查询STGD3NB60SD供应商
®
N-CHANNEL 3A - 600V DPAK
TYPE V
STGD3NB60SD 600 V < 1.5 V 3 A
■
HIGH INPUT IMPEDANCE
CES
(VOLTAGE DRIVEN)
■
VERY LOW ON-VOLTAGE DROP (V
■
HIGH CURRENT CAPABILITY
■
OFF LOSSES INCLUDE TAIL CURRENT
■
INTEGRATED FREEWHEELING DIODE
■
SURFACE-MOU NTING DPAK (TO-252)
POWER PACKAGE IN TA P E & R E EL
(SUFFIX "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
V
CE(sat)
cesat
I
C
)
STGD3NB60SD
Power MESH IGBT
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
GAS DISCHARGE LAMP
■
STATIC RELAYS
■
MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
I
CM
P
T
(•) Pulse width limited by safe operating area
Collector-Emitter Voltage (VGS = 0) 600 V
CES
Gate-Emitter Voltage ± 20 V
GE
I
Collector Current (continuous) at Tc = 25 oC6A
C
I
Collector Current (continuous) at Tc = 100 oC3A
C
(•) Collector Current (pulsed) 25 A
Total Dissipation at Tc = 25 oC48W
tot
Derating Factor 0.32 W/
Storage Temperature -65 to 175
stg
T
Max. Operating Junction Temperature 175
j
o
C
o
C
o
C
March 2000
1/8
STGD3NB60SD
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
3.125
100
1.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter
IC = 250 µA V
= 0 600 V
GE
Breakdown Voltage
I
I
ON (∗
CES
GES
Collector cut-off
(V
= 0)
GE
Gate-Emitter Leakage
Current (V
)
CE
= 0)
= Max Rating Tj = 25 oC
V
CE
V
= Max Rating Tj = 125 oC
CE
= ± 20 V VCE = 0 ± 100 nA
V
GE
10
100
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
Gate Threshold
V
= VGE IC = 250 µA 2.5 5 V
CE
Voltage
V
CE(SAT)
Collector-Emitter
Saturation Voltage
VGE = 15 V IC = 1.5 A
V
= 15 V IC = 3 A
GE
V
= 15 V IC = 3 A Tj = 125 oC
GE
1
1.2
1.1
1.5
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
C
C
C
Q
Q
Q
I
CL
Forward
fs
Transconductance
Input Capacitance
ies
Output Capacitance
oes
Reverse Transfer
res
Capacitance
Total Gate Charge
G
Gate-Emitter Charge
GE
Gate-Collector Charge
GC
Latching Current V
VCE =25 V IC = 3 A 1.7 2.5 S
V
= 25 V f = 1 MHz V
CE
V
= 480 V IC = 3 A VGE = 15 V 18
CE
= 0 255
GE
30
5.6
330
40
7
5.4
5.5
= 480 V RG=1kΩ
clamp
T
= 150 oC
j
12 A
µA
µA
V
V
V
pF
pF
pF
nC
nC
nC
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
125
150
50
1100
(di/dt)
2/8
t
d(on)
E
Delay Time
Rise Time
t
r
Turn-on Current Slope
on
Turn-on Switching
on
Losses
VCC = 480 V IC = 3 A
V
= 15 V RG = 1kΩ
GE
V
= 480 V IC = 3 A
CC
R
= 1kΩ VGE = 15 V
G
T
= 125 oC
j
ns
ns
A/µs
µJ
STGD3NB60SD
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
= 480 V IC = 3 A
CC
R
= 1 kΩ VGE = 15 V
GE
V
= 480 V IC = 3 A
CC
R
= 1kΩ VGE = 15 V
GE
T
= 125 oC
j
I
= 1 A
f
I
= 3 A VR=200 V
f
dI/dt = 100 A/µS T
= 125 oC
j
1.8
1.0
3.4
0.72
1.15
2.8
1.45
3.6
1.2
1.8
1.55
1.15
1700
4500
9.5
3
25
1.9 V
tr(v
t
E
tr(v
t
E
t
d(off
off
t
d(off
off
Cross-Over Time
c
Off Voltage Rise Time
)
off
Delay Time
)
Fall Time
t
f
Turn-off Switching Loss
(**)
Cross-Over Time
c
Off Voltage Rise Time
)
off
Delay Time
)
Fall Time
t
f
Turn-off Switching Loss
(**)
COLLECTOR-EMITTER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Forward Current
I
f
I
V
t
Q
I
rrm
(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardi zat io n)
Forward Current pulsed
fm
Forward On-Voltage If = 3 A
f
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
Reverse Recovery Current
µ
µ
µ
µ
mJ
µ
µ
µ
µ
mJ
nC
s
s
s
s
s
s
s
s
A
A
V
ns
A
Thermal Impedance
3/8
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