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STGB7NB60HD
User Manual
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ST STGB7NB60HD User Manual

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®
N-CHANNEL 7A - 600V DPAK
TYPE V
STGB7NB60HD 600 V < 2.8 V 7 A
■
HIGH INPUT IMPEDANCE
CES
(VOLTAGE DRIVEN)
■
LOW ON-VOLTAGE DROP (V
■
LOW GATE CHARGE
■
HIGH CURRENT CAPABILITY
■
VERY HIGH FREQUENCY OPERATION
■
OFF LOSSES INCLUDE TAIL CURRENT
■
CO-PACKAGED WITH TURBOSWITCH ANTIPARALLEL DIODE
■
SURFACE-MOU NTING D2PAK (TO-263) POWER PACKAGE IN TA PE & REEL (SUFFIX "T4")
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).
V
CE(sat)
I
C
)
STGB7NB60HD
PowerMESH IGBT
3
1
D2PAK
TO-263
(Suffix "T 4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH FREQUENCY MOTOR CONTROLS
■
SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
I
CM
P
T
(•) Pulse width limited by safe operating area
June 1999
Collector-Emitter Voltage (VGS = 0) 600 V
CES
Gate-Emitter Voltage ± 20 V
GE
I
Collector Current (continuous) at Tc = 25 oC14A
C
I
Collector Current (continuous) at Tc = 100 oC7A
C
(•) Collector Current (pulsed) 56 A
Total Dissipation at Tc = 25 oC80W
tot
Derating Factor 0.64 W/ Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
o
C
1/8
STGB7NB60HD
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ
1.56
62.5
0.5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
j
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter
IC = 250 µA V
= 0 600 V
GE
Breakdown Voltage
I
I
CES
GES
Collector cut-off (V
= 0)
GE
Gate-Emitter Leakage Current (V
CE
= 0)
= Max Rating Tj = 25 oC
V
CE
V
= Max Rating Tj = 125 oC
CE
= ± 20 V VCE = 0 ± 100 nA
V
GE
250
2000
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
Gate Threshold
V
= VGE IC = 250 µA35V
CE
Voltage
V
CE(SAT)
Collector-Emitter Saturation Voltage
VGE = 15 V IC = 7 A V
= 15 V IC = 7 A Tj = 125 oC
GE
2.3
1.9
2.8 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
Forward
fs
Transconductance
C
C
C
Input Capacitance
ies
Output Capacitance
oes
Reverse Transfer
res
Capacitance
Q Q Q
I
CL
Total Gate Charge
G
Gate-Emitter Charge
GE
Gate-Collector Charge
GC
Latching Current V
VCE =25 V IC = 7 A 3.5 5 S
V
= 25 V f = 1 MHz V
CE
= 0 390
GE
45 10
560
68 15
VCE = 480 V IC = 7 A VGE = 15 V 42
730
90 20
55 nC
7.9
17.6
= 480 V RG=10Ω
clamp
T
= 150 oC
j
28 A
µA µA
V
pF pF pF
nC nC
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
15 48
160 185
(di/dt)
2/8
t
d(on)
t
r
Eon(❍)
Delay Time Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
VCC = 480 V IC = 7 A V
= 15 V RG = 10Ω
GE
V
= 480 V IC = 7 A
CC
R
= 10 Ω VGE = 15 V
G
T
= 125 oC
j
ns ns
A/µs
µJ
STGB7NB60HD
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Cross-Over Time
c
Off Voltage Rise Time
)
off
Delay Time Fall Time
t
f
Turn-off Switching Loss
(**)
Total Switching Loss
(❍)
Cross-Over Time
c
Off Voltage Rise Time
)
off
Delay Time Fall Time
t
f
Turn-off Switching Loss
(**)
Total Switching Loss
(❍)
tr(v t
E
E
tr(v t
E
E
(off)
d
off
ts
(off)
d
off
ts
t
t
COLLECTOR-EMITTER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
Forward Current
f
I
V
t
Q
I
rrm
(•) Pulse width limited by max. junction temperature
) Include recovery losses on the STTA506 freewheeling diode
(
❍
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardi zat io n)
Forward Current pulsed
fm
Forward On-Voltage If = 7 A
f
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
Reverse Recovery Current
VCC = 480 V I R
= 10 Ω VGE = 15 V
GE
VCC = 480 V I R
= 10 Ω VGE = 15 V
GE
T
= 125 oC
j
I
= 7 A Tj = 125 oC
f
If = 7 A VR=200 V dI/dt = 100 A/µS T
= 7 A
C
= 7 A
C
= 125 oC
j
85 20 75 70 85
235 150
50 110 110 220 405
1.6
1.4
100 180
3.6
7
56
2.0 V
µ µ
µ µ
ns ns ns ns
J J
ns ns ns ns
J J
A A
V
ns
nC
A
Thermal Impedance
3/8
STGB7NB60HD
Output Characteristics
Transconductance
Transfer Characteristics
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
4/8
Gate Threshold vs Temperature
STGB7NB60HD
Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltage
Capacitance Variations
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
5/8
STGB7NB60HD
Switching Off Safe Operating Area Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 3: Switching Waveforms
Fig. 2: Test Circuit For Inductive Load Switching
6/8
TO-263 (D2PAK) MECHANICAL DATA
STGB7NB60HD
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053
D 8.95 9.35 0.352 0.368 E 10 10.4 0.393 0.409 G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068
mm inch
D
A
C2
DETAIL "A"
C
A2
DETAIL "A"
A1
B2
E
L2
L
L3
B
G
P011P6/E
7/8
STGB7NB60HD
Information f urnished i s believed t o be accurate an d reliabl e. How ever, STMicroelect ronics assu mes no responsib ility fo r the consequen ces of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to chan ge w ithout notice. This publicatio n su persedes a nd r eplaces al l inf ormati on previ ously suppl ied. STMicroelect ron ics produ cts are not auth ori zed f or use as critical component s in life support devices or systems without exp r ess writt e n ap proval o f STM i cr oel ectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectroni cs – Printed i n It aly – All Rights Reserved
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