ST STGB6NC60HD, STGB6NC60HD-1, STGF6NC60HD, STGP6NC60HD User Manual

3

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N-channel 600V - 7A - I2PAK / D2PAK / TO-220 / TO-220FP

Features

V

Type V

STGB6NC60HD

STGB6NC60HD-1

STGP6NC60HD STGF6NC60HD

CES

600V 600V 600V 600V

CE(sat)

STGB6NC60HD - STGB6NC60HD-1

STGF6NC60HD - STGP6NC60HD

Very fast PowerMESH™ IGBT

max

@25°C

<2.5V <2.5V <2.5V <2.5V

I

C

@100°C

7A 7A 7A 3A

3

2

1

TO-220FPTO-220

2

1

■ Low on voltage drop (V

■ Low C

RES

/ C

ratio (no cross-conduction

IES

cesat

)

susceptibility)

■ Very soft ultra fast recovery antiparallel diode

■ High frequency operation

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “H” identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

Applications

■ High frequency inverters

■ SMPS and PFC in both hard switch and

resonant topologies

■ Motor drivers

3

1

D²PAK

I2PAK

Internal schematic diagram

3

2

1

Order codes

Part number Marking Package Packaging

STGB6NC60HDT4 GB6NC60HD D²PAK Tape & reel

STGB6NC60HD-1 GB6NC60HD I²PAK Tube

STGP6NC60HD GP6NC60HD TO-220 Tube

STGF6NC60HD GF6NC60HD TO-220FP Tube

April 2007 Rev 4 1/18

www.st.com

18

Contents STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

2/18

STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Value

Symbol Parameter

D²PAK/I²PAK/

TO-220

TO-220FP

Unit

V

CES

I

C

I

C

I

CM

V

I

P

TOT

V

ISO

T

1. Calculated according to the iterative formula::

2. Pulse width limited by max junction temperature

Collector-emitter voltage (VGS = 0)

(1)

Collector current (continuous) at TC = 25°C

(1)

Collector current (continuous) at TC = 100°C

(2)

Collector current (pulsed) 21 A

Gate-emitter voltage ±20 V

GE

Diode RMS forward current at Tc=25°C 10 A

F

Total dissipation at TC = 25°C

Insulation withstand voltage A.C.(t=1sec;Tc=25°C) -- 2500

Storage temperature

stg

Operating junction temperature

j

Maximum lead temperature for soldering purpose

l

(for 10sec. 1.6 mm from case)

ICTC()

---------------------------------- --------------------------------------------- -----------------------=

R

THJ C–VCESAT MAX()TCIC

T

JMAXTC

600 V

15 6 A

73A

56 20 W

– 55 to 150 °C

300 °C

–

,()×

Table 2. Thermal resistance

Symbol Parameter Value Unit

TO-220

Rthj-case Thermal resistance junction-case max

D²PAK

I²PAK

TO-220FP 5°C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W

2°C/W

3/18

Electrical characteristics STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 3. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

BR(CES)

V

CE(sat)

V

GE(th)

I

CES

I

GES

g

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Gate threshold voltage

Collector cut-off current

= 0)

(V

GE

Gate-emitter leakage current (V

Forward transconductance

fs

CE

= 0)

= 1mA, V

I

C

V

= 15V, IC= 3A

GE

V

= 15V, IC= 3A, Tc= 125°C

GE

= VGE, IC= 250 µA

V

CE

= Max rating,TC= 25°C

V

CE

= Max rating,TC= 125°C

V

CE

V

= ±20V , VCE= 0

GE

= 15V, IC= 3A

V

CE

GE

= 0

600 V

1.9

2.5 V

1.7

3.75 5.75 V

101µA

±100 nA

3S

Table 4. Dynamic

Symbol Parameter Test conditions Min. T yp. Max. Unit

C

Input capacitance

ies

Output capacitance

oes

Reverse transfer

res

capacitance

= 25V, f = 1MHz,

V

CE

= 0

V

GE

205

32

5.5

V

mA

pF pF pF

Q

g

Total gate charge

Q

I

Gate-emitter charge

ge

Gate-collector charge

gc

Turn-off SOA minimum

CL

current

VCE = 390V, IC = 3A,

V

(see Figure 18)

V R

4/18

= 15V,

GE

= 390V, Tj = 150°C,

clamp

= 10Ω, V

G

GE

= 15V

13.6

3.4

5.1

19 A

nC nC nC

STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD Electrical characteristics

Table 5. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

(di/dt)

t

d(on)

t

(di/dt)

t

r(Voff

t

d(off

t

r(Voff

t

d(off

t

Turn-on delay time Current rise time

r

Turn-on current slope

on

Turn-on delay time Current rise time

r

Turn-on current slope

on

)

Off voltage rise time

)

Turn-off delay time Current fall time

f

)

Off voltage rise time

)

Turn-off delay time Current fall time

f

= 390V, IC = 3A

V

CC

= 10Ω, V

R

G

GE

= 15V,

Tj = 25°C (see Figure 19)

= 390V, IC = 3A

V

CC

= 10Ω, V

R

G

GE

= 15V,

Tj =125°C (see Figure 19)

VCC = 390V, IC = 3A,

R

= 10Ω , V

GE

= 25°C (see Figure 19)

T

J

= 390V, IC = 3A,

V

CC

R

= 10Ω , VGE =15V,

GE

= 15V,

Tj = 125°C (see Figure 19)

12

5

612

13

4.3

560

40 76

100

60 98

124

A/µs

Table 6. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

E

on

E

off

E

on

E

off

E

1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 17. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)

2. Turn-off losses include also the tail of the collector current

Turn-on switching losses

(2)

Turn-off switching losses Total switching losses

ts

(1)

Turn-on switching losses

(2)

Turn-off switching losses Total switching losses

ts

VCC = 390V, IC = 3A

=10Ω, VGE=15V,

R

G

Tj =25°C (see Figure 19)

= 390V, IC = 3A

V

CC

R

G

=10Ω, V

GE

= 15V,

Tj = 125°C (see Figure 19)

20 68 88

37 93

130

ns ns

ns ns ns

µJ µJ µJ

5/18

Electrical characteristics STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD

Table 7. Collector-emitter diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

Q

I

Q

I

V

t

rr

rrm

t

rr

rrm

Forward on-voltage

f

Reverse recovery time Reverse recovery charge

rr

Reverse recovery current

Reverse recovery time Reverse recovery charge

rr

Reverse recovery current

= 1.5A

f

= 1.5A, Tj = 125°C

I

f

= 3A ,VR = 40V,

I

f

Tj = 25°C, di/dt = 100 A/µs

(see Figure 20)

= 3A ,VR = 40V,

I

f

Tj =125°C, di/dt = 100A/µs

(see Figure 20)

1.6

1.3

21 14

1.36

34 32

1.88

2.1 V V

ns

nC

A

ns

nC

A

6/18