ST STGP7NB60FD, STGB7NB60FD User Manual
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STGP7NB60FD - STGB7NB60FD
N-CHANNEL 7A - 600V TO-220 / D2PAK
PowerMESH™ IGBT
TYPE V
CES
V
CE(sat) (Max)
@25°C
STGP7NB60FD
STGB7NB60FD
■ HIGH INPUT IMPEDANCE
■ LOW ON-VOLTAGE DROP (V
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ HIGH FREQUENCY OPERATION
■ CO-PACK AGED WITH TURBOSWITCH™
600 V
600 V
<2.4 V
<2.4 V
cesat
)
I
C
@100°C
7A
7A
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, wit h outstanding perfomances .
The suffix " F" identifies a family optimized to
achieve very low switching switching times for high
frequency applications (<40KHZ)
3
1
TO-220
3
2
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ MOTOR CONTROLS
■ SMPS AND PFC AND BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STGP7NB60FD GP7NB60FD TO-220 TUBE
STGB7NB60FDT4 GB7NB60FD
2
PAK
D
TAPE & REEL
1/11June 2003
STGP7NB60FD - ST GB 7N B6 0FD
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
GE
I
I
I
CM
P
TOT
T
stg
T
() Pulse width limited by safe operating area
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1.56 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Collector-Emitter Voltage (VGS=0)
600 V
Gate-Emitter Voltage ±20 V
Collector Current (continuous) at TC= 25°C
C
Collector Current (continuous) at TC= 100°C
C
()
Collector Current (pulsed) 56 A
Total Dissipation at TC= 25°C
14 A
7A
80 W
Derating Factor 0.64 W/°C
Storage Temperature – 55 to 150 °C
Max. Operating Junction Temperature 150 °C
j
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS O THERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown
IC= 250 µA, VGE=0 600 V
Voltage
I
CES
I
GES
Collector cut-off
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
V
= Max Rating, TC=25°C
CE
= Max Rating, TC= 125 °C
V
CE
V
=±20V,VCE= 0 ±100 nA
GE
50 µA
100 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
V
CE=VGE,IC
VGE=15V,IC=7A
VGE=15V,IC=7A,Tj=125°C
= 250 µA
35V
2.0 2.4 V
1.6 V
2/11
STGP7NB60FD - ST GB 7N B60FD
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
oes
C
res
Forward Transconductance
Input Capacitance
ies
Output Capacitance 80 pF
Reverse Transfer
Capacitance
Q
Q
Q
I
CL
Total Gate Charge
g
Gate-Emitter Charge
ge
Gate-Collector Charge
gc
Latching Current V
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
Eon
Turn-on Delay Time
Rise Time
r
Turn-on Current Slope
on
Turn-on Switching Losses
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff
t
d(off
E
tr(V
td(
E
t
t
off
E
t
t
off
E
Cross-over Time
c
)
Off Voltage Rise Time 45 ns
)
Delay Time 107 ns
Fall Time 140 ns
f
(**)
Turn-off Switching Loss 240
Total Switching Loss 300
ts
Cross-over Time
c
)
Off Voltage Rise Time 195 ns
off
)
Delay Time 204 ns
off
Fall Time 650 ns
f
(**)
Turn-off Switching Loss 565
Total Switching Loss 625
ts
VCE=25V,Ic=7A
V
=25V,f=1MHz,VGE=0
CE
=480V,IC=7A,
V
CE
VGE= 15V
= 480 V
clamp
Tj = 125°C , R
= 480 V, IC=7ARG=10Ω,
V
CC
=10Ω
G
VGE=15V
= 480 V, IC=7ARG=10Ω
V
CC
V
= 15 V,Tj =125°C
GE
V
= 480 V, IC=7A,
cc
R
=10Ω,VGE=15V
G
V
= 480 V, IC=7A,
cc
R
=10Ω,VGE=15V
G
Tj = 125 °C
6S
540 pF
13 pF
37
50
4
18
28 A
17
6
890
59
190 ns
410 ns
nC
nC
nC
ns
ns
A/µs
µJ
µJ
µJ
µJ
µJ
COLLECTOR-EMITTER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
f
I
fm
V
t
rr
Q
I
rrm
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction t emperature.
(**)Losses include Also the Tail (Jedec Standardization)
Forward Current
Forward Current pulsed
Forward On-Voltage If= 3.5 A
f
Reverse Recovery Time
Reverse Recovery Charge
rr
Reverse Recovery Current
= 3.5 A, Tj = 125 °C
I
f
=7A,VR=40V,
I
f
Tj =125°C, di/dt = 100 A/µs
1.4
1.1
50
70
2.7
7
56
1.9
A
A
V
V
ns
nC
A
3/11
STGP7NB60FD - ST GB 7N B6 0FD
Output Characteristics
Transfer Characteri stics
Normalized Collector-Emitter On Voltage vs Temp.Transconductance
Collector-Emitter On V oltage vs Collector Current
4/11
Gate Thresho ld vs Temperature
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