ST STGB7NB60HD User Manual

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N-CHANNEL 7A - 600V DPAK

TYPE V

STGB7NB60HD 600 V < 2.8 V 7 A

■

HIGH INPUT IMPEDANCE

CES

(VOLTAGE DRIVEN)

■

LOW ON-VOLTAGE DROP (V

■

LOW GATE CHARGE

■

HIGH CURRENT CAPABILITY

■

VERY HIGH FREQUENCY OPERATION

■

OFF LOSSES INCLUDE TAIL CURRENT

■

CO-PACKAGED WITH TURBOSWITCH ANTIPARALLEL DIODE

■

SURFACE-MOU NTING D2PAK (TO-263) POWER PACKAGE IN TA PE & REEL (SUFFIX "T4")

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

V

CE(sat)

cesat

I

C

)



STGB7NB60HD

PowerMESH IGBT

3

1

D2PAK

TO-263

(Suffix "T 4")

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH FREQUENCY MOTOR CONTROLS

■

SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

CM

P

T

(•) Pulse width limited by safe operating area

June 1999

Collector-Emitter Voltage (VGS = 0) 600 V

CES

Gate-Emitter Voltage ± 20 V

GE

I

Collector Current (continuous) at Tc = 25 oC14A

C

I

Collector Current (continuous) at Tc = 100 oC7A

C

(•) Collector Current (pulsed) 56 A

Total Dissipation at Tc = 25 oC80W

tot

Derating Factor 0.64 W/ Storage Temperature -65 to 150

stg

T

Max. Operating Junction Temperature 150

j

o

C

o

C

o

C

1/8

STGB7NB60HD

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ

1.56

62.5

0.5

o

C/W

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS

= 25 oC unless otherwise specified)

(T

j

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

BR(CES)

Collector-Emitter

IC = 250 µA V

= 0 600 V

GE

Breakdown Voltage

I

CES

GES

Collector cut-off (V

= 0)

GE

Gate-Emitter Leakage Current (V

CE

= 0)

= Max Rating Tj = 25 oC

V

CE

V

= Max Rating Tj = 125 oC

CE

= ± 20 V VCE = 0 ± 100 nA

V

GE

250

2000

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GE(th)

Gate Threshold

V

= VGE IC = 250 µA35V

CE

Voltage

V

CE(SAT)

Collector-Emitter Saturation Voltage

VGE = 15 V IC = 7 A V

= 15 V IC = 7 A Tj = 125 oC

GE

2.3

1.9

2.8 V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

Forward

fs

Transconductance

C

Input Capacitance

ies

Output Capacitance

oes

Reverse Transfer

res

Capacitance

Q Q Q

I

CL

Total Gate Charge

G

Gate-Emitter Charge

GE

Gate-Collector Charge

GC

Latching Current V

VCE =25 V IC = 7 A 3.5 5 S

V

= 25 V f = 1 MHz V

CE

= 0 390

GE

45 10

560

68 15

VCE = 480 V IC = 7 A VGE = 15 V 42

730

90 20

55 nC

7.9

17.6

= 480 V RG=10Ω

clamp

T

= 150 oC

j

28 A

µA µA

V

pF pF pF

nC nC

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

15 48

160 185

(di/dt)

2/8

t

d(on)

t

r

Eon(❍)

Delay Time Rise Time

Turn-on Current Slope

on

Turn-on Switching Losses

VCC = 480 V IC = 7 A V

= 15 V RG = 10Ω

GE

V

= 480 V IC = 7 A

CC

R

= 10 Ω VGE = 15 V

G

T

= 125 oC

j

ns ns

A/µs

µJ

STGB7NB60HD

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Cross-Over Time

c

Off Voltage Rise Time

)

off

Delay Time Fall Time

t

f

Turn-off Switching Loss

(**)

Total Switching Loss

(❍)

Cross-Over Time

c

Off Voltage Rise Time

)

off

Delay Time Fall Time

t

f

Turn-off Switching Loss

(**)

Total Switching Loss

(❍)

tr(v t

E

tr(v t

E

(off)

d

off

ts

(off)

d

off

ts

t

COLLECTOR-EMITTER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

Forward Current

f

I

V

t

Q

I

rrm

(•) Pulse width limited by max. junction temperature

) Include recovery losses on the STTA506 freewheeling diode

(

❍

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardi zat io n)

Forward Current pulsed

fm

Forward On-Voltage If = 7 A

f

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

Reverse Recovery Current

VCC = 480 V I R

= 10 Ω VGE = 15 V

GE

VCC = 480 V I R

= 10 Ω VGE = 15 V

GE

T

= 125 oC

j

I

= 7 A Tj = 125 oC

f

If = 7 A VR=200 V dI/dt = 100 A/µS T

= 7 A

C

= 7 A

C

= 125 oC

j

85 20 75 70 85

235 150

50 110 110 220 405

1.6

1.4

100 180

3.6

7

56

2.0 V

µ µ

ns ns ns ns

J J

ns ns ns ns

J J

A A

V

ns

nC

A

Thermal Impedance

3/8