |
|
KΩ |
|
|
|
|
|
|
|
(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
td(on) |
Delay Time |
IC = 5 A , VCC = 960 V |
|
690 |
|
ns |
tr |
Current Rise Time |
VGE = 15 V , Rdrive = 1KΩ |
|
170 |
|
ns |
(di/dt)on |
Turn-on Current Slope |
Tj = 25°C |
|
39.6 |
|
A/µs |
td(on) |
Dealy Time |
ICC = 5 A , VCC = 960 V |
|
600 |
|
ns |
tr |
Current Rise Time |
VGE = 15 V , Rdrive = 1KΩ |
|
185 |
|
ns |
(di/dt)on |
Turn-on Current Slope |
Tj = 125°C |
|
39 |
|
A/µs |
Table 8: Switching Off
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
|
|
|
|
|
|
|
|
tc |
Cross-over Time |
IC = 5 A , VCC = 960 V |
|
4 |
|
s |
|
tr(Voff) |
Off Voltage Rise Time |
VGE = 15 V , Rdrive = 1KΩ |
|
2.2 |
|
s |
|
td(off) |
Delay Time |
Tj = 25°C |
|
12.1 |
|
s |
|
tf |
Current Fall Time |
|
|
1.13 |
|
s |
|
|
|
|
|
|
|||
tc |
Cross-over Time |
IC = 5 A , VCC = 960 V |
|
5 |
|
s |
|
tr(Voff) |
Off Voltage Rise Time |
VGE = 15 V , Rdrive = 1KΩ |
|
2.2 |
|
s |
|
td(off) |
Delay Time |
Tj = 125°C |
|
12.1 |
|
s |
|
tf |
Current Fall Time |
|
|
2 |
|
s |
|
|
|
|
|
|
|||
Table 9: Switching Energy |
|
|
|
|
|
||
|
|
|
|
|
|
|
|
Symbol |
|
Parameterr |
Test Conditions |
Min. |
Typ. |
Max |
Unit |
|
|
|
|
|
|
|
|
Eon (2) |
|
Turn-on Switching Losses |
VCC = 800 V, IC = 3 A |
|
2.59 |
|
mJ |
Eoff (3) |
|
Turn-off Switching Loss |
RG= 10 Ω , VGE= 15V, Tj= 25°C |
|
9 |
|
mJ |
Ets |
|
Total Switching Loss |
(see Figure 18) |
|
11.59 |
|
mJ |
Eon (2) |
|
Turn-on Switching Losses |
VCC = 800 V, IC = 3 A |
|
2.64 |
|
mJ |
Eoff (3) |
|
Turn-off Switching Loss |
RG= 10 Ω , VGE= 15V, Tj= 125°C |
|
10.2 |
|
mJ |
Ets |
|
Total Switching Loss |
(see Figure 18) |
|
12.68 |
|
mJ |
|
|
|
|
|
|
|
|
(2)Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2.
(3)Turn-off losses include also the tail of the collector current.
3/13
STGD5NB120SZ-1 - STGD5NB120SZ
Table 10: Functional Test
Symbol |
Parameterr |
Test Conditions |
Min. |
Typ. |
Max |
Unit |
|
|
|
|
|
|
|
Ias |
Unclamped inductive switching |
VCC = 50 V, L= 1.8 mH |
3.3 |
|
|
A |
|
current |
Tstart = 25°C, Rdrive = 1KΩ |
|
|
|
|
ICL |
Latching Current |
VCLAMP = 960 V, Tj =125°C |
|
10 |
|
A |
|
|
Rdrive = 1KΩ |
|
|
|
|
|
|
|
|
|
|
|
4/13
Loading...