ST STGP7NC60HD, STGF7NC60HD, STGB7NC60HD User Manual

STGB7NC60HD

STGP7NC60HD

STGF7NC60HD - STGB7NC60HD

N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK

Very Fast PowerMESH™ IGBT

Table 1: General Features

TYPE	VCES	VCE(sat) (Max)	IC
		@25°C	@100°C
STGP7NC60HD	600 V	< 2.5 V	14 A
STGF7NC60HD	600 V	< 2.5 V	6 A
STGB7NC60HD	600 V	< 2.5 V	14 A

■LOWER ON-VOLTAGE DROP (Vcesat)

■OFF LOSSES INCLUDE TAIL CURRENT

■LOSSES INCLUDE DIODE RECOVERY ENERGY

■LOWER CRES/CIES RATIO

■HIGH FREQUENCY OPERATION UP TO 70 KHz

■VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE

■NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

APPLICATIONS

■HIGH FREQUENCY INVERTERS

■SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

■MOTOR DRIVERS

Table 2: Order Code

Figure 1: Package

	2	3	3
1			2
TO-220			1
			TO-220FP
			3
			1
			D2PAK

Figure 2: Internal Schematic Diagram

PART NUMBER	MARKING	PACKAGE	PACKAGING
STGP7NC60HD	GP7NC60HD	TO-220	TUBE
STGF7NC60HD	GF7NC60HD	TO-220FP	TUBE
STGB7NC60HDT4	GB7NC60HD	D2PAK	TAPE & REEL

Rev.9

June 2005

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Table 3: Absolute Maximum ratings

Symbol	Parameter	Value				Unit
		STGP7NC60HD		STGF7NC60HD
		STGB7NC60HD
VCES	Collector-Emitter Voltage (VGS = 0)	600				V
VECR	Emitter-Collector Voltage	20				V
VGE	Gate-Emitter Voltage	±20				V
IC	Collector Current (continuous) at TC = 25°C (#)	25			10	A
IC	Collector Current (continuous) at TC = 100°C (#)	14			6	A
ICM ( )	Collector Current (pulsed)	50				A
IF	Diode RMS Forward Current at TC = 25°C	20				A
PTOT	Total Dissipation at TC = 25°C	80			25	W
	Derating Factor	0.64			0.20	W/°C
VISO	Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)	--			2500	V
Tstg	Storage Temperature	– 55 to 150				°C
Tj	Operating Junction Temperature

( ) Pulse width limited by max. junction temperature.

Table 4: Thermal Data

				Min.	Typ.	Max.
Rthj-case	Thermal Resistance Junction-case		TO-220			1.56	°C/W
			D²PAK
			TO-220FP			5.0	°C/W
Rthj-amb	Thermal Resistance Junction-ambient					62.5	°C/W
TL	Maximum Lead Temperature for Soldering Purpose				300		°C
	(1.6 mm from case, for 10 sec.)

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: Main Parameters

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VBR(CES)	Collector-Emitter Breakdown	IC = 1 mA, VGE = 0	600			V
	Voltage
ICES	Collector cut-off Current	VCE = Max Rating, TC = 25 °C			10	µA
	(VGE = 0)	VCE = Max Rating, TC = 125 °C			1	mA
IGES	Gate-Emitter Leakage	VGE = ± 20V , VCE = 0			±100	nA
	Current (VCE = 0)
VGE(th)	Gate Threshold Voltage	VCE = VGE, IC = 250 µA	3.75		5.75	V
VCE(sat)	Collector-Emitter Saturation	VGE = 15V, IC = 7 A		1.85	2.5	V
	Voltage	VGE = 15V, IC = 7 A, Tc= 125°C		1.7		V

(#) Calculated according to the iterative formula:

	IC	( TC) =	TJ MAX – TC
			×-----V-----C----E-----SA--------T----(---M-----A-----X-----)--(T------C----,---I--C----)
		RTHJ – C

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ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 6: Dynamic

