查询GB3NB60KD供应商
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
STGP3NB60K - STGD3NB60K
N-CHANNEL 3A - 600V - TO-220/DPAK/D
PowerMESH™ IGBT
2
PAK
TYPE
STGP3NB60K
STGD3NB60K
STGP3NB60KD
STGP3NB60KDFP
STGB3NB60KD
■ HIGH INPUT IMPEDANCE ( VO L TAG E DRIVEN)
■ LOW ON-VOLTAGE DROP (V
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ HIGH FREQUENCY OPERATION
■ SHORT CIRCUIT RATED
V
CES
600 V
600 V
600 V
600 V
600 V
V
CE(sat)
(Typ) @125°C
< 2 V
< 2 V
< 2 V
< 2 V
< 2 V
)
cesat
I
C
@125°C
3 A
3 A
3 A
3 A
3 A
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control app lications with short circuit withstand capability.
3
2
TO-220
2
PAK
D
1
3
1
TO-220FP
DPAK
INTERNAL SCHEMATIC DIAGRAM
3
2
1
3
1
Std. Version “D” Version
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCHING
AND RESONANT TOPOLOG IES
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STGP3NB60K GP3NB60K TO-220 TUBE
STGD3NB60KT4 GD3NB60K DPAK TAPE & REEL
STGP3NB60KD GP3NB60KD TO-220 TUBE
STGP3NB60KDFP GP3NB60KDFP TO-220FP TUBE
STGB3NB60KDT4
GB3NB60KD
2
PAK
D
TAPE & REEL
1/14May 2002
STGP3NB60K/STGD3NB60K/ST GP3NB60KD/STGP3NB60K D FP/S TG B 3NB60K D
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
I
I
I
CM
If (1)
I
fm
P
TOT
Collector-Emitter Voltage (VGS = 0)
Emitter-Collector Voltage 20 V
Gate-Emitter Voltage ±20 V
GE
Collector Current (continuos) at TC = 25°C
C
Collector Current (continuos) at TC = 100°C
C
(n)
Collector Current (pulsed) 24 24 24 A
Forward Current 3 A
(1)
Forward Current Pulsed 24 A
Total Dissipation at TC = 25°C
Derating Factor 0.75 W/°C
V
T
(n) Puls e width limited by safe operating area
(1) For “D” version only
ISO
stg
T
Insulation Withstand Voltage A.C. -- 2500 -- V
Storage Temperature
Max. Operating Junction Temperature
j
TO-220
2
PAK
D
666A
333A
68 25 60 W
TO-220FP DPAK
600 V
– 55 to 150
150
°C
THERMA L D ATA
TO-220
2
D
PAK
Rthj-case Thermal Resistance Junction-case Max 1.8 5 2.1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
Rthc-h Thermal Resistance Case-heatsink Typ 0.5 °C/W
TO-220FP DPAK
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
MAIN PARAMETE RS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
CES
I
GES
Collector cut-off
(V
GE
Gate-Emitter Leakage
Current (V
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
= 0)
CE
= 0)
IC = 250 µA, VGE = 0 600 V
V
= Max Rating, TC = 25 °C
CE
VCE = Max Rating, TC = 125 °C
V
= ±20V , VCE = 0 ±100 nA
GE
V
= VGE, IC = 250µA
CE
VGE = 15V, IC = 3 A
VGE = 15V, IC = 3 A, Tj =125°C
57V
2.3
1.9
50
500
2.8 V
µA
µA
V
2/14
STGP3NB60K/STGD3N B 60K/S TG P3N B60KD/STGP3NB60KDFP/ST GB 3N B60KD
SWITCHI N G PARAMETERS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
tscw Short Circuit Withstand Time V
t
d(on)
t
(di/dt)
Eon
t
c
tr(V
td(
off
t
E
off
E
t
c
tr(V
td(
off
t
E
off
E
r
off
f
(**)
ts
off
f
(**)
ts
Turn-on Delay Time
Rise Time
Turn-on Current Slope
on
Turn-on Switching Losses
Cross-over Time
Off Voltage Rise Time
)
Delay Time
)
Fall Time
Turn-off Switching Loss
Total Switching Loss
Cross-over Time
Off Voltage Rise Time
)
Delay Time
)
Fall Time
Turn-off Switching Loss
Total Switching Loss
= 25V, Ic = 3 A
CE
= 25V, f = 1 MHz, VGE = 0 218
V
CE
= 480V, IC = 3 A,
V
CE
VGE = 15V
= 0.5 V
ce
BR(CES)
, VGE=15V,
10 µs
Tj = 125°C , RG = 10 Ω
VCC = 480 V, IC = 3 A
RG=10Ω, VGE = 15 V
= 480 V, IC = 3 A RG=10Ω
V
CC
VGE = 15 V,Tj = 125°C
= 480 V, IC = 3 A,
V
cc
R
= 10 Ω , VGE = 15 V
GE
Tj = 25 °C
= 480 V, IC = 3 A,
V
cc
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
2.4 S
33
5.8
14
18 nC
3.3
7.5
14
5
520
30
122
26.5
33
100
58
85
210
66
100
120
165
195
pF
pF
pF
nC
nC
ns
ns
A/µs
µJ
ns
ns
ns
ns
µJ
µJ
ns
ns
ns
ns
µJ
µJ
COLLECTOR-EMITTER DIODE (“D” VERSION)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
Forward On-Voltage If = 1.5 A
f
If = 1.5 A, Tj = 125 °C
t
rr
Q
rr
I
rrm
Note: 1. Pulsed: Pulse dura tion = 300 µs, duty cycle 1. 5 %.
2. Pulse wi dt h l i mited by max. j unction temperature .
(**)Losses in clude Also th e T ai l (Jedec Standardization)
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 3 A ,VR = 35 V,
I
f
Tj =125°C, di/dt = 100A/µs
1.31
0.95
45
70
2.7
1.8
V
V
ns
nC
A
3/14
STGP3NB60K/STGD3NB60K/ST GP3NB60KD/STGP3NB60K D FP/S TG B 3NB60K D
Output Characteristics
Transconductance
Transfer Characteristics
Normalized Collector-Emitter On Voltage vs Temp.
Collector-Emitter On Voltage vs Collector Current
4/14
Gate Threshold vs Temperature
STGP3NB60K/STGD3N B 60K/S TG P3N B60KD/STGP3NB60KDFP/ST GB 3N B60KD
Normalized Breakdown Volta ge vs Temperature
Gate Charge vs Gate-Emitter Voltage
Capacitance Variations
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature Emitter-collector Diode Characteristics
5/14
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