ST STGD3NB60S User Manual

STGD3NB60St4

STGD3NB60S

N-CHANNEL 3A - 600V DPAK

Power MESH IGBT

TYPE	VCES	VCE(sat )	IC
STGD3NB60S	600 V	< 1.5 V	3 A

■HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

■VERY LOW ON-VOLTAGE DROP (Vcesat)

■HIGH CURRENT CAPABILITY

■OFF LOSSES INCLUDE TAIL CURRENT

■SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ºT4º)

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ºSº identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).

APPLICATIONS

■LIGHT DIMMER

■STATIC RELAYS

■MOTOR CONTROL

PRELIMINARY DATA

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1

DPAK

TO-252

(Suffix ºT4º)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol	Parameter	Value	Un it
VCES	Collector-Emitter Voltage (VGS = 0)	600	V
VECR	Reverse Battery Protection	20	V
VGE	Gate-Emitter Voltage	± 20	V
IC	Collector Current (continuous) at Tc = 25 oC	6	A
IC	Collector Current (continuous) at Tc = 100 oC	3	A
ICM(•)	Collector Current (pulsed)	24	A
Ptot	Total Dissipation at Tc = 25 oC	40	W
	Derating Factor	0.32	W/o C
Ts tg	Storage Temperature	-65 to 150	o C
Tj	Max. Operating Junction Temperature	150	o C

(•) Pulse width limited by safe operating area

June 1999

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STGD3NB60S

THERMAL DATA

Rthj -case	Thermal Resistance Junction-case			Max	3.125	oC/W
Rthj -amb	Thermal	Resistance	Junction-ambient	Max	100	oC/W
Rthc-sink	Thermal	Resistance	Case-sink	Typ	1.5	oC/W

ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)

OFF

Symbo l	Parameter	Test Con ditions		Min.	Typ. Max.	Unit
VBR(CES)	Collector-Emitt er	IC = 250 μA VGE = 0		600		V
	Breakdown Voltage
ICES	Collector cut-off	VCE = Max Rating	Tj =	25 oC	10	μA
	(VGE = 0)	VCE = Max Rating	Tj = 125 oC		100	μA
IGES	Gate-Emitter Leakage	VGE = ± 20 V	VCE = 0		± 100	nA
	Current (VCE = 0)

ON ( )

Symbo l	Parameter	Test Con ditions			Min. Typ.	Max.	Unit
VGE(th)	Gate Threshold	VCE = VGE	IC = 250 μA		2.5	5	V
	Voltage
VCE(SAT ) Collector-Emitt er		VGE = 15 V	IC = 3	A	1.2	1.5	V
	Saturation Voltage	VGE = 15 V	IC = 1	A	1		V

DYNAMIC

Symbo l	Parameter	Test Con ditions			Min. Typ. Max.		Unit
gf s	Forward	VCE =25 V	IC = 3 A		1.7	2.5	S
	Transconductance
Ci es	Input Capacitance	VCE = 25 V	f = 1 MHz	VGE = 0		255	pF
Co es	Output Capacitance					30	pF
Cres	Reverse Transfer					5.6	pF
	Capacitance
QG	Total Gate Charge	VCE = 480 V	IC = 3 A	VGE = 15 V		18	nC
QGE	Gate-Emitter Charge					5.4	nC
QGC	Gate-Collector Charge					5.5	nC
ICL	Latching Current	Vclamp = 480 V RG=1kΩ			12		A
		Tj = 150 oC

SWITCHING ON

Symbo l	Parameter	Test Co nditi ons		Min . T yp. Max. Uni t
td(on)	Delay Time	VCC = 480 V	IC = 3 A	170	ns
tr	Rise Time	VGE= 15 V	RG = 1kΩ	540	ns
(di/dt)on	Turn-on Current Slope	VCC = 480 V	IC = 3 A	30	A/μs
		RG = 1kΩ	V GE = 15 V
Eo n	Turn-on Switching	Tj = 125 oC		300	μJ

Losses

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STGD3NB60S

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING OFF

Symbo l

Parameter

Test Con ditions

Min. Typ. Max. Unit

tc	Cross-Over Time
tr(voff)	Off Voltage Rise Time
td(off)	Delay Time
tf	Fall Time
Eo ff(**)	Turn-off Switching Loss
tc	Cross-Over Time
tr(voff)	Off Voltage Rise Time
td(off)	Delay Time
tf	Fall Time
Eo ff(**)	Turn-off Switching Loss

VCC = 480 V	IC = 3 A	1.8	μs
RGE = 1 kΩ	VGE = 15 V	1.0	μs
		3.4	μs
		0.72	μs
		1.15	mJ
VCC = 480 V	IC = 3 A	2.8	μs
RGE = 10 Ω	VGE = 15 V	1.45	μs
Tj = 125 oC		3.6	μs
		1.2	μs
		1.8	mJ

(•) Pulse width limited by max. junction temperature ( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %

(**)Losses Include Also The Tail (Jedec Standardization)

Thermal Impedance

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