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VCE = 15 V , IC = 7 A		4.30		S
Cies	Input Capacitance	VCE = 25 V, f= 1 MHz, VGE = 0		720		pF
Coes	Output Capacitance			81		pF
Cres	Reverse Transfer			17		pF
	Capacitance
Qg	Total Gate Charge	VCE = 390 V, IC = 7 A,		35	48	nC
Qge	Gate-Emitter Charge	VGE = 15 V		7		nC
Qgc	Gate-Collector Charge	(see Figure 22)		16		nC
ICL	Turn-Off SOA Minimum	Vclamp = 480 V , Tj = 150°C	50			A
	Current	RG = 10 Ω, VGE = 15 V

(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%

Table 7: Switching On

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VCC = 390 V, IC = 7 A		18.5		ns
tr	Current Rise Time	RG= 10 Ω , VGE= 15V, Tj= 25°C		8.5		ns
(di/dt)on	Turn-on Current Slope	(see Figure 19)		1060		A/µs
td(on)	Turn-on Delay Time	VCC = 390 V, IC = 7 A		18.5		ns
tr	Current Rise Time	RG= 10 Ω , VGE= 15V, Tj= 125°C		7		ns
(di/dt)on	Turn-on Current Slope	(see Figure 20)		1000		A/µs

Table 8: Switching Off

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
tr(Voff)	Off Voltage Rise Time	Vcc = 390 V, IC = 7 A,		27		ns
td(off)	Turn-off Delay Time	RG = 10 Ω , VGE = 15 V		72		ns
		TJ = 25 °C
tf	Current Fall Time			60		ns
		(see Figure 20)
tr(Voff)	Off Voltage Rise Time	Vcc = 390 V, IC = 7 A,		56		ns
td(off)	Turn-off Delay Time	RG = 10 Ω , VGE = 15 V		116		ns
		Tj = 125 °C
tf	Current Fall Time			105		ns
		(see Figure 20)

Table 9: Switching Energy

Symbol	Parameter	Test Conditions	Min.	Typ.	Max	Unit
Eon (2)	Turn-on Switching Losses	VCC = 390 V, IC = 7 A		95	125	µJ
Eoff (3)	Turn-off Switching Loss	RG= 10 Ω , VGE= 15V, Tj= 25°C		115	150	µJ
Ets	Total Switching Loss	(see Figure 19)		210	275	µJ
Eon (2)	Turn-on Switching Losses	VCC = 390 V, IC = 7 A		140		µJ
Eoff (3)	Turn-off Switching Loss	RG= 10 Ω , VGE= 15V, Tj= 125°C		215		µJ
Ets	Total Switching Loss	(see Figure 20)		355		µJ

(2)Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)

(3)Turn-off losses include also the tail of the collector current.

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Table 10: Collector-Emitter Diode

Symbol	Parameter	Test Condiction	Min.	Typ.	Max.	Unit
Vf	Forward On-Voltage	If = 3.5 A		1.3	1.9	V
		If = 3.5 A, Tj = 125 °C		1.1		V
trr	Reverse Recovery Time	If = 7 A, VR = 40 V,		37		ns
ta		Tj = 25 °C, di/dt = 100 A/µs		22		ns
Qrr	Reverse Recovery Charge			40		nC
Irrm	Reverse Recovery Current			2.1		A
S	Softness factor of the diode			0.68
trr	Reverse Recovery Time	If = 7 A, VR = 40 V,		61		ns
ta		Tj = 125 °C, di/dt = 100 A/µs		34		ns
Qrr	Reverse Recovery Charge			98		nC
Irrm	Reverse Recovery Current			3.2		A
S	Softness factor of the diode			0.79

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Figure 3: Output Characteristics

Figure 4: Transconductance

Figure 5: Collector-Emitter On Voltage vs Collector Current

Figure 6: Transfer Characteristics

Figure 7: Collector-Emitter On Voltage vs Temperature

Figure 8: Normalized Gate Threshold vs Temperature

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