ST STGP3NB60K, STGD3NB60K, STGP3NB60KD, STGP3NB60KDFP, STGB3NB60KD User Manual

GB3NB60KD

STGP3NB60K - STGD3NB60K

STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD

N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK

PowerMESH™ IGBT

TYPE	VCES	VCE(sat)	IC
		(Typ) @125°C	@125°C
STGP3NB60K	600 V	< 2 V	3 A
STGD3NB60K	600 V	< 2 V	3 A
STGP3NB60KD	600 V	< 2 V	3 A
STGP3NB60KDFP	600 V	< 2 V	3 A
STGB3NB60KD	600 V	< 2 V	3 A

■HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

■LOW ON-VOLTAGE DROP (Vcesat)

■LOW GATE CHARGE

■HIGH CURRENT CAPABILITY

■OFF LOSSES INCLUDE TAIL CURRENT

■HIGH FREQUENCY OPERATION

■SHORT CIRCUIT RATED

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability.

APPLICATIONS

■HIGH FREQUENCY MOTOR CONTROLS

■SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES

		3	3
	2		2
1			1

TO-220	TO-220FP
	3
3	1
1	DPAK
D2PAK

INTERNAL SCHEMATIC DIAGRAM

Std. Version

“D” Version

ORDERING INFORMATION

SALES TYPE	MARKING	PACKAGE	PACKAGING
STGP3NB60K	GP3NB60K	TO-220	TUBE
STGD3NB60KT4	GD3NB60K	DPAK	TAPE & REEL
STGP3NB60KD	GP3NB60KD	TO-220	TUBE
STGP3NB60KDFP	GP3NB60KDFP	TO-220FP	TUBE
STGB3NB60KDT4	GB3NB60KD	D2PAK	TAPE & REEL

May 2002

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ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter			Value		Unit
		TO-220		TO-220FP	DPAK
		D2PAK
VCES	Collector-Emitter Voltage (VGS = 0)		600			V
VECR	Emitter-Collector Voltage		20			V
VGE	Gate-Emitter Voltage		±20			V
IC	Collector Current (continuos) at TC = 25°C	6		6	6	A
IC	Collector Current (continuos) at TC = 100°C	3		3	3	A
ICM (n)	Collector Current (pulsed)	24		24	24	A
If (1)	Forward Current		3			A
Ifm (1)	Forward Current Pulsed		24			A
PTOT	Total Dissipation at TC = 25°C	68		25	60	W
	Derating Factor		0.75			W/°C
VISO	Insulation Withstand Voltage A.C.	--		2500	--	V
Tstg	Storage Temperature		– 55 to 150			°C
Tj	Max. Operating Junction Temperature		150

(n) Pulse width limited by safe operating area

(1) For “D” version only

THERMAL DATA

			TO-220		TO-220FP	DPAK
			D2PAK
Rthj-case	Thermal Resistance Junction-case Max		1.8		5	2.1	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max			62.5		100	°C/W
Rthc-h	Thermal Resistance Case-heatsink Typ			0.5			°C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) MAIN PARAMETERS

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VBR(CES)	Collector-Emitter Breakdown	IC = 250 µA, VGE = 0	600			V
	Voltage
ICES	Collector cut-off	VCE = Max Rating, TC = 25 °C			50	µA
	(VGE = 0)	VCE = Max Rating, TC = 125 °C			500	µA
IGES	Gate-Emitter Leakage	VGE = ±20V , VCE = 0			±100	nA
	Current (VCE = 0)
VGE(th)	Gate Threshold Voltage	VCE = VGE, IC = 250µA	5		7	V
VCE(sat)	Collector-Emitter Saturation	VGE = 15V, IC = 3 A		2.3	2.8	V
	Voltage	VGE = 15V, IC = 3 A, Tj =125°C		1.9		V

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SWITCHING PARAMETERS

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs	Forward Transconductance	VCE = 25V, Ic = 3 A		2.4		S
Cies	Input Capacitance	VCE = 25V, f = 1 MHz, VGE = 0		218		pF
Coes	Output Capacitance			33		pF
Cres	Reverse Transfer			5.8		pF
	Capacitance
Qg	Total Gate Charge	VCE = 480V, IC = 3 A,		14	18	nC
Qge	Gate-Emitter Charge	VGE = 15V		3.3		nC
Qgc	Gate-Collector Charge			7.5		nC
tscw	Short Circuit Withstand Time	Vce = 0.5 VBR(CES), VGE=15V,	10			µs
		Tj = 125°C , R G = 10 Ω
td(on)	Turn-on Delay Time	VCC = 480 V, IC = 3 A		14		ns
tr	Rise Time	RG = 10Ω, VGE = 15 V		5		ns
(di/dt)on	Turn-on Current Slope	VCC= 480 V, IC = 3 A RG=10Ω		520		A/µs
Eon	Turn-on Switching Losses	VGE = 15 V,Tj = 125°C		30		μJ
tc	Cross-over Time	Vcc = 480 V, IC = 3 A,		122		ns
tr(Voff)	Off Voltage Rise Time	RGE = 10 Ω , VGE = 15 V		26.5		ns
td(off)	Delay Time	Tj = 25 °C		33		ns
tf	Fall Time			100		ns
Eoff(**)	Turn-off Switching Loss			58		μJ
Ets	Total Switching Loss			85		μJ
tc	Cross-over Time	Vcc = 480 V, IC = 3 A,		210		ns
tr(Voff)	Off Voltage Rise Time	RGE = 10 Ω , VGE = 15 V		66		ns
td(off)	Delay Time	Tj = 125 °C		100		ns
tf	Fall Time			120		ns
Eoff(**)	Turn-off Switching Loss			165		μJ
Ets	Total Switching Loss			195		μJ
COLLECTOR-EMITTER DIODE (“D” VERSION)
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
Vf	Forward On-Voltage	If = 1.5 A		1.31	1.8	V
		If = 1.5 A, Tj = 125 °C		0.95		V
trr	Reverse Recovery Time	If = 3 A ,VR = 35 V,		45		ns
Qrr	Reverse Recovery Charge	Tj =125°C, di/dt = 100A/ μs		70		nC
Irrm	Reverse Recovery Current			2.7		A

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization)

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Output Characteristics		Transfer Characteristics

Transconductance	Normalized Collector-Emitter On Voltage vs Temp.
Collector-Emitter On Voltage vs Collector Current	Gate Threshold vs Temperature

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Normalized Breakdown Voltage vs Temperature

Capacitance Variations

Gate Charge vs Gate-Emitter Voltage

Total Switching Losses vs Gate Resistance

Total Switching Losses vs Temperature

Emitter-collector Diode Characteristics

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